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IS43LR16800G-6BLI-TR

Integrated Silicon Solution

IS43LR16800G-6BLI-TR by Integrated Silicon Solution

IS43LR16800G-6BLI-TR by Integrated Silicon Solution is an 8MX16 DDR1 DRAM with a memory density of 134217728 bits. It operates synchronously at a max temperature of 85°C and has a self-refresh mode. This thin-profile, fine-pitch package is ideal for industrial applications requiring fast access times and low power consumption.

Median Price

$4.020

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

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$4.020

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100

$4.020

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Vyrian

USA . 1,344 parts In-Stock

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1,344

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 4,327 parts In-Stock

1+ parts

$4.020

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$4.020

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Continental Prestige Electronics

USA . 3,440 parts In-Stock

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$4.020

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$3.940

3,440

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$3.940

Netroflash

USA . 500 parts In-Stock

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$4.020

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$3.940

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500

$4.020

$3.940

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QUARKTWIN TECHNOLOGY LTD

USA . 27,815 parts In-Stock

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Authorized Procurement Solutions

USA . 26,000 parts In-Stock

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26,000

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GreenTree Electronics

Israel . 26,000 parts In-Stock

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Perfect Parts

USA . 1,346 parts In-Stock

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Overview

Discover the superior performance and reliability of the IS43LR16800G-6BLI-TR from Integrated Silicon Solution. As a leading manufacturer in the industry, ISS is known for producing top-quality DRAM products that excel in a wide range of applications. With its synchronous operation, self-refresh capabilities, and industrial-grade temperature tolerance, this DDR1 DRAM offers unparalleled value and benefits to customers. Upgrade your system with the IS43LR16800G-6BLI-TR and experience faster speeds, increased efficiency, and enhanced overall performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the DRAM, ensuring a longer lifespan.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a fixed, predictable rate, increasing overall performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a lower voltage helps reduce power consumption and heat generation, making the product more energy efficient.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

This package style allows for high-density mounting and efficient use of space in electronic devices.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial environments, ensuring reliability and stability in extreme temperature conditions.

Memory IC Type: DDR1 DRAM

DDR1 technology offers fast data transfer rates and low power consumption, making it suitable for a wide range of applications.

Technical Specifications

DRAM IS43LR16800G-6BLI-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.5 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B60

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

60

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.1 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8 mm

Trade Compliance

IS43LR16800G-6BLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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