Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Micron Technology's MT46V32M16P-5BAIT:J is a DDR1 DRAM with 32MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access times in a compact small outline package.
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Vyrian
Digiode
ComSIT Distribution GmbH
ComSIT USA
Nova Conductors
Andel Nordic
$2.740
$2.631
Corohmni
$3.883
AZTECH Wire
$7.316
Ampacity Inc.
$20.000
Microchip USA
Authorized Procurement Solutions
Continental Prestige Electronics
Corphita
Argo Parts USA
Aranea Global
The plastic/epoxy material of the package body provides durability and protection for the DRAM, making it a reliable choice.
The ability to be surface mounted allows for easy installation and integration into various electronic devices.
The rectangular package shape helps in saving space and allows for efficient placement within circuits.
The synchronous operating mode ensures accurate and synchronized data transfers, enhancing overall performance.
The self-refresh feature helps in maintaining data integrity during power outages or fluctuations, making it a dependable option.
The nominal supply voltage of 2.6V offers efficient power consumption while maintaining optimal performance levels.
With 66 terminals, the DRAM facilitates seamless connectivity and communication within electronic systems.
This package style combines a compact design with a reduced profile, ideal for space-constrained applications.
The high maximum operating temperature of 85°C ensures stable performance even in demanding environments.
The 32MX16 organization provides a high memory capacity and efficient data storage capabilities.
The low minimum operating temperature of -40°C allows for reliable operation in extreme conditions.
The matte tin terminal finish offers good conductivity and corrosion resistance, ensuring long-term reliability.
The dual terminal position enhances connectivity options and simplifies installation processes.
The maximum seated height of 1.2mm allows for a compact and space-efficient PCB design.
With a width of 10.16mm, the DRAM is suitable for applications requiring a slim form factor.
The low minimum supply voltage of 2.5V helps in reducing power consumption, making it energy-efficient.
The length of 22.22mm provides a balanced form factor for easy integration into various electronic devices.
The industrial-grade temperature rating ensures reliable performance in harsh industrial environments.
The four-bank page burst access mode allows for rapid data retrieval and efficient memory access.
The CMOS technology used in the DRAM ensures low power consumption and high-speed operation.
The gull wing terminal form offers secure solder connections and enhanced mechanical strength.
With a high number of words supported, the DRAM provides ample storage capacity for data-intensive applications.
The 16-bit memory width allows for efficient data processing and storage within the DRAM.
The small terminal pitch of 0.65mm enables high-density packaging and precise PCB layout.
The 32M code signifies the high memory capacity and extensive data storage capabilities of the DRAM.
The maximum supply voltage of 2.7V ensures compatibility with a wide range of electronic systems.
The high memory density of 536870912 bits allows for efficient data storage and retrieval.
The DDR1 DRAM type offers high-speed data transfer rates and enhanced system performance.
The fast maximum access time of 0.7ns enables quick data retrieval and efficient processing.
DRAM MT46V32M16P-5BAIT:J attributes and parameters. Explore more DRAM devices from Micron Technology
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MT46V32M16P-5BAIT:J Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.28
SB
8542.32.00.15
PCN Packaging - Standard Pkg Label Chg 20/Feb/2019
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
2N7002
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;
BAV99+
Multicomp Pro
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
LM358D-T
NXP Semiconductors
LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.
2N2222A
North American Philips Discrete Products Div
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
RC0603FR-0710KL
Yageo
Yageo's RC0603FR-0710KL is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in electronics requiring precise resistance values.
ULN2803ADWRG4
Texas Instruments
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
GRM155R71H103KA88D
Murata Manufacturing
The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.
AT90CAN128-16AU
Microchip Technology
AT90CAN128-16AU by Microchip Technology is a microcontroller with 8-bit data RAM and 16-bit address bus width. It operates at a max clock frequency of 16 MHz, making it suitable for industrial applications requiring low power mode and connectivity options like CAN, SPI, and USART. With 53 I/O lines and 8-channel 10-bit ADCs, this microcontroller offers versatile peripheral support for various embedded systems.
2N7002-T1-E3
Vishay Intertechnology
Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
STM32F401CDY6TR
STMicroelectronics
STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.
LM358N
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LL4148
Continental Device India
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
C0805C104K5RACTU
KEMET Corporation
KEMET C0805C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and reliable performance.
1N4148
Leshan Radio
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;
FDV304P
Onsemi
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
SS14
Goodwork Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1552200168
Molex
WIRE AND CABLE;
MT40A512M16LY-062EIT:E
Micron Technology
Micron Technology's MT40A512M16LY-062EIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with multi-bank page burst access mode.
MT41K128M16JT-107IT:KTR
Micron Technology's MT41K128M16JT-107IT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 934.5 MHz clock frequency. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type.
MT40A512M16JY-083EAIT:B
Micron Technology's MT40A512M16JY-083EAIT:B is a DDR4 DRAM with 512MX16 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.
AS4C8M16SA-6TIN
Alliance Memory
Alliance Memory's AS4C8M16SA-6TIN is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers a fast access time of 5ns and features self-refresh capability. Ideal for industrial applications requiring reliable synchronous memory with small outline package style.
MT53D512M32D2DS-053AIT:D
Micron Technology's MT53D512M32D2DS-053AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 1.8V. It features a max clock frequency of 1869.1 MHz and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics and industrial devices.
AS4C256M16D3LC-12BIN
Alliance Memory's AS4C256M16D3LC-12BIN is a 256MX16 DDR3L DRAM with 800 MHz clock frequency. Operating at 1.35V, it offers 8192 refresh cycles and supports multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
K4T51163QE-ZCE6
Samsung's K4T51163QE-ZCE6 DDR2 DRAM features 32MX16 organization, 333 MHz clock frequency, and 536870912 bit memory density. Ideal for applications requiring high-speed data processing with a max operating temperature of 95°C.
K4H561638H-UCB3
Samsung's K4H561638H-UCB3 DDR1 DRAM features 16MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.
S27KL0642DPBHB020
Infineon Technologies
Infineon's S27KL0642DPBHB020 is a 8MX8 DRAM with 67108864 bit memory density. It operates synchronously at up to 200 MHz, featuring self-refresh and 3-STATE output characteristics. Ideal for automotive applications due to AEC-Q100 screening level and low profile grid array package style.
MT48LC4M32B2P-6AAAT:L
Micron Technology's MT48LC4M32B2P-6AAAT:L is a 4MX32 Synchronous DRAM with 32-bit memory width. Operating at 3.3V, it offers a max access time of 5.4ns and self-refresh capability. Ideal for industrial applications requiring high-speed data processing in a compact form factor.
IS43TR16256BL-125KBL
Integrated Silicon Solution
IS43TR16256BL-125KBL by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH suitable for surface mount applications. With a memory density of 4294967296 bit, it is ideal for multi-bank page burst access in various electronic devices.
K4T1G164QQ-HCE6
Samsung's K4T1G164QQ-HCE6 DDR2 DRAM features 64MX16 organization, 333 MHz clock frequency, and 67108864 words capacity. Ideal for applications requiring high-speed memory access and data processing with a max standby current of 0.015 Amp.
K4D64163HF-TC40
Samsung's K4D64163HF-TC40 is a 4MX16 DDR1 DRAM with 66 terminals, operating at 250 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT61K512M32KPA-16:BTR
Micron Technology's MT61K512M32KPA-16:BTR is a GDDR6 DRAM with 512MX32 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
MT40A1G16KNR-062E:E
Micron Technology's MT40A1G16KNR-062E:E is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous operation, single bank page burst access mode, and a memory width of 16 bits. Suitable for applications requiring high-speed data processing in devices with limited space and power constraints.
MT40A2G8AG-062EAUT:F
Micron Technology's MT40A2G8AG-062EAUT:F is a DDR4 DRAM with 2GX8 organization, operating at a max clock frequency of 1600 MHz. It has a memory density of 17.18 Gb and is suitable for applications requiring high-speed synchronous memory.
MT40A256M16HA-093E:A
Micron Technology's MT40A256M16HA-093E:A is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. This thin-profile memory module has a package style of grid array with fine pitch terminals, suitable for various applications requiring high-speed data processing in compact devices.
MT41K128M16JT-125AUT:K
Micron Technology's MT41K128M16JT-125AUT:K is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level for automotive applications. The package style is grid array with thin profile and fine pitch terminals, suitable for multi-bank page burst access mode.
IS43R16800E-6TLI
IS43R16800E-6TLI by Integrated Silicon Solution is an 8MX16 DDR1 DRAM with 134217728-bit memory density. Operating at 167 MHz, it features a 2.5V supply voltage and supports synchronous mode with self-refresh capability. Ideal for industrial applications requiring high-speed data processing in a compact form factor.
K4S281632K-UC75
Samsung's K4S281632K-UC75 is a 8MX16 DRAM with 133 MHz clock frequency, suitable for commercial applications. Features include 3.3V supply voltage, 70°C operating temperature, and 4096 refresh cycles. Ideal for systems requiring high-speed synchronous memory with low power consumption.
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MT46V32M16P-5B:J
DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT46V32M16P-5BIT:J
Micron Technology's MT46V32M16P-5BIT:J is a DDR1 DRAM with 32MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high-speed memory with a small outline package and thin profile design.
MT46H32M16LFBF-5IT:C
Micron Technology's MT46H32M16LFBF-5IT:C is a 32MX16 DDR1 DRAM with 536870912-bit memory density. It operates at 200 MHz with a supply voltage of 1.8V, suitable for industrial applications requiring fast data access and low power consumption. The package style is grid array, very thin profile, fine pitch, making it ideal for space-constrained designs.
MT46V16M16P-5BIT:MTR
DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH;
MT46H32M16LFBF-5IT:CTR
LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;
MT46H64M16LFBF-5IT:BTR
Micron Technology's MT46H64M16LFBF-5IT:BTR is a DDR1 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and a max access time of 5ns. Ideal for industrial applications requiring high memory density and fast data processing.
MT46V32M16CV-5BIT:J
DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT46V16M16P-5B:M
MT46V16M16P-5BAIT:M
Micron Technology's MT46V16M16P-5BAIT:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT46H16M32LFB5-5IT:C
DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT46H128M16LFDD-48IT:CTR
Micron Technology's MT46H128M16LFDD-48IT:CTR is a 128MX16 LPDDR1 DRAM with 1.8V supply, operating at up to 208MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices like smartphones and tablets.
MT46H32M16LFBF-5AIT:C
LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT46H32M16LFBF-6AAT:C
MT46H64M32LFBQ-48AIT:C
Micron Technology's MT46H64M32LFBQ-48AIT:C is a 64MX32 LPDDR1 DRAM with 67108864 words. It operates at 208 MHz, has a memory width of 32 bits, and supports a max clock frequency of 208 MHz. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT46H64M16LFBF-5IT:B
DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT46V16M16P-5BXIT:M
DDR1 DRAM; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Memory Density: 268435456 bit; No. of Words Code: 16M;
MT46H32M16LFBF-6IT:B
Micron Technology's MT46H32M16LFBF-6IT:B is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features a very thin profile package style and offers 8192 refresh cycles. Ideal for industrial applications requiring fast memory access and low power consumption.
MT46H64M32LFBQ-48IT:C
Micron Technology's MT46H64M32LFBQ-48IT:C is a 64MX32 LPDDR1 DRAM with 67108864 words, operating at 208 MHz. It features a very thin profile, fine pitch grid array package and supports synchronous operation with self-refresh capability. Ideal for industrial applications requiring fast memory access and low power consumption.
MT46H32M16LFBF-6IT:BTR
DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;
MT46H32M16LFBF-6IT:C
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