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MT16KTF2G64HZ-1G6A1

Micron Technology

MT16KTF2G64HZ-1G6A1 by Micron Technology

Micron Technology's MT16KTF2G64HZ-1G6A1 is a 2GX64 DDR DRAM MODULE with 64-bit memory width and 137.4 Gb density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 21,100 parts In-Stock

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21,100

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Vyrian

USA . 2,341 parts In-Stock

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2,341

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Digiode

USA . 1,612 parts In-Stock

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1,612

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Nova Conductors

Japan . 57 parts In-Stock

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57

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Netsource Technology, Inc.

USA . 55 parts In-Stock

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55

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,233 parts In-Stock

1+ parts

$5.000

100+ parts

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1,233

$5.000

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AZTECH Wire

Italy . 770 parts In-Stock

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$17.700

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770

$17.700

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Argo Parts USA

USA . 5,265 parts In-Stock

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5,265

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Continental Prestige Electronics

USA . 1,519 parts In-Stock

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1,519

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Corphita

USA . 664 parts In-Stock

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664

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Perfect Parts

USA . 112 parts In-Stock

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112

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Overview

Get ready to experience top-notch performance with the MT16KTF2G64HZ-1G6A1 by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers high-quality DRAM modules that are perfect for a wide range of applications. This product offers outstanding value and benefits to customers looking for reliable and efficient memory solutions. With its synchronous operation mode and self-refresh capabilities, this DDR DRAM module provides seamless performance you can count on. Upgrade your system with Micron Technology and enjoy a superior computing experience like never before.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape makes it easy to handle and install in various devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient and synchronized data transfer within the memory module.

Self Refresh: YES

Self-refresh capability helps in reducing power consumption and improving overall performance.

Nominal Supply Voltage / Vsup (V): 1.35

Low nominal supply voltage of 1.35V helps in saving power and reducing heat generation.

No. of Terminals: 204

Having 204 terminals ensures reliable connectivity and data transmission.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly allows for compact and efficient integration of the DRAM module into devices.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this DRAM module can withstand high temperatures during operation.

Organization: 2GX64

Organized as 2GX64, this DRAM module provides a balance of capacity and data transfer speed.

Minimum Operating Temperature: 0 °C

Operational at a minimum temperature of 0°C, making it suitable for a wide range of environments.

Terminal Position: ZIG-ZAG

Zig-zag terminal position helps in efficient signal transfer and reduces the chances of signal interference.

Maximum Seated Height: 30.15 mm

Maximum seated height of 30.15 mm allows for flexibility in designing compact devices.

Width: 3.8 mm

Narrow width of 3.8 mm enables easy integration into devices with space constraints.

Minimum Supply Voltage (Vsup): 1.283 V

With a minimum supply voltage of 1.283V, this DRAM module operates efficiently even at low power levels.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this DRAM module ensures reliable soldering during manufacturing processes.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures proper soldering and connectivity of the DRAM module.

Length: 67.6 mm

Length of 67.6 mm provides a standard form factor for easy integration into various devices.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliable operation in standard operating conditions.

Access Mode: DUAL BANK PAGE BURST

Dual bank page burst access mode enhances data access speeds and overall performance of the DRAM module.

Technology: CMOS

CMOS technology provides low power consumption and high reliability for the DRAM module.

Terminal Form: NO LEAD

No lead terminal form complies with modern environmental regulations and reduces the environmental impact of the product.

No. of Words: 2147483648 words

Having 2147483648 words capacity allows for storing large amounts of data and running multiple applications simultaneously.

Memory Width: 64

Memory width of 64 bits enables fast data transfer and processing capabilities.

No. of Words Code: 2G

Represented by the code 2G, indicating a high memory capacity suitable for demanding computational tasks.

Maximum Supply Voltage (Vsup): 1.45 V

With a maximum supply voltage of 1.45V, this DRAM module ensures safe operation without risking overvoltage damage.

Memory Density: 137438953472 bit

High memory density of 137438953472 bits provides ample storage capacity for data-intensive applications.

Memory IC Type: DDR DRAM MODULE

Utilizing DDR DRAM technology, this module offers high-speed data transfer rates and reliable performance for a wide range of applications.

Technical Specifications

DRAM MT16KTF2G64HZ-1G6A1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

SELF REFRESH; WD-MAX

JESD-30 Code:

R-XZMA-N204

Length:

67.6 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

204

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

260

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

ZIG-ZAG

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.8 mm

Trade Compliance

MT16KTF2G64HZ-1G6A1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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