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K4F6E3S4HM-MGCJ

Samsung Electro-mechanics

K4F6E3S4HM-MGCJ by Samsung Electro-mechanics

Samsung Electro-mechanics' K4F6E3S4HM-MGCJ is a LPDDR4 DRAM with 512MX32 organization, 17179869184 bit memory density, and operates at 1.1V. It features a GRID ARRAY package style and is suitable for applications requiring high-speed data processing in devices such as smartphones and tablets.

Median Price

$8.750

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

K4F6E3S4HM-MGCJ by Samsung Electro-mechanics
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DigiKey

USA . 5,120 parts In-Stock

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Chip Stock

USA . 6,400 parts In-Stock

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Vyrian

USA . 5,067 parts In-Stock

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Cyclops Electronics Ltd

UK . 5,040 parts In-Stock

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Component Sense

UK . 129 parts In-Stock

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Conversion2

USA . 99 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 69 parts In-Stock

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$4.455

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Aztec Data Supply Inc.

USA . 97 parts In-Stock

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$4.900

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Semicontronic

India . 4,885 parts In-Stock

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$7.440

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$7.254

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$7.217

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Ampacity Inc.

Singapore . 4,819 parts In-Stock

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$7.440

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Kepictronics

USA . 9,000 parts In-Stock

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Argo Parts USA

USA . 3,598 parts In-Stock

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RC Electronics

USA . 1,768 parts In-Stock

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Continental Prestige Electronics

USA . 231 parts In-Stock

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iodParts Technologies Inc.

India . 188 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Experience seamless performance and reliability with the K4F6E3S4HM-MGCJ by Samsung Electro-mechanics. As a leading manufacturer in the industry, Samsung Electro-mechanics delivers exceptional quality DRAM modules that cater to various applications. From increased processing speeds to improved multitasking capabilities, this LPDDR4 DRAM offers unparalleled value to customers. Upgrade your devices with cutting-edge technology and enjoy the benefits of faster data transfer and enhanced efficiency. Trust Samsung Electro-mechanics for superior memory solutions that elevate your user experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the DRAM, ensuring a longer lifespan.

Surface Mount: YES

Surface mount technology allows for easy installation on circuit boards, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent control of data transfer, increasing flexibility and efficiency in data processing.

Nominal Supply Voltage / Vsup (V): 1.1

Low supply voltage helps in reducing power consumption and heat generation, making the product energy-efficient.

Maximum Operating Temperature: 85 °C

High maximum operating temperature range ensures stable performance even in demanding environmental conditions.

Organization: 512MX32

Efficient organization allows for high data throughput and seamless operation in applications requiring large memory capacity.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and reliable performance, making it a preferred choice for memory solutions.

Memory IC Type: LPDDR4 DRAM

LPDDR4 DRAM technology provides high memory density, fast data transfer rates, and low power consumption, making it ideal for mobile, automotive, and other power-sensitive applications.

Technical Specifications

DRAM K4F6E3S4HM-MGCJ attributes and parameters. Explore more DRAM devices from Samsung Electro-mechanics

Specs

JESD-30 Code:

R-PBGA-B200

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Terminals:

200

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

512MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Nominal Supply Voltage / Vsup (V):

1.1

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Position:

BOTTOM

Trade Compliance

K4F6E3S4HM-MGCJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Samsung Electro-mechanics

Established in 1973, Samsung Electro-Mechanics has become a remarkable developer and manufacturer of key electronic components not only in Korea but also in other parts of the world. The full name of Samsung Electro-Mechanics in English is referring again to electronics and machinery. Samsung Electro-Mechanics began with a focus on production of audio/video parts and laid the foundation for the technological independence of Korea’s parts industry. In the 1980s, we diversified our business areas into materials and computer parts. Subsequently, in the 1990s, we focused on developing promising next-generation products such as chip parts, mobile communication parts, and optical parts. Since the start of the 2000s, the company has been seeking to further develop strategic technologies and create business synergy based on core technologies of materials, multilayer thin-film molding, and high-frequency circuit design. With this at our core, we are focusing on fostering the business of chip parts, camera modules, communication modules and boards. Samsung Electro-Mechanics will expand its business portfolio through continuous new product development through first-class core products and technology convergence and integration, while at the same time fostering the next-generation growth business and moving forward as a leader in the electronic parts industry.

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