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IS46TR16256BL-125KBLA2

Integrated Silicon Solution

IS46TR16256BL-125KBLA2 by Integrated Silicon Solution

IS46TR16256BL-125KBLA2 by Integrated Silicon Solution is a DDR3 DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 4294967296 bits. Ideal for industrial applications requiring multi-bank page burst access mode and a temperature range from -40 to 105°C.

Median Price

$18.960

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8,677 parts In-Stock

1+ parts

$18.960

100+ parts

$16.270

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8,677

$18.960

$16.270

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DigiKey

USA . 41 parts In-Stock

1+ parts

$18.960

100+ parts

$16.613

1k+ parts

$15.197

10k+ parts

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41

$18.960

$16.613

$15.197

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 80 parts In-Stock

1+ parts

$9.769

100+ parts

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80

$9.769

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Vyrian

USA . 11,769 parts In-Stock

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11,769

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$9.574

100+ parts

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1k+ parts

$9.191

10k+ parts

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2,000

$9.574

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$9.191

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Continental Prestige Electronics

USA . 2,152 parts In-Stock

1+ parts

$9.769

100+ parts

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$9.574

2,152

$9.769

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$9.574

Formix International (Excess)

India . 13,300 parts In-Stock

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13,300

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Argo Parts USA

USA . 962 parts In-Stock

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Overview

Elevate your computing experience with the IS46TR16256BL-125KBLA2 by Integrated Silicon Solution. Designed with precision and reliability in mind, this DDR3 DRAM module offers exceptional performance and efficiency for a wide range of applications. The advanced CMOS technology ensures seamless operation, while the industrial-grade temperature rating guarantees durability in challenging environments. With a high memory density of 4294967296 bits and a multi-bank page burst access mode, this module is perfect for demanding tasks that require fast and reliable data processing. Upgrade to the IS46TR16256BL-125KBLA2 today and unlock a new level of performance and productivity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and protection for the components inside, ensuring a longer lifespan for the product.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise coordination between data input and output, leading to faster and more efficient performance.

Nominal Supply Voltage / Vsup (V): 1.35

Low supply voltage of 1.35V helps in reducing power consumption and heat generation, making the product more energy-efficient.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance ensures reliable operation in various environmental conditions, making it suitable for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and scalability, making the product efficient and versatile.

Technical Specifications

DRAM IS46TR16256BL-125KBLA2 attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B96

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

9 mm

Trade Compliance

IS46TR16256BL-125KBLA2 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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