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MT16HTF25664HIZ-667M1

Micron Technology

MT16HTF25664HIZ-667M1 by Micron Technology

Micron Technology's MT16HTF25664HIZ-667M1 is a 256MX64 DDR DRAM MODULE with 17179869184 bit memory density. It operates synchronously at 1.8V, featuring dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring reliable, high-speed memory performance in a compact MICROELECTRONIC ASSEMBLY package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 16,000 parts In-Stock

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16,000

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Vyrian

USA . 5,259 parts In-Stock

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5,259

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Digiode

USA . 1,037 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,567 parts In-Stock

1+ parts

$3.000

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1,567

$3.000

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AZTECH Wire

Italy . 473 parts In-Stock

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$16.440

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473

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Argo Parts USA

USA . 5,530 parts In-Stock

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Continental Prestige Electronics

USA . 3,220 parts In-Stock

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Corphita

USA . 2,303 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Overview

Elevate your system's performance with the MT16HTF25664HIZ-667M1 by Micron Technology. This high-quality DDR DRAM MODULE offers unparalleled reliability and efficiency, thanks to Micron's cutting-edge technology and industrial-grade components. Ideal for a wide range of applications, this synchronous memory module provides seamless operation and enhanced data processing capabilities. Upgrade your devices today and experience the value and benefits that only Micron can deliver.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space and easy integration into system designs.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a consistent and precise rate, enhancing overall system performance.

Self Refresh: YES

Self-refresh capability allows for power savings and improved energy efficiency during idle periods.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at an optimal voltage level for performance and reliability.

No. of Terminals: 200

Plenty of terminals for connectivity and data transfer, ensuring seamless communication within the system.

Maximum Operating Temperature: 85 °C

Operates reliably within a wide temperature range, suitable for demanding industrial environments.

Organization: 256MX64

Efficient organization of memory cells for high capacity and fast data access.

Minimum Operating Temperature: -40 °C

Can handle extreme cold temperatures, making it suitable for a variety of operating environments.

Maximum Seated Height: 30.15 mm

Compact size and low profile for easy installation and integration in space-constrained systems.

Width: 3.8 mm

Narrow width for efficient use of PCB space and streamlined system layout.

Minimum Supply Voltage (Vsup): 1.7 V

Allows for flexibility in power supply options while maintaining stable operation.

Length: 67.6 mm

Optimal length for fitting into standard system configurations without wasting space.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial conditions with reliable performance.

Access Mode: DUAL BANK PAGE BURST

Optimized access mode for fast and efficient data retrieval, enhancing system responsiveness.

Technology: CMOS

Uses CMOS technology for low power consumption, heat efficiency, and high performance.

Terminal Form: NO LEAD

Lead-free terminal form for environmentally friendly manufacturing and RoHS compliance.

No. of Words: 268435456 words

Massive memory capacity for storing large amounts of data and running complex applications.

Memory Width: 64

64-bit memory width for high-speed data transfer and processing capabilities.

No. of Words Code: 256M

Uses 256M coding scheme for efficient addressing and data storage.

Maximum Supply Voltage (Vsup): 1.9 V

Can operate at a slightly higher voltage for enhanced performance in demanding tasks.

Memory Density: 17179869184 bit

High memory density for storing vast amounts of data in a compact form factor.

Memory IC Type: DDR DRAM MODULE

DDR DRAM technology for high-speed data processing and multitasking capabilities.

Technical Specifications

DRAM MT16HTF25664HIZ-667M1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

SELF REFRESH; WD-MAX

JESD-30 Code:

R-XZMA-N200

Length:

67.6 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

200

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

ZIG-ZAG

Width:

3.8 mm

Trade Compliance

MT16HTF25664HIZ-667M1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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