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MT4KTF25664HZ-1G9P1

Micron Technology

MT4KTF25664HZ-1G9P1 by Micron Technology

Micron Technology's MT4KTF25664HZ-1G9P1 is a DDR3L DRAM MODULE with 256MX64 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and single bank page burst access mode. Ideal for commercial applications requiring high memory density and reliable performance in microelectronic assemblies.

Median Price

$65.500

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 80 parts In-Stock

1+ parts

$56.620

100+ parts

$52.580

1k+ parts

-

10k+ parts

-

80

$56.620

$52.580

-

-

Mouser Electronics

USA . 144 parts In-Stock

1+ parts

$64.870

100+ parts

$52.940

1k+ parts

-

10k+ parts

-

144

$64.870

$52.940

-

-

Arrow

USA . 30 parts In-Stock

1+ parts

$65.500

100+ parts

$47.960

1k+ parts

$47.470

10k+ parts

-

30

$65.500

$47.960

$47.470

-

DigiKey

USA . 171 parts In-Stock

1+ parts

$92.920

100+ parts

$78.783

1k+ parts

-

10k+ parts

-

171

$92.920

$78.783

-

-

Element14

Singapore . 80 parts In-Stock

1+ parts

$96.830

100+ parts

$84.090

1k+ parts

-

10k+ parts

-

80

$96.830

$84.090

-

-

Farnell

UK . 80 parts In-Stock

1+ parts

$112.620

100+ parts

$100.540

1k+ parts

-

10k+ parts

-

80

$112.620

$100.540

-

-

Verical

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$21.470

1k+ parts

-

10k+ parts

-

100

-

$21.470

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$51.207

100+ parts

-

1k+ parts

-

10k+ parts

-

600

$51.207

-

-

-

Digiode

USA . 807 parts In-Stock

1+ parts

$58.682

100+ parts

-

1k+ parts

-

10k+ parts

-

807

$58.682

-

-

-

Chip Stock

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,000

-

-

-

-

Vyrian

USA . 3,888 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,888

-

-

-

-

TME

Poland . 100 parts In-Stock

1+ parts

-

100+ parts

$34.732

1k+ parts

-

10k+ parts

-

100

-

$34.732

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 920 parts In-Stock

1+ parts

$3.508

100+ parts

-

1k+ parts

-

10k+ parts

-

920

$3.508

-

-

-

Aztec Data Supply Inc.

USA . 292 parts In-Stock

1+ parts

$5.210

100+ parts

-

1k+ parts

-

10k+ parts

-

292

$5.210

-

-

-

AZTECH Wire

Italy . 641 parts In-Stock

1+ parts

$8.345

100+ parts

-

1k+ parts

-

10k+ parts

-

641

$8.345

-

-

-

Semicontronic

India . 235 parts In-Stock

1+ parts

$36.100

100+ parts

$35.198

1k+ parts

$35.017

10k+ parts

-

235

$36.100

$35.198

$35.017

-

Ampacity Inc.

Singapore . 110 parts In-Stock

1+ parts

$36.100

100+ parts

-

1k+ parts

-

10k+ parts

-

110

$36.100

-

-

-

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$50.183

100+ parts

-

1k+ parts

$48.176

10k+ parts

-

2,000

$50.183

-

$48.176

-

Continental Prestige Electronics

USA . 262 parts In-Stock

1+ parts

$51.207

100+ parts

-

1k+ parts

-

10k+ parts

$50.183

262

$51.207

-

-

$50.183

Corphita

USA . 1,273 parts In-Stock

1+ parts

$55.593

100+ parts

-

1k+ parts

-

10k+ parts

-

1,273

$55.593

-

-

-

Component Stockers USA

USA . 392 parts In-Stock

1+ parts

$63.400

100+ parts

$47.850

1k+ parts

-

10k+ parts

-

392

$63.400

$47.850

-

-

Argo Parts USA

USA . 4,175 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,175

-

-

-

-

Overview

Unlock the power of next-generation memory technology with Micron Technology's MT4KTF25664HZ-1G9P1 DDR3L DRAM module. Designed for high-performance applications, this memory module offers seamless synchronous operation and self-refresh capabilities, ensuring reliability and efficiency. With a compact rectangular package style and a wide operating temperature range, this module is perfect for a variety of commercial-grade devices. Experience faster data processing and improved multitasking capabilities with Micron's cutting-edge memory solution. Elevate your product performance with Micron Technology.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape is common and easy to handle, making it suitable for various applications.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for synchronized data transfers, resulting in faster and more efficient performance.

Self Refresh: YES

Self-refresh capability helps in conserving power and maintaining data integrity during idle periods.

Nominal Supply Voltage (Vsup): 1.35V

Operating at 1.35V provides a good balance between performance and power efficiency.

No. of Terminals: 204

Having a sufficient number of terminals ensures proper connectivity and stability in the system.

Maximum Operating Temperature: 70°C

Being able to withstand up to 70°C makes it suitable for use in a variety of environments and conditions.

Organization: 256MX64

The organization of 256MX64 allows for a high memory capacity and efficient data storage.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and reliable operation for the DRAM module.

Memory IC Type: DDR3L DRAM MODULE

Being DDR3L ensures compatibility with various systems and provides decent memory performance for everyday tasks.

Technical Specifications

DRAM MT4KTF25664HZ-1G9P1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

JESD-30 Code:

R-XZMA-N204

Length:

67.6 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

204

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256MX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

260

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.6 mm

Terminal Position:

ZIG-ZAG

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.8 mm

Trade Compliance

MT4KTF25664HZ-1G9P1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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