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MT48LC4M32B2TG-7IT:G

Micron Technology

MT48LC4M32B2TG-7IT:G by Micron Technology

Micron Technology's MT48LC4M32B2TG-7IT:G is a 4MX32 SDRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high-speed memory access in compact form factors.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 13,800 parts In-Stock

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Vyrian

USA . 1,090 parts In-Stock

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Digiode

USA . 70 parts In-Stock

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70

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Nova Conductors

Japan . 62 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 24 parts In-Stock

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24

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Connector Distribution Corp

USA . 17 parts In-Stock

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17

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Right Parts Inc.

USA . 17 parts In-Stock

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17

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QIE Inc.

USA . 14 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 12 parts In-Stock

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LWI Electronics Inc

India . 6 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 57 parts In-Stock

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$3.660

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57

$3.660

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Andel Nordic

Denmark . 6,349 parts In-Stock

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$4.050

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$3.888

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$3.888

6,349

$4.050

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$3.888

$3.888

Corohmni

South Africa . 414 parts In-Stock

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$4.182

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$4.182

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AZTECH Wire

Italy . 445 parts In-Stock

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$19.642

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445

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Semicontronic

India . 1,568 parts In-Stock

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$25.000

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$24.375

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$24.250

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Ampacity Inc.

Singapore . 1,562 parts In-Stock

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$29.000

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Continental Prestige Electronics

USA . 4,229 parts In-Stock

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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Corphita

USA . 1,476 parts In-Stock

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Argo Parts USA

USA . 1,044 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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S.R.D Solutions

India . 200 parts In-Stock

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Perfect Parts

USA . 67 parts In-Stock

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67

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Cyclops Electronics Ltd (Excess)

UK . 29 parts In-Stock

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Assy Fe

Spain . 12 parts In-Stock

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Overview

Upgrade your system with the reliable MT48LC4M32B2TG-7IT:G by Micron Technology, a leading manufacturer in the industry. This high-quality DRAM module offers unparalleled performance and efficiency, making it ideal for a wide range of applications. From gaming to data processing, this product delivers speed, reliability, and seamless operation. Trust Micron Technology to provide cutting-edge technology that enhances your experience and brings value to your projects. Choose excellence, choose Micron.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the internal components of the DRAM, ensuring durability and reliability.

Surface Mount: YES

Surface mount compatibility makes it easier to integrate this DRAM into various electronic devices and PCBs.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and synchronization, enhancing overall performance.

Nominal Supply Voltage: 3.3V

This voltage level is commonly used in many electronic systems, making it compatible with a wide range of devices.

Organization: 4MX32

With a high organization of 4MX32, this DRAM offers large memory capacity and fast data access.

Maximum Operating Temperature: 85 °C

The wide temperature range allows this DRAM to function reliably in various environments, including industrial settings.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making this DRAM efficient and effective for many applications.

Technical Specifications

DRAM MT48LC4M32B2TG-7IT:G attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.5 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G86

JESD-609 Code:

e0

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

MT48LC4M32B2TG-7IT:G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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