Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Microsemi's W3H32M64E-533SBI DDR2 DRAM features 32MX64 organization, 1.8V supply voltage, and operates synchronously. Ideal for industrial applications with a temperature range of -40 to 85°C, it offers self-refresh capability and a memory density of 2147483648 bits.
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This material provides a good balance of cost and durability for the package, making the product cost-effective and reliable.
Being surface mountable makes the product easy to integrate into circuit boards, saving space and simplifying assembly.
Synchronous operation ensures efficient communication with the rest of the system, improving overall performance.
The 1.8V supply voltage is common in many systems, ensuring compatibility and ease of integration.
Having a large number of terminals allows for greater connectivity and data transfer capabilities.
The high maximum operating temperature allows the product to function reliably in a wide range of environmental conditions.
The 32Mx64 organization provides a good balance of storage capacity and data processing capabilities.
The low minimum operating temperature ensures the product can still function in extreme cold environments.
CMOS technology offers low power consumption and high noise immunity, increasing energy efficiency and stability.
DDR2 DRAM provides fast data access speeds and high bandwidth, making the product suitable for demanding applications.
DRAM W3H32M64E-533SBI attributes and parameters. Explore more DRAM devices from Microsemi
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W3H32M64E-533SBI Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.
1N4148
International Components
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;
2N2222A
Microsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;
BAV99
Vishay Sprague
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM7805CT
Onsemi
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
0460-202-16141
TE Connectivity
TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.
FDD5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
1N4148WT
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
SS14
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
First Components International
OPA2277UA/2K5
Texas Instruments
OPA2277UA/2K5 by Texas Instruments is a dual operational amplifier with low offset voltage of 100 uV and micropower consumption of 0.004 uA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1 MHz. With a compact rectangular package style, it is suitable for surface mount designs in various electronic systems.
1N4148WS
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.
LM555CM
Renesas Electronics
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Leshan Radio
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
General Semiconductor
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;
Semicoa
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
RC0805FR-0710KL
Yageo
Yageo's RC0805FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. Ideal for applications requiring resistance to operate b/w -55°C to 155°C, such as in automotive electronics or industrial control systems. Features metal glaze/thick film technology and matte tin finish with nickel barrier.
BSS123LT1G
BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.
MT48LC8M16A2P-75IT:G
Micron Technology
Micron Technology's MT48LC8M16A2P-75IT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 133MHz clock frequency. It features self-refresh mode, common I/O type, and industrial temperature grade. Ideal for applications requiring fast memory access and high data density in compact designs.
IS42S32400F-7TL
Integrated Silicon Solution
IS42S32400F-7TL by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, operating at 143MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
IS42S16100H-7BL
IS42S16100H-7BL by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. It features dual bank page burst access mode and offers a memory density of 16777216 bits. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
MT48LC4M32B2P-6A:LTR
Micron Technology's MT48LC4M32B2P-6A:LTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70°C. Featuring self-refresh and four-bank page burst access mode, it offers a memory density of 134217728 bits for commercial applications requiring fast access times of up to 5.4 ns.
MT48LC4M32B2TG-7:G
Micron Technology's MT48LC4M32B2TG-7:G is a 4MX32 SDRAM with 3.3V supply, 143MHz clock frequency, and 86 terminals. It operates synchronously with self-refresh capability and offers common I/O type. Ideal for commercial applications requiring fast access time and high memory density.
KM44C4100AT-6
Samsung
Samsung's KM44C4100AT-6 is a 4MX4 DRAM with 3-STATE output, operating at 5V. It features fast page access mode, 60ns max access time, and 2048 refresh cycles. Ideal for applications requiring high-speed memory operations in commercial temperature environments.
K4T1G164QG-BCE7
Samsung's K4T1G164QG-BCE7 DDR2 DRAM features 64MX16 organization, operates at 400 MHz clock frequency, and has a memory density of 1073741824 bit. Ideal for applications requiring high-speed data processing and storage in devices with limited space.
MT48LC8M16A2P-7ELTR
Micron Technology's MT48LC8M16A2P-7ELTR is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 0-70 °C. It features Self Refresh and Four Bank Page Burst access mode, suitable for commercial applications requiring high memory density and fast access times.
MT53E1G32D2FW-046IT:B
Micron Technology's MT53E1G32D2FW-046IT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices like smartphones and tablets.
K4T1G164QF-BCE6
Samsung's K4T1G164QF-BCE6 is a 64MX16 DDR2 DRAM with 333 MHz clock frequency. Featuring 67108864 words, it has a memory density of 1073741824 bit and operates at 1.8V. Ideal for applications requiring high-speed data processing and storage in electronic devices.
IS43TR16256B-125KBLI
IS43TR16256B-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH suitable for industrial temperature grades. This memory IC has a memory density of 4294967296 bit and is ideal for applications requiring high-speed data processing in compact electronic devices.
MT46H64M32LFBQ-48IT:C
Micron Technology's MT46H64M32LFBQ-48IT:C is a 64MX32 LPDDR1 DRAM with 67108864 words, operating at 208 MHz. It features a very thin profile, fine pitch grid array package and supports synchronous operation with self-refresh capability. Ideal for industrial applications requiring fast memory access and low power consumption.
W66CP2NQUAGJ
Winbond Electronics
Winbond Electronics LPDDR4 DRAM W66CP2NQUAGJ features 128MX32 organization, operates at up to 1869.1 MHz clock frequency, and has a memory density of 4294967296 bit. Ideal for applications requiring high-speed synchronous operation in compact devices like smartphones and tablets.
K4A8G165WC-BCTD
Samsung's K4A8G165WC-BCTD is a 512MX16 DDR4 DRAM with 1333 MHz clock frequency. Operating at 1.2V, it offers 8589934592 bit memory density and supports multi-bank page burst access mode. Ideal for applications requiring high-speed data processing in compact devices due to its thin profile and fine pitch package style.
MT40A1G16RC-062E:B
Micron Technology's MT40A1G16RC-062E:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in thin-profile devices.
MT48LC4M32B2B5-6AIT:L
Micron Technology's MT48LC4M32B2B5-6AIT:L is a 4MX32 SDRAM with 3.3V supply, operating at 166MHz clock frequency. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high-speed memory access in industrial environments.
M366S3253ETS-C7A
Samsung M366S3253ETS-C7A is a 32MX64 Synchronous DRAM with 3.3V supply, operating at 133MHz. Ideal for commercial applications, it offers self-refresh capability and a memory density of 2GB, featuring a max access time of 5.4ns for high-speed data processing.
MT48LC4M32B2P-6:G
Micron Technology's MT48LC4M32B2P-6:G is a 4MX32 SDRAM with 3.3V supply, operating at 166MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density in a small outline package.
MT41J64M16TW-093:J
MT41J64M16TW-093:J by Micron Technology is a DDR3 DRAM with 64MX16 organization, 1.5V nominal voltage, and operating temperature range of 0 to 85°C. It is commonly used in applications requiring synchronous operation and multi-bank page burst access mode.
MT41K256M16TW-107IT:P
Micron Technology's MT41K256M16TW-107IT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing speeds.
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W3H32M64E-533SBI
Mercury Systems
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B208;
White Electronic Designs
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;
W3H32M64E-533SBC
DDR2 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 208; Package Code: BGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
W3H32M64E-533SBM
DDR2 DRAM; Temperature Grade: MILITARY; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
W3H32M64E-400SBC
DDR2 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;
DDR2 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
DDR2 DRAM; Temperature Grade: MILITARY; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Self Refresh: YES;
W3H32M64E-667SBC
DDR2 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;
W3H32M64E-667SBI
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
W3H32M64E-533BM
DDR2 DRAM; Temperature Grade: MILITARY; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Memory Density: 2147483648 bit;
W3H32M64E-533BC
DDR2 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Self Refresh: YES;
W3H32M64EA-667SBC
DDR2 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Access Mode: FOUR BANK PAGE BURST;
W3H32M64E-667BI
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; No. of Words: 33554432 words;
W3H32M64E-533BI
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Access Mode: FOUR BANK PAGE BURST;
DDR2 DRAM; Temperature Grade: MILITARY; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Access Time: .65 ns;
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; No. of Ports: 1;
W3H32M64E-667SBM
DDR2 DRAM; Temperature Grade: MILITARY; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Form: BALL;
DDR2 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; No. of Functions: 1;
DDR2 DRAM; Temperature Grade: MILITARY; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Seated Height: 2.83 mm;
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