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MT48LC8M16A2TG-7EIT:G

Micron Technology

MT48LC8M16A2TG-7EIT:G by Micron Technology

Micron Technology's MT48LC8M16A2TG-7EIT:G is a 3.3V, 8MX16 Synchronous DRAM with 143 MHz clock frequency and -40 to 85°C operating range. It features 4-bank page burst access mode, ideal for industrial applications requiring high-speed memory performance.

Median Price

$11.540

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 11 parts In-Stock

1+ parts

$11.540

100+ parts

$8.650

1k+ parts

$7.500

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11

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$7.500

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Chip Stock

USA . 4,989 parts In-Stock

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Vyrian

USA . 3,244 parts In-Stock

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3,244

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Digiode

USA . 457 parts In-Stock

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457

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Carlin Systems, Inc.

USA . 37 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Connector Distribution Corp

USA . 2 parts In-Stock

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Right Parts Inc.

USA . 2 parts In-Stock

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Distributors (Availability)

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Andel Nordic

Denmark . 7,656 parts In-Stock

1+ parts

$4.271

100+ parts

-

1k+ parts

$4.101

10k+ parts

$4.101

7,656

$4.271

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$4.101

$4.101

Ampacity Inc.

Singapore . 391 parts In-Stock

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$6.000

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391

$6.000

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AZTECH Wire

Italy . 525 parts In-Stock

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$6.157

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Component Stockers USA

USA . 309 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 22,184 parts In-Stock

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Continental Prestige Electronics

USA . 2,022 parts In-Stock

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Argo Parts USA

USA . 831 parts In-Stock

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Corphita

USA . 803 parts In-Stock

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Bastille Electronics

Australia . 700 parts In-Stock

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Microchip USA

USA . 132 parts In-Stock

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Overview

Experience the superior quality of Micron Technology with the MT48LC8M16A2TG-7EIT:G DRAM module. This innovative product offers unmatched reliability and performance, making it ideal for a wide range of applications. With a compact design and advanced features like self-refresh mode and common input/output type, this memory module provides exceptional value to customers seeking high-speed data processing and seamless multitasking capabilities. Trust Micron Technology for cutting-edge technology that surpasses expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a sturdy and durable construction, ensuring reliability for long-term use.

Surface Mount: YES

Allows for easy installation and space-saving on PCBs, ideal for compact designs.

Package Shape: RECTANGULAR

Provides a standardized form factor for ease of integration into various systems.

Operating Mode: SYNCHRONOUS

Delivers high-speed data transfer capabilities, enhancing overall performance.

Self Refresh: YES

Enables power-saving functionality, prolonging battery life in portable devices.

Input/Output Type: COMMON

Offers compatibility with a wide range of systems and peripherals.

Nominal Supply Voltage / Vsup: 3.3V

Suitable voltage level for stable and efficient operation.

Power Supplies: 3.3V

Consistent power delivery for reliable performance.

No. of Terminals: 54

Sufficient connections for secure attachment and data transfer.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Space-efficient design for applications with limited board space.

Maximum Operating Temperature: 85 °C

Ensures reliable operation even in high-temperature environments.

Organization: 8MX16

Provides ample memory capacity for storing large amounts of data.

Output Characteristics: 3-STATE

Enables flexible data output options for versatile use cases.

Minimum Operating Temperature: -40 °C

Can withstand cold temperatures, suitable for various environments.

Terminal Finish: TIN LEAD

Offers good solderability and durability for long-lasting connections.

Terminal Position: DUAL

Allows for secure attachment and stable signal transmission.

Maximum Seated Height: 1.2 mm

Low-profile design for applications with height restrictions.

Maximum Clock Frequency (fCLK): 143 MHz

High-speed operation for quick data access and transfer.

Width: 10.16 mm

Compact size for space-efficient PCB layout.

Minimum Supply Voltage (Vsup): 3V

Supports reliable operation with a minimum voltage threshold.

Length: 22.22 mm

Standard length for easy integration into various systems.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications with demanding environmental conditions.

Access Mode: FOUR BANK PAGE BURST

Efficient data access method for optimized performance.

Technology: CMOS

Utilizes modern technology for enhanced power efficiency and performance.

Terminal Form: GULL WING

Allows for easy soldering and secure mechanical connections.

Maximum Supply Current: 330 mA

Ensures stable power delivery for consistent performance.

No. of Words: 8388608 words

Provides ample storage capacity for extensive data processing.

Sequential Burst Length: 1,2,4,8,FP

Supports flexible burst lengths for optimized data transfer.

Memory Width: 16

Ideal width for efficient data processing and storage.

Terminal Pitch: 0.8 mm

Standard pitch for secure connections in various systems.

No. of Words Code: 8M

Indicates the memory capacity for easy identification.

Maximum Supply Voltage (Vsup): 3.6V

Maximum voltage limit for safe and reliable operation.

Memory Density: 134217728 bit

High-density memory for storing a large amount of data.

Memory IC Type: SYNCHRONOUS DRAM

Utilizes synchronous DRAM technology for fast and efficient data access.

Maximum Standby Current: 0.002 Amp

Low standby current consumption for energy efficiency.

Refresh Cycles: 4096

Efficient memory refresh process for data integrity.

Interleaved Burst Length: 1,2,4,8

Enhanced data transfer efficiency with interleaved burst lengths.

Maximum Access Time: 5.4 ns

Quick access time for rapid data retrieval and processing.

Technical Specifications

DRAM MT48LC8M16A2TG-7EIT:G attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e0

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

330 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

MT48LC8M16A2TG-7EIT:G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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