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TC5117405CSJ-60

Toshiba

TC5117405CSJ-60 by Toshiba

Toshiba TC5117405CSJ-60 is a 4Mx4 EDO DRAM with 16777216-bit memory density. It operates in FAST PAGE mode with EDO technology and has a max access time of 60ns. Suitable for commercial applications requiring high-speed data processing in devices like computers and networking equipment.

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Nova Conductors

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Ampacity Inc.

Singapore . 399 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Enhance the performance of your electronic devices with the TC5117405CSJ-60 by Toshiba, a high-quality EDO DRAM memory IC that offers exceptional speed and reliability. Manufactured by Toshiba, a trusted name in the industry, this memory module is perfect for applications requiring fast page access and enhanced data transfer rates. With a small outline package and 3-state output characteristics, this memory IC provides seamless integration and optimal functionality. Upgrade your devices today with the TC5117405CSJ-60 and experience the benefits of superior performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection to the internal components of the DRAM, ensuring longevity and reliability.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation without the need for synchronization signals, making it versatile and suitable for various applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures stable and consistent power delivery to the DRAM, enabling efficient performance and data processing.

Output Characteristics: 3-STATE

The 3-STATE output characteristics provide flexibility in controlling the data output, allowing for high-speed data transfer and efficient communication with other components.

Technology: CMOS

The CMOS technology used in the DRAM offers low power consumption and high noise immunity, enhancing energy efficiency and reliable operation.

Technical Specifications

DRAM TC5117405CSJ-60 attributes and parameters. Explore more DRAM devices from Toshiba

Specs

Access Mode:

FAST PAGE WITH EDO

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-PDSO-J24

Length:

17.15 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

24

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX4

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.7 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.7 mm

Trade Compliance

TC5117405CSJ-60 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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