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MT48LC4M32B2TG-7IT:GTR

Micron Technology

MT48LC4M32B2TG-7IT:GTR by Micron Technology

Micron Technology's MT48LC4M32B2TG-7IT:GTR is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access time and high memory density in a compact small outline package.

Median Price

$11.728

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,833 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,833

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-

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Sensible Micro Corp

USA . 124 parts In-Stock

1+ parts

-

100+ parts

$11.728

1k+ parts

$10.899

10k+ parts

-

124

-

$11.728

$10.899

-

Martec Srl

Italy . 109 parts In-Stock

1+ parts

-

100+ parts

-

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109

-

-

-

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Digiode

USA . 105 parts In-Stock

1+ parts

-

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105

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

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10

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 3,200 parts In-Stock

1+ parts

$2.232

100+ parts

-

1k+ parts

$2.143

10k+ parts

$2.143

3,200

$2.232

-

$2.143

$2.143

Corohmni

South Africa . 133 parts In-Stock

1+ parts

$5.861

100+ parts

-

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133

$5.861

-

-

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Semicontronic

India . 274 parts In-Stock

1+ parts

$6.000

100+ parts

$5.850

1k+ parts

$5.820

10k+ parts

-

274

$6.000

$5.850

$5.820

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AZTECH Wire

Italy . 690 parts In-Stock

1+ parts

$16.996

100+ parts

-

1k+ parts

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10k+ parts

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690

$16.996

-

-

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Ampacity Inc.

Singapore . 316 parts In-Stock

1+ parts

$21.000

100+ parts

-

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10k+ parts

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316

$21.000

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Continental Prestige Electronics

USA . 4,401 parts In-Stock

1+ parts

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100+ parts

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4,401

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Argo Parts USA

USA . 3,939 parts In-Stock

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3,939

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Corphita

USA . 1,822 parts In-Stock

1+ parts

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1,822

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Bastille Electronics

Australia . 450 parts In-Stock

1+ parts

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100+ parts

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450

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Microchip USA

USA . 344 parts In-Stock

1+ parts

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100+ parts

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344

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Overview

Experience unparalleled performance and reliability with the MT48LC4M32B2TG-7IT:GTR by Micron Technology. As a leader in the industry, Micron Technology's DRAM products are known for their superior quality and cutting-edge technology. This memory module is perfect for a wide range of applications, offering seamless operation and fast data access. Elevate your system's performance with this innovative product, providing exceptional value and benefits to meet all your memory needs. Trust Micron Technology for top-notch solutions that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and lightweight, ensuring the product is robust and easy to handle during installation.

Surface Mount: YES

Surface mount technology allows for easy and secure installation on PCBs, saving space and simplifying the assembly process.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and coordinated data transfer, enhancing overall system performance and stability.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage level of 3.3V, making it compatible with a wide range of systems and power sources.

Memory Density: 134217728 bit

High memory density allows for storing a large amount of data in a compact space, ideal for applications requiring high speed and capacity.

Technical Specifications

DRAM MT48LC4M32B2TG-7IT:GTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.5 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G86

JESD-609 Code:

e0

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

MT48LC4M32B2TG-7IT:GTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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