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TC511000AZ-70

Toshiba

TC511000AZ-70 by Toshiba

Toshiba's TC511000AZ-70 is a 1MX1 DRAM with 1048576-bit memory density. Operating at 5V, it offers a max access time of 70ns and refresh cycles of 512. Ideal for commercial applications requiring fast page access in a rectangular package style with through-hole terminals.

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Overview

Experience the superior quality and reliability of Toshiba with the TC511000AZ-70 Fast Page DRAM. Ideal for a wide range of applications, this memory IC offers fast access times and efficient performance. With a commercial temperature grade and a compact package style, this 1Mx1 organization memory chip delivers outstanding results in any operating mode. Trust Toshiba to provide you with cutting-edge technology and innovative solutions that enhance your projects and exceed your expectations. Unlock the potential of your devices with the TC511000AZ-70 and discover the difference that Toshiba can make for you.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, suitable for various applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for individual memory access without needing a clock signal, providing more flexibility in data retrieval.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with a wide range of systems and devices.

Technology: CMOS

The CMOS technology used in the product offers low power consumption, extending battery life in portable devices.

Memory IC Type: FAST PAGE DRAM

The use of fast page DRAM technology provides high-speed data storage and retrieval, ideal for applications requiring quick access to large amounts of data.

Refresh Cycles: 512

With 512 refresh cycles, the product ensures data integrity and reliability over extended periods of use.

Technical Specifications

DRAM TC511000AZ-70 attributes and parameters. Explore more DRAM devices from Toshiba

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

JESD-30 Code:

R-PZIP-T19

JESD-609 Code:

e0

Length:

25.8 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

19

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

ZIP

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Refresh Cycles:

512

Maximum Seated Height:

10.16 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

1.27 mm

Terminal Position:

ZIG-ZAG

Trade Compliance

TC511000AZ-70 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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