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MT41K512M16HA-107:A

Micron Technology

MT41K512M16HA-107:A by Micron Technology

Micron Technology's MT41K512M16HA-107:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.

Median Price

$38.490

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 75 parts In-Stock

1+ parts

$23.811

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75

$23.811

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IBS Electronics

USA . 1,395 parts In-Stock

1+ parts

$38.490

100+ parts

$29.666

1k+ parts

$29.100

10k+ parts

-

1,395

$38.490

$29.666

$29.100

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Component Electronics Inc.

Canada . 4 parts In-Stock

1+ parts

$50.000

100+ parts

$37.500

1k+ parts

$32.500

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4

$50.000

$37.500

$32.500

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Cyclops Electronics Ltd

UK . 6,290 parts In-Stock

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Vyrian

USA . 5,854 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,547 parts In-Stock

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Digiode

USA . 204 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

. 33 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,107 parts In-Stock

1+ parts

$2.380

100+ parts

-

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4,107

$2.380

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Corohmni

South Africa . 393 parts In-Stock

1+ parts

$4.674

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393

$4.674

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$5.479

100+ parts

$5.205

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$5.205

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60

$5.479

$5.205

$5.205

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Andel Nordic

Denmark . 449 parts In-Stock

1+ parts

$7.877

100+ parts

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1k+ parts

$7.562

10k+ parts

$7.562

449

$7.877

-

$7.562

$7.562

Semicontronic

India . 1,552 parts In-Stock

1+ parts

$11.000

100+ parts

$10.725

1k+ parts

$10.670

10k+ parts

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1,552

$11.000

$10.725

$10.670

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AZTECH Wire

Italy . 440 parts In-Stock

1+ parts

$11.253

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440

$11.253

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Ampacity Inc.

Singapore . 195 parts In-Stock

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$21.000

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195

$21.000

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Continental Prestige Electronics

USA . 4,781 parts In-Stock

1+ parts

$23.811

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$23.335

4,781

$23.811

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$23.335

Netroflash

USA . 50 parts In-Stock

1+ parts

$23.811

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$23.335

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50

$23.811

$23.335

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S.R.D Solutions

India . 30,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,463 parts In-Stock

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Authorized Procurement Solutions

USA . 2,698 parts In-Stock

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2,698

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Kepictronics

USA . 2,000 parts In-Stock

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Futuretech Components

Singapore . 1,938 parts In-Stock

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RC Electronics

USA . 1,570 parts In-Stock

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Corphita

USA . 1,205 parts In-Stock

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Argo Parts USA

USA . 743 parts In-Stock

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iodParts Technologies Inc.

India . 75 parts In-Stock

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Overview

Elevate your device's performance with the MT41K512M16HA-107:A by Micron Technology, a leading manufacturer of high-quality DRAM components. This versatile memory module offers seamless integration, reliable operation, and improved efficiency for a wide range of applications. Whether you're gaming, multitasking, or running complex programs, this innovative product delivers unmatched value, benefits, and advantages to meet all your computing needs. Upgrade to Micron Technology and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making it a good choice for a wide range of applications.

Surface Mount: YES

This feature allows for easy and efficient installation, saving time and effort during assembly.

Package Shape: RECTANGULAR

The rectangular shape is space-efficient and easy to handle, making the product convenient to work with.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination, improving overall system performance.

Self Refresh: YES

Self-refresh capability helps conserve power and extend battery life in portable devices.

Nominal Supply Voltage / Vsup (V): 1.35

Operating at a lower voltage reduces power consumption and heat generation, contributing to energy efficiency.

No. of Terminals: 96

A higher number of terminals allow for more connections and functionality in complex systems.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

This package style offers high density and efficient signal routing, maximizing performance in a compact design.

Maximum Operating Temperature: 85 °C

With a high maximum temperature range, this product is suitable for demanding environments and applications.

Organization: 512MX16

This organization provides a balance of capacity and speed, delivering optimal performance for a variety of tasks.

Minimum Operating Temperature: 0 °C

The low minimum temperature ensures reliability and functionality in cold conditions.

Terminal Position: BOTTOM

Bottom terminal position offers easy access and mounting options, simplifying installation and maintenance.

Maximum Seated Height: 1.2 mm

With a low seated height, this product can be used in slim devices and space-constrained applications.

Width: 9 mm

The narrow width allows for efficient use of space on a circuit board, enabling compact designs.

Minimum Supply Voltage (Vsup): 1.283 V

Operating at a low minimum voltage ensures compatibility with a wide range of systems and power sources.

Length: 14 mm

The moderate length of the product offers a balance between compactness and accessibility for installation and handling.

Access Mode: MULTI BANK PAGE BURST

Multi-bank access and page burst mode optimize data transfer speeds and efficiency in memory access operations.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the reliability and efficiency of the product.

Terminal Form: BALL

Ball terminal form provides reliable connections and easy soldering, ensuring secure and stable operation.

No. of Words: 536870912 words

The high number of words supported allows for ample storage capacity and data processing capabilities.

Memory Width: 16

With a memory width of 16, this product can handle a wide range of data sizes and operations efficiently.

Terminal Pitch: 0.8 mm

The small terminal pitch enables high-density mounting and space-saving design in electronic systems.

No. of Words Code: 512M

This code indicates the memory capacity, allowing for easy identification and compatibility in system integration.

Maximum Supply Voltage (Vsup): 1.45 V

Operating at a safe maximum voltage ensures system stability and protection against voltage spikes.

Memory Density: 8589934592 bit

The high memory density offers ample storage capacity for large data sets and high-performance computing tasks.

Memory IC Type: DDR3L DRAM

The DDR3L DRAM type provides high-speed data transfer rates and efficient performance in a variety of computing applications.

Technical Specifications

DRAM MT41K512M16HA-107:A attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B96

Length:

14 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

9 mm

Trade Compliance

MT41K512M16HA-107:A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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