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MT46H128M16LFDD-48IT:C

Micron Technology

MT46H128M16LFDD-48IT:C by Micron Technology

Micron Technology's MT46H128M16LFDD-48IT:C is a 128MX16 LPDDR1 DRAM with 1.8V supply, operating at up to 208MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.

Median Price

$12.030

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 288 parts In-Stock

1+ parts

$9.350

100+ parts

$8.010

1k+ parts

-

10k+ parts

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288

$9.350

$8.010

-

-

Arrow

USA . 496 parts In-Stock

1+ parts

$11.557

100+ parts

$9.411

1k+ parts

$8.975

10k+ parts

-

496

$11.557

$9.411

$8.975

-

Mouser Electronics

USA . 3,726 parts In-Stock

1+ parts

$11.930

100+ parts

$9.840

1k+ parts

$9.340

10k+ parts

-

3,726

$11.930

$9.840

$9.340

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DigiKey

USA . 2,981 parts In-Stock

1+ parts

$12.130

100+ parts

$10.387

1k+ parts

$9.792

10k+ parts

-

2,981

$12.130

$10.387

$9.792

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Element14

Singapore . 863 parts In-Stock

1+ parts

$12.881

100+ parts

$10.264

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-

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863

$12.881

$10.264

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Verical

USA . 1,459 parts In-Stock

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-

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$17.392

1,459

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$17.392

WPG Americas

USA . 1,278 parts In-Stock

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-

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1,278

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 831 parts In-Stock

1+ parts

$9.405

100+ parts

-

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831

$9.405

-

-

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$11.106

100+ parts

-

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200

$11.106

-

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Vyrian

USA . 1,291 parts In-Stock

1+ parts

-

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1,291

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NAC Semi

USA . 946 parts In-Stock

1+ parts

-

100+ parts

$13.510

1k+ parts

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946

-

$13.510

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Component Sense

UK . 502 parts In-Stock

1+ parts

-

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502

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PC Components Company LLC

USA . 237 parts In-Stock

1+ parts

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237

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Bristol Electronics

USA . 237 parts In-Stock

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237

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Cyclops Electronics Ltd

UK . 22 parts In-Stock

1+ parts

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22

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Semi Source

USA . 11 parts In-Stock

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11

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LWI Electronics Inc

India . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,416 parts In-Stock

1+ parts

$3.100

100+ parts

-

1k+ parts

-

10k+ parts

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3,416

$3.100

-

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Corohmni

South Africa . 967 parts In-Stock

1+ parts

$5.315

100+ parts

-

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967

$5.315

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iBuyXS LLC

. 395 parts In-Stock

1+ parts

$7.250

100+ parts

-

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395

$7.250

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Ampacity Inc.

Singapore . 1,350 parts In-Stock

1+ parts

$8.210

100+ parts

-

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1,350

$8.210

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Corphita

USA . 433 parts In-Stock

1+ parts

$8.910

100+ parts

-

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433

$8.910

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Continental Prestige Electronics

USA . 6,936 parts In-Stock

1+ parts

$11.106

100+ parts

-

1k+ parts

-

10k+ parts

$10.884

6,936

$11.106

-

-

$10.884

Netroflash

USA . 500 parts In-Stock

1+ parts

$11.106

100+ parts

$10.884

1k+ parts

$10.551

10k+ parts

$10.329

500

$11.106

$10.884

$10.551

$10.329

Formix International (Excess)

India . 16,214 parts In-Stock

1+ parts

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16,214

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A-Z Elektronik GmbH

Germany . 10,183 parts In-Stock

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Infinite Electronics LLP (Excess)

. 5,257 parts In-Stock

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5,257

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S.R.D Solutions

India . 3,000 parts In-Stock

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3,000

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RC Electronics

USA . 2,676 parts In-Stock

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2,676

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Argo Parts USA

USA . 1,447 parts In-Stock

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1,447

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Kepictronics

USA . 480 parts In-Stock

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480

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BidChips

USA . 395 parts In-Stock

1+ parts

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100+ parts

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395

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Overview

Unleash the power of cutting-edge technology with Micron Technology's MT46H128M16LFDD-48IT:C DRAM module. Designed with precision and reliability in mind, this innovative memory solution offers seamless performance for a wide range of applications. From industrial to consumer electronics, this LPDDR1 DRAM delivers unmatched speed and efficiency, making it the ideal choice for your next project. Elevate your products with Micron's top-notch quality and experience a new level of performance like never before. Choose Micron - choose excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and protection to the DRAM package, making it suitable for rugged environments.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a consistent rate, improving overall performance and efficiency.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V helps in reducing power consumption and heat generation, leading to energy efficiency.

Memory IC Type: LPDDR1 DRAM

The LPDDR1 DRAM technology provides high-speed data transfer rates and low power consumption, making it ideal for mobile devices and other applications requiring efficient memory usage.

Technical Specifications

DRAM MT46H128M16LFDD-48IT:C attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

4.8 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

208 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

2,4,8,16

JESD-30 Code:

R-PBGA-B60

Length:

9 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

60

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA60,9X10,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1 mm

Self Refresh:

YES

Sequential Burst Length:

2,4,8,16

Maximum Standby Current:

.00001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

90 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8 mm

Trade Compliance

MT46H128M16LFDD-48IT:C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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