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EDD5108AGTA-5B-E

Elpida Memory

EDD5108AGTA-5B-E by Elpida Memory

Elpida Memory's EDD5108AGTA-5B-E is a 64MX8 DDR1 DRAM with 67108864 words, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast access times in commercial temperature grades.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

< 1k

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Chip Stock

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Vyrian

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Nova Conductors

Japan . 100 parts In-Stock

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Aztec Data Supply Inc.

USA . 322 parts In-Stock

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$3.700

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Corohmni

South Africa . 592 parts In-Stock

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AZTECH Wire

Italy . 667 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Bastille Electronics

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Overview

Discover the power of the EDD5108AGTA-5B-E by Elpida Memory, a leading manufacturer in the DRAM category. With its advanced technology and high-quality materials, this memory chip offers lightning-fast performance and reliability. Perfect for a wide range of applications, this product provides customers with seamless operation and optimal efficiency. Upgrade your device with the EDD5108AGTA-5B-E and experience the superior value, benefits, and advantages it brings to your system. Elevate your technology with Elpida Memory.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the components inside the package, ensuring reliable performance over time.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and making the overall design more efficient.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and coordinated data transfer, leading to improved system performance and reliability.

Nominal Supply Voltage / Vsup (V): 2.5

Stable supply voltage of 2.5V ensures consistent and reliable operation of the DRAM, reducing the chances of data corruption or failure.

Maximum Clock Frequency (fCLK): 200 MHz

High clock frequency of 200 MHz allows for fast data access and transfer speeds, enhancing overall system performance.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and reliability, making this DRAM a cost-effective and efficient choice for various applications.

Memory IC Type: DDR1 DRAM

DDR1 DRAM technology provides fast data transfer rates and high bandwidth, making it suitable for demanding applications such as gaming or multimedia processing.

Technical Specifications

DRAM EDD5108AGTA-5B-E attributes and parameters. Explore more DRAM devices from Elpida Memory

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

.7 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

2,4,8

JESD-30 Code:

R-PDSO-G66

JESD-609 Code:

e6

Length:

22.22 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

66

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP66,.46

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2.5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

2,4,8

Maximum Standby Current:

.005 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

300 mA

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10.16 mm

Trade Compliance

EDD5108AGTA-5B-E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

Manufacturer Highlights

Elpida Memory

Micron Memory Japan, K.K. is a Japanese subsidiary of Micron Technology. It was formerly known as Elpida Memory, Inc. established in 1999 that developed, designed, manufactured and sold dynamic random-access memory products. It was also a semiconductor foundry. About Micron Technology Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It is headquartered in Boise, Idaho. Its consumer products, including the Ballistix line of memory modules, are marketed under the Crucial brand.

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