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TC51V16405CST-60

Toshiba

TC51V16405CST-60 by Toshiba

Toshiba's TC51V16405CST-60 is a 4MX4 EDO DRAM with 16777216-bit memory density. Operating at 3.3V, it offers a max access time of 60ns and supports 4096 refresh cycles. Ideal for commercial applications requiring fast memory access in small outline packages.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

< 1k

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Legend Electronics Inc.

USA . 376 parts In-Stock

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Q Components

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Nova Conductors

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Ampacity Inc.

Singapore . 236 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Pacific Micro-Tech

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Overview

Discover the Toshiba TC51V16405CST-60, a top-quality EDO DRAM that delivers exceptional performance and reliability. Manufactured by Toshiba, a trusted name in the industry, this memory IC offers high memory density and fast access times, making it ideal for a wide range of applications. Whether you're looking to boost the speed and efficiency of your computer systems or enhance the performance of your electronic devices, the TC51V16405CST-60 is the perfect solution. Trust Toshiba to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your products with the superior quality and value of Toshiba's TC51V16405CST-60.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, which is ideal for portable devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto PCBs, saving space and making the product suitable for compact designs.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a low supply voltage of 3.3V results in lower power consumption, making the product energy-efficient.

Memory IC Type: EDO DRAM

The EDO DRAM technology used in this product provides faster and more efficient access to memory, improving overall performance.

Refresh Cycles: 4096

With a high number of refresh cycles, the product ensures data integrity and reliability over extended periods of use.

Technical Specifications

DRAM TC51V16405CST-60 attributes and parameters. Explore more DRAM devices from Toshiba

Specs

Maximum Access Time:

60 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G24

JESD-609 Code:

e0

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

24

No. of Words:

4194304 words

No. of Words Code:

4M

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX4

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP24/26,.36

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Self Refresh:

NO

Maximum Standby Current:

.0005 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

80 mA

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

TC51V16405CST-60 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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