Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SYNCHRONOUS DRAM; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;
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DRAM AS4C32M16SB-6TINTR attributes and parameters. Explore more DRAM devices from Alliance Memory
JESD-609 Code:
Memory IC Type:
Moisture Sensitivity Level (MSL):
Terminal Finish:
AS4C32M16SB-6TINTR Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.
NDT2955
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;
1N4148WS
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NUP2105LT1G
Onsemi
NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.
LM555CN
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
Vishay Intertechnology
Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.
SMBJ18CA
Sensitron Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Gec Plessey Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
C1206C104M5RACTU
KEMET Corporation
KEMET C1206C104M5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±20% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
1N4148
Sinyork
RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;
ULN2803A
YOUTAI SEMICONDUCTOR CO LTD
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;
LL4148
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
LM78L05ACMX/NOPB
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
Secos
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SS14
Pro-an Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NE555D
NXP Semiconductors
SQUARE; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
B340A-13-F
Diodes Incorporated
B340A-13-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 3A max output current, and 0.5V max forward voltage. It is used for efficiency applications in electronics due to its small outline package and high operating temperature range of -55°C to 150°C.
Synsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
Surge Components
LM317T
Micro Commercial Components
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;
Rectron
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MT8HTF12864HDZ-667H1
Micron Technology
MT8HTF12864HDZ-667H1 by Micron Technology is a 128MX64 DDR DRAM MODULE with 400 MHz clock frequency. It operates at 1.8V, has 200 terminals, and supports DUAL BANK PAGE BURST access mode. Ideal for applications requiring high-speed synchronous memory with a memory density of 8589934592 bits.
MT48LC4M32B2F5-7IT:G
Micron Technology's MT48LC4M32B2F5-7IT:G is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access time, such as networking equipment and industrial automation systems.
MT46H32M16LFBF-6AAT:C
Micron Technology's MT46H32M16LFBF-6AAT:C is a 32MX16 LPDDR1 DRAM with 536870912-bit memory density. It operates at 166 MHz, has a very thin profile, and supports common I/O type. Ideal for industrial applications requiring fast access times and low standby current consumption.
AS4C32M16SB-6TINTR
Alliance Memory
M366S1654ETS-C7A
Samsung
Samsung's M366S1654ETS-C7A is a 16MX64 synchronous DRAM module with 3.3V supply, operating at up to 133 MHz clock frequency. Ideal for applications requiring high-speed memory access and data processing capabilities in commercial temperature environments.
W9751G6NB25I
Winbond Electronics
Winbond Electronics' W9751G6NB25I is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like networking equipment and industrial automation systems.
S27KL0642DPBHI020
Infineon Technologies
S27KL0642DPBHI020 by Infineon Technologies is an 8MX8 DRAM with a memory density of 67108864 bit. Operating at up to 200 MHz, it features synchronous mode and self-refresh capability. This HYPERRAM is suitable for applications requiring high-speed data storage in compact electronic devices.
MT46H32M16LFBF-6LIT:B
Micron Technology's MT46H32M16LFBF-6LIT:B is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features a 60-terminal grid array package, synchronous mode, and self-refresh capability. Ideal for industrial applications requiring fast access times and low power consumption.
W972GG6KB25I
Winbond Electronics' W972GG6KB25I is a 128MX16 DDR2 DRAM with 1.8V supply, operating at 400MHz clock frequency. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact form factors like mobile devices and embedded systems.
MT48LC2M32B2P-6AAIT:J
Micron Technology's MT48LC2M32B2P-6AAIT:J is a 3.3V, 2MX32 Synchronous DRAM with 67108864-bit memory density. Operating at -40 to 85 °C, it features a fast access time of 5.4 ns and is ideal for industrial applications requiring high-speed data processing.
IS42S16400J-6TL-TR
Integrated Silicon Solution
IS42S16400J-6TL-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX16 organization, 166 MHz clock frequency, and 67108864-bit memory density. Ideal for commercial applications requiring fast access times and low standby current consumption.
S27KL0642DPBHI023
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; Maximum Access Time: 35 ns;
K4S641632C-TC1L
Samsung's K4S641632C-TC1L is a 4MX16 DRAM with 3.3V supply, operating at 100MHz clock frequency. Ideal for commercial applications, it features synchronous operation, self-refresh capability, and a small outline package style.
MT41K128M16JT-125AAT:K
Micron Technology's MT41K128M16JT-125AAT:K is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package, operates at 1.35V, and has an industrial temperature grade. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
IS42S32400F-7TLI-TR
IS42S32400F-7TLI-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX32 organization, 143 MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high memory density and fast access times.
S70KL1282DPBHI020
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 166 MHz; Technology: CMOS;
MT47H128M16RT-25EAIT:C
Micron Technology's MT47H128M16RT-25EAIT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage and offers multi-bank page burst access mode. This industrial-grade memory IC has a thin profile grid array package suitable for various applications requiring high-speed synchronous operation.
KM48S8030AT-G10
Samsung's KM48S8030AT-G10 is an 8MX8 Synchronous DRAM with 67108864-bit memory density. It operates at a max clock frequency of 100 MHz and has a small outline, thin profile package style. Ideal for applications requiring high-speed data processing in commercial temperature environments.
TC514400AP-70
Toshiba
Toshiba's TC514400AP-70 is a 1MX4 DRAM with 1048576 words, operating at 5V. It features a max access time of 70ns and refresh cycles of 1024, suitable for commercial applications requiring fast page access in a CMOS technology package.
M471A1K43CB1-CRC
Samsung's M471A1K43CB1-CRC DDR DRAM Module features 1GX64 organization, 64-bit memory width, and 68719476736-bit memory density. Ideal for applications requiring synchronous operation, it has a nominal voltage of 1.2V and operates in a temperature range of 0-85°C.
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AS4C256M16D4-83BCN
Alliance Memory's AS4C256M16D4-83BCN is a 256MX16 DDR4 DRAM with 1200 MHz clock frequency, 95°C operating temp, and 1.2V supply voltage. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
AS4C256M16D4-83BIN
Alliance Memory's AS4C256M16D4-83BIN is a 256MX16 DDR4 DRAM with 1200 MHz clock frequency, 95°C operating temp, and 1.2V supply. Ideal for industrial applications requiring high memory density and fast data access in thin profile devices.
AS4C512M8D4-83BCN
Alliance Memory's AS4C512M8D4-83BCN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in compact devices.
AS4C256M16D4-75BCN
Alliance Memory's AS4C256M16D4-75BCN is a 256MX16 DDR4 DRAM with 1333 MHz clock frequency, 95°C max temp, and 1.2V nominal supply. Ideal for applications requiring high-speed synchronous operation in compact electronic devices.
AS4C512M8D4-83BIN
Alliance Memory's AS4C512M8D4-83BIN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
AS4C512M16D3LA-10BIN
DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;
AS4C512M8D4-75BCN
Alliance Memory's AS4C512M8D4-75BCN is a 512MX8 DDR4 DRAM with 1333 MHz clock frequency, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in compact electronic devices.
AS4C512M8D4-75BIN
Alliance Memory's AS4C512M8D4-75BIN is a DDR4 DRAM with 512MX8 organization, operating at 1333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
AS4C512M16D3L-12BCN
Alliance Memory's AS4C512M16D3L-12BCN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.
AS4C512M16D3LB-12BCN
Alliance Memory's AS4C512M16D3LB-12BCN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with low power consumption and common I/O type.
AS4C512M16D3LC-12BCN
DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Interleaved Burst Length: 4,8;
AS4C512M16D3LA-10BCN
Alliance Memory's AS4C512M16D3LA-10BCN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating at synchronous mode with self-refresh capability. Ideal for applications requiring high memory density and fast access speeds in a compact GRID ARRAY package.
AS4C16M16SA-7TCNTR
SYNCHRONOUS DRAM; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Length: 22.22 mm;
AS4C16M16SA-7TCN
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
AS4C256M16D3LC-12BIN
DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Supply Current: 235 mA;
AS4C8M16SA-6TIN
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Ports: 1;
AS4C16M16SA-6TINTR
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
AS4C256M16D3LC-12BINTR
AS4C16M16SA-6TIN
AS4C16M16SA-6TIN by Alliance Memory is a 16MX16 Synchronous DRAM with a clock frequency of 166 MHz. It operates at a voltage of 3.3V and has a temperature range of -40 to 85°C. This memory chip is commonly used in industrial applications requiring high-speed data storage and retrieval.
AS4C512M16D3L-12BIN
Alliance Memory's AS4C512M16D3L-12BIN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, operating at 1.35V. It features multi-bank page burst access mode and offers 8192 refresh cycles. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
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