Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Micron Technology's MT48LC32M16A2P-75:CTR is a 32MX16 DRAM with 33554432 words and 536870912 bit memory density. Operating at 3.3V, it offers synchronous operation, self-refresh capability, and a max access time of 5.4 ns. Ideal for commercial applications requiring fast and reliable memory performance.
Median Price
$9.005
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1+ parts
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Vyrian
Chip Stock
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$2.480
Corohmni
$3.775
AZTECH Wire
$10.098
Andel Nordic
$10.614
$10.190
Ampacity Inc.
$19.000
QUARKTWIN TECHNOLOGY LTD
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Microchip USA
Netroflash
$8.824
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The plastic/epoxy package body material provides durability and protection for the DRAM, ensuring reliable performance and longevity.
Being surface mountable makes the DRAM easy to install and suitable for compact electronic devices.
Synchronous operation allows for faster and more efficient data transfers, enhancing the overall performance of the DRAM.
The 3.3V supply voltage is standard and widely supported, making this DRAM compatible with a variety of systems.
The small outline and thin profile package style helps save space in electronic devices while still offering high memory density.
The 32MX16 organization means the DRAM has a high capacity of 33554432 words, allowing for ample storage and multitasking capabilities.
The use of CMOS technology ensures low power consumption and high speed operation, making this DRAM energy-efficient and responsive.
Synchronous DRAM offers improved performance over asynchronous alternatives, making this memory IC ideal for high-speed computing tasks.
DRAM MT48LC32M16A2P-75:CTR attributes and parameters. Explore more DRAM devices from Micron Technology
Access Mode:
Maximum Access Time:
Additional Features:
JESD-30 Code:
JESD-609 Code:
Length:
Memory Density:
Memory IC Type:
Memory Width:
No. of Functions:
No. of Ports:
No. of Terminals:
No. of Words:
No. of Words Code:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Organization:
Package Body Material:
Package Code:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Qualification:
Maximum Seated Height:
Self Refresh:
Maximum Supply Voltage (Vsup):
Minimum Supply Voltage (Vsup):
Nominal Supply Voltage / Vsup (V):
Surface Mount:
Technology:
Temperature Grade:
Terminal Finish:
Terminal Form:
Terminal Pitch:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Width:
MT48LC32M16A2P-75:CTR Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.28
SB
8542.32.00.15
PCN Part Status Change - AS4C32M16SM 12/Dec/2016
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
2N7002-T1-E3
Vishay Intertechnology
Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
1N4148
Shandong Yiguang Electronic Joint Stock
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
EU2B-YS3103F
Idec
ROTARY SWITCH;
ISO1050DUBR
Texas Instruments
ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.
DS18B20Z
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Housing: PLASTIC; Maximum Accuracy (Cel): 0.50;
LM107H/883
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
SMBJ18CA
Dc Components
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14+
Multicomp Pro
SS14+ by Multicomp Pro is a Schottky rectifier diode with a max output current of 1A and a reverse test voltage of 40V. It is designed for surface mount applications in electronic circuits, offering a small outline package style and dual terminal position. With a temperature range from -65°C to 150°C, it is suitable for various industrial and consumer electronics.
LL4148-GS08
The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.
2N7002
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
2N2222A
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
BAV99
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;
ULN2803A
Onsemi
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
SS14
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
IRLML6402TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
M24308/2-1F
Adi Electronics
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Config: SINGLE; No. of Phases: 1; No. of Elements: 1;
LM555CM
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LL4148
Kec
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
CL31B104KBCNNNC
Samsung Electro-mechanics
Samsung Electro-mechanics CL31B104KBCNNNC is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It features X7R temperature characteristics, -55 to 125 °C operating range, and compact SMT package style. Ideal for applications requiring high reliability in compact electronic devices.
MT40A256M16LY-075:F
Micron Technology
Micron Technology's MT40A256M16LY-075:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
IS42S16400J-6TL-TR
Integrated Silicon Solution
IS42S16400J-6TL-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX16 organization, 166 MHz clock frequency, and 67108864-bit memory density. Ideal for commercial applications requiring fast access times and low standby current consumption.
MT48LC16M16A2P-6A:GTR
Micron Technology's MT48LC16M16A2P-6A:GTR is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V, has a temperature range of 0-70°C, and is suitable for commercial applications requiring high-speed memory performance.
IS46TR16256BL-125KBLA2
IS46TR16256BL-125KBLA2 by Integrated Silicon Solution is a DDR3 DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 4294967296 bits. Ideal for industrial applications requiring multi-bank page burst access mode and a temperature range from -40 to 105°C.
KM44C1000BJ-7
Samsung's KM44C1000BJ-7 is a 1MX4 DRAM with 1048576 words and 70ns access time. It operates at 5V, has 3-STATE output, and uses FAST PAGE technology. Ideal for commercial applications requiring high memory density and fast data access.
IS42S16400J-7TLI
IS42S16400J-7TLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 16-bit memory width. It operates at 143 MHz clock frequency, has 4096 refresh cycles, and supports common I/O type. Ideal for industrial applications requiring fast data access and reliable performance in a compact package.
IS43QR16256B-083RBL
IS43QR16256B-083RBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1200.48 MHz clock frequency, 95°C operating temp, and 1.2mm seated height. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.
IS43R16320D-6TLI
IS43R16320D-6TLI by Integrated Silicon Solution is a 32MX16 DDR1 DRAM with 166 MHz clock frequency. Operating at 2.5V, it offers a memory density of 536870912 bits for industrial applications. Featuring synchronous operation and self-refresh capability, this DRAM has a small outline package style ideal for common I/O types.
IS42S16400J-7BLI
IS42S16400J-7BLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, 143 MHz clock frequency, and 85°C max temp. Ideal for industrial applications requiring fast memory access, it features self-refresh mode, common I/O type, and thin profile grid array package.
MT53E256M32D2DS-053AIT:B
Micron Technology's MT53E256M32D2DS-053AIT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 1866 MHz. It features a very thin profile, fine pitch grid array package style and supports common I/O type. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
MT47H32M16NF-25EAAT:H
Micron Technology's MT47H32M16NF-25EAAT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage, industrial temperature grade, and supports synchronous operation. Ideal for applications requiring high-speed memory access in automotive and industrial environments.
MT48LC8M16A2TG-75IT:GTR
Micron Technology's MT48LC8M16A2TG-75IT:GTR is a 3.3V, 8MX16 Synchronous DRAM with 8388608 words and 134217728 bit memory density. Operating in industrial temperature range, it features self-refresh capability and offers fast access time of 5.4 ns. Ideal for applications requiring high-speed data processing and reliable memory performance.
MT40A1G8WE-075EAIT:BTR
Micron Technology's MT40A1G8WE-075EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type.
MT48LC4M32B2P-6A:L
Micron Technology's MT48LC4M32B2P-6A:L is a 4MX32 DRAM with 3.3V supply, operating in synchronous mode with self-refresh capability. It features a memory density of 134217728 bits and offers fast access time of 5.4 ns. Ideal for commercial applications requiring high-speed data processing in compact devices.
EDB8132B4PB-8D-F-D
Micron Technology's EDB8132B4PB-8D-F-D is a 256MX32 LPDDR2 DRAM with a square package and PLASTIC/EPOXY body material. It operates in SYNCHRONOUS mode, has a self-refresh feature, and requires a nominal voltage of 1.2V. This memory module is suitable for applications that require high-density data storage and fast access speeds.
S27KL0642GABHI020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00025 Amp; No. of Functions: 1;
MT40A512M16LY-062EAUT:E
Micron Technology's MT40A512M16LY-062EAUT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and automotive temperature grade. Suitable for applications requiring high memory density and fast data access in automotive electronics.
AS4C512M16D3LC-12BINTR
Alliance Memory
Alliance Memory's AS4C512M16D3LC-12BINTR is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. Featuring synchronous mode and self-refresh capability, it has a package style of GRID ARRAY for applications requiring high-speed memory in compact form factors.
AS4C256M16D3LC-12BANTR
Alliance Memory's AS4C256M16D3LC-12BANTR is a 256MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 105°C operating temperature. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type in a compact grid array package.
MTA8ATF1G64HZ-3G2J1
Micron Technology's MTA8ATF1G64HZ-3G2J1 DDR DRAM MODULE features 1GX64 organization, 64-bit memory width, and 1073741824 words capacity. Operating in synchronous mode with self-refresh capability at a voltage range of 1.14V to 1.26V, it is ideal for applications requiring high-speed data processing and storage in microelectronic assemblies.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MT48LC16M16A2P-6AIT:GTR
Micron Technology's MT48LC16M16A2P-6AIT:GTR is a 16MX16 DRAM with 16777216 words and 268435456 bit memory density. It operates at 3.3V, has a peak reflow temperature of 260°C, and supports industrial temperature grade applications. With synchronous operation and four bank page burst access mode, it is ideal for high-performance computing systems.
MT48LC16M16A2P-6AIT:G
Micron Technology's MT48LC16M16A2P-6AIT:G is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 3.3V supply voltage, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high-speed memory access with a compact form factor and low power consumption.
MT48LC16M16A2P-6A:G
MT48LC16M16A2P-6A:G by Micron Technology is a 16MX16 SDRAM with 3.3V supply, 167MHz clock frequency, and 70°C operating temp. Ideal for commercial applications requiring high-speed memory access in a small outline package.
MT48LC4M32B2P-6AIT:LTR
Micron Technology's MT48LC4M32B2P-6AIT:LTR is a 4MX32 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, industrial temperature grade, and offers 5.4 ns max access time. Ideal for applications requiring high-speed memory performance in harsh environments.
MT48LC16M16A2P-6AXIT:G
Micron Technology's MT48LC16M16A2P-6AXIT:G is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, operating at 3.3V. It features a small outline, thin profile package and offers 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability.
MT48LC4M16A2P-6AIT:J
Micron Technology's MT48LC4M16A2P-6AIT:J is a 4MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density.
MT48LC16M16A2B4-6AIT:G
MT48LC16M16A2B4-6AIT:G by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact grid array package with very thin profile and fine pitch design.
MT48LC16M16A2P-6AXIT:GTR
Micron Technology's MT48LC16M16A2P-6AXIT:GTR is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory operations in a compact form factor.
MT48LC4M32B2P-6AIT:L
Micron Technology's MT48LC4M32B2P-6AIT:L is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access time, high memory density, and low power consumption.
MT48LC16M16A2P-6AAIT:G
Micron Technology's MT48LC16M16A2P-6AAIT:G is a 16MX16 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access times and high memory density in a compact small outline package.
MT48LC16M16A2P-6AIT
MT48LC16M16A2P-6AIT by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact package with common I/O type and self-refresh capability.
MT48LC4M32B2P-6AXIT:L
Micron Technology's MT48LC4M32B2P-6AXIT:L is a 3.3V, 4MX32 Synchronous DRAM with 5.4ns access time and 134217728-bit memory density. Ideal for industrial applications, it features self-refresh mode, operates synchronously, and supports four-bank page burst access mode.
MT48LC8M16A2P-6A:L
Micron Technology's MT48LC8M16A2P-6A:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory with low power consumption.
MT48LC4M16A2P-6AIT:JTR
Micron Technology's MT48LC4M16A2P-6AIT:JTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at up to 167MHz clock frequency. Ideal for industrial applications, it offers a memory density of 67108864 bits and supports common I/O type with self-refresh capability.
MT48LC8M16A2P-6AIT:L
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
MT48LC2M32B2P-6AIT:JTR
Micron Technology's MT48LC2M32B2P-6AIT:JTR is a 3.3V, 2MX32 Synchronous DRAM with 5.4ns access time. Ideal for industrial applications, it features self-refresh mode and operates at temperatures ranging from -40 to 85°C. The memory density is 67108864 bits with a memory width of 32 bits.
MT48LC4M16A2P-6A:J
Micron Technology's MT48LC4M16A2P-6A:J is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 167MHz. It features a small outline package and offers common I/O type for applications requiring fast access times and high memory density.
MT48LC16M16A2P-75IT:DTR
Micron Technology's MT48LC16M16A2P-75IT:DTR is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz. It features 16777216 words, FOUR BANK PAGE BURST access mode, and supports sequential burst lengths of 1,2,4,8. Ideal for industrial applications requiring high-speed memory performance in a compact form factor.
MT48LC8M16A2P-6AIT:LTR
Micron Technology's MT48LC8M16A2P-6AIT:LTR is a 3.3V, 8MX16 CMOS Synchronous DRAM with 8388608 words and 134217728 bit memory density. It operates in industrial temperature range (-40 to 85 °C) with self-refresh capability. Ideal for applications requiring fast access time (5.4 ns) and four bank page burst access mode.
Supply Digital Components
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