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M471A2K43BB1-CRC

Samsung

M471A2K43BB1-CRC by Samsung

Samsung M471A2K43BB1-CRC DDR DRAM Module features 2GX64 organization, 64-bit memory width, and 137.4 Gb memory density. Ideal for synchronous operation in applications requiring high-speed data processing and dual bank page burst access mode.

Median Price

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Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 941 parts In-Stock

1+ parts

$3.565

100+ parts

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941

$3.565

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$3.847

100+ parts

$3.847

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$3.847

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40

$3.847

$3.847

$3.847

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Ampacity Inc.

Singapore . 1,188 parts In-Stock

1+ parts

$6.000

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$6.000

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Argo Parts USA

USA . 2,428 parts In-Stock

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2,428

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Continental Prestige Electronics

USA . 1,876 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Enhance your device's performance with the Samsung M471A2K43BB1-CRC DDR DRAM MODULE. Designed for seamless operation in a variety of applications, this innovative memory module offers unparalleled quality and reliability. With Samsung's reputation as a leading manufacturer in the industry, you can trust that this product will deliver exceptional results. Upgrade your system today and experience improved speed, efficiency, and overall performance. Give your device the boost it deserves with the Samsung DDR DRAM MODULE.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape allows for efficient utilization of space in electronic devices, making it a practical choice for compact designs.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination between the memory system and the processor, leading to improved system performance.

Self Refresh: YES

Self-refresh capability helps in reducing power consumption by allowing the memory to refresh itself without relying on the processor, enhancing energy efficiency.

Nominal Supply Voltage / Vsup (V): 1.2

The low nominal supply voltage of 1.2V contributes to energy efficiency and lower power consumption, making it a cost-effective and eco-friendly option.

No. of Terminals: 260

The high number of terminals provides ample connectivity options and helps in ensuring stable and reliable data transfer within the system.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly style enables compact packaging and high-density integration, leading to space-saving benefits in electronic devices.

Organization: 2GX64

The organization of 2GX64 indicates a large capacity and efficient organization of memory cells, allowing for higher data storage and faster access speeds.

Terminal Position: DUAL

Dual terminal position provides redundant connections and increased reliability, ensuring stable data transmission and system performance.

Maximum Seated Height: 30.15 mm

The maximum seated height specification helps in determining the compatibility of the memory module with specific devices and ensures proper fitment.

Width: 3.7 mm

The compact width of 3.7mm allows for slim and sleek designs in electronic devices, enabling space-efficient integration.

Minimum Supply Voltage (Vsup): 1.14 V

The low minimum supply voltage of 1.14V ensures reliable performance even under varying voltage conditions, enhancing system stability.

Length: 69.6 mm

The length specification of 69.6mm helps in determining the physical dimensions of the memory module and ensures compatibility with the device's form factor.

Access Mode: DUAL BANK PAGE BURST

The dual bank page burst access mode enhances data access speed and efficiency by allowing simultaneous access to multiple memory banks, improving overall system performance.

Technology: CMOS

CMOS technology provides low power consumption, high speed, and reliable performance, making it a popular choice for memory modules in energy-efficient electronic devices.

Terminal Form: NO LEAD

The no-lead terminal form eliminates the need for lead-based soldering, making it environmentally friendly and compliant with RoHS regulations.

No. of Words: 2147483648 words

The large number of words indicates a high data storage capacity, allowing for efficient handling of large volumes of data and multitasking operations.

Memory Width: 64

The memory width of 64 bits enables high-speed data transfer and processing, enhancing system performance and responsiveness.

Terminal Pitch: 0.5 mm

The small terminal pitch of 0.5mm allows for fine-pitch mounting and compact design integration, facilitating space-saving benefits in electronic devices.

No. of Words Code: 2G

The 2G words code signifies a large memory capacity, enabling efficient storage and retrieval of a vast amount of data for complex applications and multitasking.

Maximum Supply Voltage (Vsup): 1.26 V

The maximum supply voltage of 1.26V ensures safe operation and protects the memory module from voltage spikes, enhancing system reliability and longevity.

Memory Density: 137438953472 bit

The high memory density of 137,438,953,472 bits indicates a large storage capacity, allowing for extensive data storage and efficient operation of memory-intensive applications.

Memory IC Type: DDR DRAM MODULE

The DDR DRAM module type offers high data transfer rates, low latency, and efficient memory management, making it suitable for demanding applications and high-performance systems.

Technical Specifications

DRAM M471A2K43BB1-CRC attributes and parameters. Explore more DRAM devices from Samsung

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XDMA-N260

Length:

69.6 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

260

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Organization:

2GX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

3.7 mm

Trade Compliance

M471A2K43BB1-CRC Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Samsung

Samsung Electronics Co., Ltd. engages in the consumer electronics, information technology and mobile communications, and device solutions businesses worldwide. The company offers smartphones, tablets, watches, and accessories; TVs, projectors, and sound devices; home appliances, including refrigerators, washing machines and dryers, vacuum cleaners, cooking appliances, dishwashers, air conditioners, and air purifiers; monitors, and memory and storage products; displays, and smart and LED signages; and other accessories. It also engages in technology, venture capital investments, cloud services, network devices installation and optimization, semiconductor equipment services, digital advertising platforms, marketing, consulting, connected services, logistics, financing, and software design activities; toll processing of display panels and semiconductors; development and sale of network solutions; manufactures semiconductors and food; provision of repair services for electronic devices and enterprise automation solutions; and development and supply of semiconductor process defect and quality control software. The company serves various industries, including education, retail, and finance, as well as government and corporate customers. Samsung Electronics Co., Ltd. was incorporated in 1969 and is based in Suwon-si, South Korea.

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