Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words: 134217728 words;
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DRAM MT4KSF12864HZ-1G4XX attributes and parameters. Explore more DRAM devices from Micron Technology
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MT4KSF12864HZ-1G4XX Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
2N7002,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
1N4148
Terry Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;
LL4148
Taitron Components
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358DT
STMicroelectronics
LM358DT by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 9000 uV. It operates at a nominal voltage of 5V and has a min voltage gain of 25000. This amplifier is commonly used in applications requiring high precision and low power consumption.
1N4148WT
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
OPA2277UA/2K5E4
Texas Instruments
OPA2277UA/2K5E4 by Texas Instruments is a dual operational amplifier with low-offset and micropower features. It has a max input offset voltage of 100uV, nominal common mode reject ratio of 140dB, and min slew rate of 0.8V/us. Ideal for industrial applications requiring precise signal amplification in compact designs.
LM358D-T
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Excel (Suzhou) Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
Kec
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Itt Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM358M
Raytheon Semiconductor
LM358N
Motorola
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
SMBJ18CA
Changzhou Galaxy Century Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Onsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
M39029/58-360
Amphenol
CONNECTOR ACCESSORY; MIL Conformity: YES; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: MALE; Terminal Type: CRIMP; IEC Conformity: NO;
CDSOT23-SM712
Bourns
Bourns CDSOT23-SM712 is a bidirectional Transient Voltage Suppressor diode with 400W peak power dissipation and 20uA reverse current. Ideal for surge protection in applications requiring a max clamping voltage of 14V, such as IEC-61000-4-2 compliant systems. Operates b/w -55°C to 150°C with matte tin finish and Gull Wing terminals.
BSS138
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
CRG0805F10R
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
BSS138W-7-F
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
TC511000BFTL-70
Toshiba
Toshiba's TC511000BFTL-70 is a 1MX1 DRAM with 1048576-bit memory density. It operates at 5V, has FAST PAGE access mode with 70ns max access time. Ideal for applications requiring high-speed data storage in compact devices due to its small outline, thin profile package style.
K4T1G164QF-BCE6
Samsung
Samsung's K4T1G164QF-BCE6 is a 64MX16 DDR2 DRAM with 333 MHz clock frequency. Featuring 67108864 words, it has a memory density of 1073741824 bit and operates at 1.8V. Ideal for applications requiring high-speed data processing and storage in electronic devices.
MT48LC4M32B2P-6A:LTR
Micron Technology
Micron Technology's MT48LC4M32B2P-6A:LTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70°C. Featuring self-refresh and four-bank page burst access mode, it offers a memory density of 134217728 bits for commercial applications requiring fast access times of up to 5.4 ns.
NT5CC256M16CP-DII
Nanya Technology
NT5CC256M16CP-DII by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT53D512M32D2DS-046AAT:D
Micron Technology's MT53D512M32D2DS-046AAT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a wide temperature range from -40 to 105°C.
MT48LC16M16A2B4-7EIT:G
Micron Technology's MT48LC16M16A2B4-7EIT:G is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.
MT48LC8M16A2TG-7E
Micron Technology's MT48LC8M16A2TG-7E is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 143 MHz clock frequency. It features common I/O type, self-refresh mode, and 4096 refresh cycles. Ideal for commercial applications requiring fast memory access and low power consumption.
M366S1654ETS-C7A
Samsung's M366S1654ETS-C7A is a 16MX64 synchronous DRAM module with 3.3V supply, operating at up to 133 MHz clock frequency. Ideal for applications requiring high-speed memory access and data processing capabilities in commercial temperature environments.
MT48LC8M16A2TG-8E
Micron Technology's MT48LC8M16A2TG-8E is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 125 MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory performance in a compact thin profile package.
M392B2G70BM0-YH9
Samsung M392B2G70BM0-YH9 DRAM features 240 terminals, 1.35V supply, and 667MHz clock frequency. Ideal for servers due to its high memory density of 154618822656 bits and organization of 2GX72, offering fast data processing at temperatures ranging from 0 to 85°C.
MT40A1G8WE-083E:B
Micron Technology's MT40A1G8WE-083E:B is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in devices like servers and PCs.
M378B5673EH1-CH9
Samsung M378B5673EH1-CH9 DDR DRAM features 256MX64 organization, operates at 667 MHz with 3-STATE output. Suitable for high-performance computing applications due to its synchronous operation and self-refresh capability.
K4S641632H-TC75
Samsung's K4S641632H-TC75 is a 4MX16 DRAM with 3.3V supply, operating at 133MHz. It features synchronous operation, self-refresh capability, and a small outline package. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT40A1G16RC-062EIT:B
Micron Technology's MT40A1G16RC-062EIT:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
AS4C512M8D4-83BIN
Alliance Memory
Alliance Memory's AS4C512M8D4-83BIN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
IS42S16160J-7TLI
Integrated Silicon Solution
IS42S16160J-7TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. Ideal for industrial applications requiring fast access time of 5.4 ns and self-refresh capability in a small outline package.
W957A8MFYA5I
Winbond Electronics
EDO DRAM;
MT40A2G4SA-062E:E
Micron Technology's MT40A2G4SA-062E:E is a DDR4 DRAM with 2GX4 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
MT40A1G8SA-062E:R
Micron Technology's MT40A1G8SA-062E:R is a DDR4 DRAM with 1.2V supply voltage, 1GX8 organization, and 1073741824 words capacity. It operates synchronously with self-refresh capability and common I/O type. Ideal for applications requiring high memory density and fast data access in thin profile devices.
K4F6E3S4HM-MGCJ
Samsung Electro-mechanics
Samsung Electro-mechanics' K4F6E3S4HM-MGCJ is a LPDDR4 DRAM with 512MX32 organization, 17179869184 bit memory density, and operates at 1.1V. It features a GRID ARRAY package style and is suitable for applications requiring high-speed data processing in devices such as smartphones and tablets.
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MT4KTF25664HZ-1G9P1
DDR3L DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Ports: 1;
MT4KSF12864HZ-1G1XX
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 67.6 mm;
MT4KTF25664AZ-1G6XX
DDR3L DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 72;
MT4KTF12864HZ-1G4XX
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Ports: 1;
MT4KTF25664AZ-1G4XX
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
MT4KSF12864HZ-1G6XX
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.35;
MT4KTF25664AZ-1G9P1
DDR3L DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Width: 2.7 mm;
MT4KSF12864HIZ-1G4XX
DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Organization: 128MX64;
MT4KSF12864HZ-1G4D1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT4KTF12864HZ-1G6K1
MT4KTF12864HZ-1G6P1
DDR3L DRAM MODULE;
MT4KTF25664AZ-1G4E1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY;
MT4KSF12864HZ-1G6D1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Shape: RECTANGULAR; Access Mode: SINGLE BANK PAGE BURST; Nominal Supply Voltage / Vsup (V): 1.5;
MT4KTF25664AZ-1G6P1
MT4KSF12864HZ-1G1D1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit; Width: 30 mm;
MT4KTF12864HZ-1G6XX
DDR3L DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.575 V;
MT4KTF12864HZ-1G1XX
MT4KSF12864HIZ-1G1XX
DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;
MT4KSF12864HIZ-1G6XX
DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Surface Mount: NO;
Supply Digital Components
$106.00
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$7.29
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12,000 In-Stock
Total price ≈ $80,197.29
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