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MT48LC32M16A2P-75:CTR

Micron Technology

MT48LC32M16A2P-75:CTR by Micron Technology

Micron Technology's MT48LC32M16A2P-75:CTR is a 32MX16 DRAM with 33554432 words and 536870912 bit memory density. Operating at 3.3V, it offers synchronous operation, self-refresh capability, and a max access time of 5.4 ns. Ideal for commercial applications requiring fast and reliable memory performance.

Median Price

$9.005

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$9.005

100+ parts

-

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-

10k+ parts

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900

$9.005

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Vyrian

USA . 3,376 parts In-Stock

1+ parts

-

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3,376

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Chip Stock

USA . 2,510 parts In-Stock

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2,510

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Digiode

USA . 1,648 parts In-Stock

1+ parts

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1,648

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Ashlea Components Ltd

UK . 50 parts In-Stock

1+ parts

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50

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LWI Electronics Inc

India . 10 parts In-Stock

1+ parts

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 5,909 parts In-Stock

1+ parts

$2.480

100+ parts

-

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5,909

$2.480

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Corohmni

South Africa . 999 parts In-Stock

1+ parts

$3.775

100+ parts

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999

$3.775

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-

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AZTECH Wire

Italy . 408 parts In-Stock

1+ parts

$10.098

100+ parts

-

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408

$10.098

-

-

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Andel Nordic

Denmark . 5,788 parts In-Stock

1+ parts

$10.614

100+ parts

-

1k+ parts

$10.190

10k+ parts

$10.190

5,788

$10.614

-

$10.190

$10.190

Ampacity Inc.

Singapore . 243 parts In-Stock

1+ parts

$19.000

100+ parts

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243

$19.000

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QUARKTWIN TECHNOLOGY LTD

USA . 26,569 parts In-Stock

1+ parts

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26,569

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Argo Parts USA

USA . 4,817 parts In-Stock

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4,817

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Corphita

USA . 1,407 parts In-Stock

1+ parts

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1,407

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Continental Prestige Electronics

USA . 700 parts In-Stock

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700

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Perfect Parts

USA . 446 parts In-Stock

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446

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Microchip USA

USA . 372 parts In-Stock

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372

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$8.824

1k+ parts

$8.554

10k+ parts

$8.374

100

-

$8.824

$8.554

$8.374

Overview

Unleash the power of cutting-edge technology with Micron Technology's MT48LC32M16A2P-75:CTR DRAM module. Designed for high-performance applications, this memory chip offers seamless synchronous operation and self-refresh capabilities. With a small outline and thin profile package, this product is perfect for space-constrained designs. Trust Micron Technology's expertise in memory solutions to deliver reliable performance and unmatched value. Upgrade your systems today and experience the benefits of top-notch memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the DRAM, ensuring reliable performance and longevity.

Surface Mount: YES

Being surface mountable makes the DRAM easy to install and suitable for compact electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster and more efficient data transfers, enhancing the overall performance of the DRAM.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is standard and widely supported, making this DRAM compatible with a variety of systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile package style helps save space in electronic devices while still offering high memory density.

Organization: 32MX16

The 32MX16 organization means the DRAM has a high capacity of 33554432 words, allowing for ample storage and multitasking capabilities.

Technology: CMOS

The use of CMOS technology ensures low power consumption and high speed operation, making this DRAM energy-efficient and responsive.

Memory IC Type: SYNCHRONOUS DRAM

Synchronous DRAM offers improved performance over asynchronous alternatives, making this memory IC ideal for high-speed computing tasks.

Technical Specifications

DRAM MT48LC32M16A2P-75:CTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC32M16A2P-75:CTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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