Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Micron Technology's MT16KTF2G64HZ-1G6A1 is a 2GX64 DDR DRAM MODULE with 64-bit memory width and 137.4 Gb density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.
Median Price
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Vyrian
Digiode
Nova Conductors
Netsource Technology, Inc.
Ampacity Inc.
$5.000
AZTECH Wire
$17.700
Argo Parts USA
Aranea Global
Continental Prestige Electronics
Corphita
Perfect Parts
Rectangular shape makes it easy to handle and install in various devices.
Synchronous operation ensures efficient and synchronized data transfer within the memory module.
Self-refresh capability helps in reducing power consumption and improving overall performance.
Low nominal supply voltage of 1.35V helps in saving power and reducing heat generation.
Having 204 terminals ensures reliable connectivity and data transmission.
Microelectronic assembly allows for compact and efficient integration of the DRAM module into devices.
With a maximum operating temperature of 70°C, this DRAM module can withstand high temperatures during operation.
Organized as 2GX64, this DRAM module provides a balance of capacity and data transfer speed.
Operational at a minimum temperature of 0°C, making it suitable for a wide range of environments.
Zig-zag terminal position helps in efficient signal transfer and reduces the chances of signal interference.
Maximum seated height of 30.15 mm allows for flexibility in designing compact devices.
Narrow width of 3.8 mm enables easy integration into devices with space constraints.
With a minimum supply voltage of 1.283V, this DRAM module operates efficiently even at low power levels.
With a maximum time of 30 seconds at peak reflow temperature, this DRAM module ensures reliable soldering during manufacturing processes.
Peak reflow temperature of 260°C ensures proper soldering and connectivity of the DRAM module.
Length of 67.6 mm provides a standard form factor for easy integration into various devices.
Commercial temperature grade ensures reliable operation in standard operating conditions.
Dual bank page burst access mode enhances data access speeds and overall performance of the DRAM module.
CMOS technology provides low power consumption and high reliability for the DRAM module.
No lead terminal form complies with modern environmental regulations and reduces the environmental impact of the product.
Having 2147483648 words capacity allows for storing large amounts of data and running multiple applications simultaneously.
Memory width of 64 bits enables fast data transfer and processing capabilities.
Represented by the code 2G, indicating a high memory capacity suitable for demanding computational tasks.
With a maximum supply voltage of 1.45V, this DRAM module ensures safe operation without risking overvoltage damage.
High memory density of 137438953472 bits provides ample storage capacity for data-intensive applications.
Utilizing DDR DRAM technology, this module offers high-speed data transfer rates and reliable performance for a wide range of applications.
DRAM MT16KTF2G64HZ-1G6A1 attributes and parameters. Explore more DRAM devices from Micron Technology
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MT16KTF2G64HZ-1G6A1 Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
PCN Obsolescence/ EOL - Mult Devices 30/Aug/2017
PCN Packaging - 2D barcode 15/Jul/2016 Label 12/Sep/2016
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
1N4148
Leshan Radio
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
STM32F405RGT6
STMicroelectronics
STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.
BAV99
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Weitron Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Output Current: .215 A; JESD-609 Code: e0; Maximum Forward Voltage (VF): .715 V;
M24308/2-1F
Amphenol
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body or Shell Style: RECEPTACLE; Body Length: 1.228 inch; No. of Rows Loaded: 2;
SMBJ18CA
Mde Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;
General Instrument
1N4148WT
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Vishay Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148W-7-F
Diodes Incorporated
1N4148W-7-F by Diodes Inc. is a single rectifier diode with 0.715V max forward voltage and 100V max reverse voltage. Ideal for applications requiring fast switching speeds, it has a small outline package style and matte tin terminal finish, making it suitable for surface mount PCB designs.
Rectron
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
Semitronics
CRG0805F10R
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
Sangdest Microelectronics (Nanjing)
1552200168
Molex
WIRE AND CABLE;
Sinyork
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
BSS138
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
MT40A256M16GE-083E:BTR
Micron Technology
Micron Technology's MT40A256M16GE-083E:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like servers, PCs, and networking equipment.
MT46H64M16LFBF-5IT:BTR
Micron Technology's MT46H64M16LFBF-5IT:BTR is a DDR1 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and a max access time of 5ns. Ideal for industrial applications requiring high memory density and fast data processing.
MT48LC16M16A2P-7E
MT48LC16M16A2P-7E by Micron Technology is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 143 MHz and has an access time of 5.4 ns. This memory chip is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.
MT46V32M16P-6T:F
Micron Technology's MT46V32M16P-6T:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT40A256M16LY-062EAIT:FTR
Micron Technology's MT40A256M16LY-062EAIT:FTR is a DDR4 DRAM with 256MX16 organization, operating at 1600 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics due to AEC-Q100 screening level.
MT46H64M16LFBF-5IT:B
Micron Technology's MT46H64M16LFBF-5IT:B is a DDR1 DRAM with 64MX16 organization, operating at 200 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring fast memory access and low power consumption.
S70KS1282GABHB020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Memory Width: 8;
MT46H32M16LFBF-5IT:C
Micron Technology's MT46H32M16LFBF-5IT:C is a 32MX16 DDR1 DRAM with 536870912-bit memory density. It operates at 200 MHz with a supply voltage of 1.8V, suitable for industrial applications requiring fast data access and low power consumption. The package style is grid array, very thin profile, fine pitch, making it ideal for space-constrained designs.
IS42S16400J-6TLI
Integrated Silicon Solution
IS42S16400J-6TLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 166 MHz Clock Frequency. Operating at 3.3V, it offers 4096 Refresh Cycles and supports Four Bank Page Burst Access Mode. Ideal for industrial applications requiring high-speed memory performance in compact form factors.
MT40A1G8SA-062EIT:R
Micron Technology's MT40A1G8SA-062EIT:R is a DDR4 DRAM with 1GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT4KTF25664HZ-1G9P1
Micron Technology's MT4KTF25664HZ-1G9P1 is a DDR3L DRAM MODULE with 256MX64 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and single bank page burst access mode. Ideal for commercial applications requiring high memory density and reliable performance in microelectronic assemblies.
NT6DM32M16BD-T1I
Nanya Technology
NT6DM32M16BD-T1I by Nanya Technology is a DDR1 DRAM with 32MX16 organization, 536870912 bit memory density, and operates at 1.8V. Suitable for industrial applications, it features synchronous operation, self-refresh capability, and a very thin profile grid array package style.
IS42S16320D-7BLI
IS42S16320D-7BLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with a max clock frequency of 143 MHz. It is commonly used in industrial applications and operates at a temperature range of -40 to 85 °C.
MT41K64M16TW-107:J
MT41K64M16TW-107:J by Micron Technology is a DDR3L DRAM with 64MX16 organization, operating at 933 MHz. It features a thin profile grid array package and consumes up to 219 mA. Ideal for applications requiring high-speed synchronous memory with low power consumption.
MT8D432M-6X
MT8D432M-6X by Micron Technology is a 4MX32 EDO DRAM MODULE with 32 memory width and 134217728 bit memory density. It operates at 5V, has a max access time of 60ns, and uses FAST PAGE WITH EDO access mode. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.
MT47H64M16NF-25EIT:M
MT47H64M16NF-25EIT:M by Micron Technology is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features 1.8V supply voltage, 84 terminals in a grid array package style, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A512M16LY-062EAUT:E
Micron Technology's MT40A512M16LY-062EAUT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and automotive temperature grade. Suitable for applications requiring high memory density and fast data access in automotive electronics.
K4B2G0846D-HCH9
Samsung
Samsung's K4B2G0846D-HCH9 DDR3 DRAM features 256MX8 organization, 667 MHz clock frequency, and 2147483648 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max operating temperature of 85°C.
MTA9ADF1G72AZ-3G2E1
Micron Technology's MTA9ADF1G72AZ-3G2E1 is a 1GX72 DDR DRAM MODULE with 1073741824 words and 77309411328 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.
S70KL1283DPBHV020
Infineon Technologies
S70KL1283DPBHV020 by Infineon Technologies is a 16MX8 DRAM with 16777216 words and memory density of 134217728 bits. Operating at a max clock frequency of 166 MHz, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact electronic devices.
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MT16JSF25664HY-1G4D1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.425 V;
MT16HTF25664HIZ-667H1
DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT16HTF25664HIZ-667M1
DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;
MT16HTF25664HZ-800M1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Shape: RECTANGULAR; Technology: CMOS; Organization: 256MX64;
MT16HTF51264AY-667A1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT16D232G-6L
FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 72; Package Code: SIMM; Refresh Cycles: 1024; Package Shape: RECTANGULAR;
MT16D164G8S
FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Refresh Cycles: 1024; Package Shape: RECTANGULAR;
MT16D232G-6X
EDO DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 72; Package Code: SIMM; Refresh Cycles: 1024; Package Shape: RECTANGULAR;
MT16D232G-6XS
EDO DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 72; Refresh Cycles: 1024; Package Shape: RECTANGULAR; Technology: CMOS;
MT16D164G-6L
FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Refresh Cycles: 1024; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 5;
MT16D164G-7L
FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Refresh Cycles: 1024; Package Shape: RECTANGULAR; Surface Mount: NO;
MT16D164M-6L
FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Refresh Cycles: 1024; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 4.5 V;
MT16D232G-6
MT16D164G-8L
FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Refresh Cycles: 1024; Package Shape: RECTANGULAR; Access Mode: FAST PAGE;
MT16D232G-6S
MT16D164G-7
MT16D164M-7
MT16D164G-7S
MT16D164M-7L
FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Refresh Cycles: 1024; Package Shape: RECTANGULAR; Organization: 1MX64;
Supply Digital Components
$106.00
$54.25
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$7.29
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12,000 In-Stock
Total price ≈ $80,197.29
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