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MT42C8256DJ-8

Micron Technology

MT42C8256DJ-8 by Micron Technology

Micron Technology's MT42C8256DJ-8 is a 256KX8 DRAM with 3-STATE output, operating at 5V. It features ASYNCHRONOUS mode, FAST PAGE WITH EDO access, and offers 80ns max access time. Ideal for video applications due to its high memory density of 2097152 bits and small outline package style.

Median Price

$15.000

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 45 parts In-Stock

1+ parts

$15.000

100+ parts

$9.000

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45

$15.000

$9.000

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Chip Stock

USA . 24,900 parts In-Stock

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24,900

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Vyrian

USA . 382 parts In-Stock

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382

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Digiode

USA . 285 parts In-Stock

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285

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Mil-Aero Solutions, Inc.

USA . 69 parts In-Stock

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69

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Prism Electronics

USA . 12 parts In-Stock

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12

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Q Components

USA . 9 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 452 parts In-Stock

1+ parts

$2.000

100+ parts

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452

$2.000

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Andel Nordic

Denmark . 2,652 parts In-Stock

1+ parts

$10.681

100+ parts

-

1k+ parts

$10.253

10k+ parts

$10.253

2,652

$10.681

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$10.253

$10.253

Argo Parts USA

USA . 3,359 parts In-Stock

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3,359

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Continental Prestige Electronics

USA . 1,484 parts In-Stock

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Corphita

USA . 1,440 parts In-Stock

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1,440

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Aranea Global

USA . 50 parts In-Stock

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50

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Perfect Parts

USA . 31 parts In-Stock

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Overview

Experience unmatched performance and reliability with the MT42C8256DJ-8 by Micron Technology. As a leading manufacturer in the industry, Micron delivers top-quality DRAM products that excel in various applications. This innovative memory module offers customers exceptional value and benefits, providing seamless operation and enhanced efficiency. Trust Micron Technology to elevate your technology experience and unlock endless possibilities with the MT42C8256DJ-8.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the DRAM, ensuring a longer lifespan.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for individual control of each memory access, providing flexibility and efficiency.

Nominal Supply Voltage / Vsup (V): 5

A stable supply voltage of 5V ensures reliable performance of the DRAM.

Memory IC Type: VIDEO DRAM

Specifically designed for video applications, this DRAM is optimized for high-speed video processing.

Maximum Access Time: 80 ns

With a fast access time of 80 nanoseconds, this DRAM can quickly retrieve data, making it suitable for demanding applications.

Technical Specifications

DRAM MT42C8256DJ-8 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FAST PAGE WITH EDO

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

JESD-30 Code:

R-PDSO-J40

JESD-609 Code:

e0

Length:

26.06 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

40

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ40,.44

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

512

Maximum Seated Height:

3.81 mm

Maximum Standby Current:

.01 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

195 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

10.21 mm

Trade Compliance

MT42C8256DJ-8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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