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MT48LC16M16A2BG-75IT:DTR

Micron Technology

MT48LC16M16A2BG-75IT:DTR by Micron Technology

Micron Technology's MT48LC16M16A2BG-75IT:DTR is a 16MX16 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a max access time of 5.4ns, and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory with low power consumption.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Chip Stock

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Vyrian

USA . 2,969 parts In-Stock

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Digiode

USA . 2,084 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Prism Electronics

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Ampacity Inc.

Singapore . 676 parts In-Stock

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$2.000

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Aztec Data Supply Inc.

USA . 4,888 parts In-Stock

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$2.833

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Corohmni

South Africa . 172 parts In-Stock

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AZTECH Wire

Italy . 771 parts In-Stock

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$12.697

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Continental Prestige Electronics

USA . 5,223 parts In-Stock

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Argo Parts USA

USA . 1,453 parts In-Stock

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Corphita

USA . 1,190 parts In-Stock

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Aranea Global

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Microchip USA

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Overview

Unlock the power of cutting-edge technology with Micron Technology's MT48LC16M16A2BG-75IT:DTR DRAM module. Designed for industrial-grade applications, this high-performance memory chip offers unparalleled reliability and speed. With a nominal supply voltage of 3.3V and self-refresh capabilities, this memory IC is perfect for a wide range of storage and processing needs. Trust in Micron's reputation for quality and innovation, and experience the difference with the MT48LC16M16A2BG-75IT:DTR today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and good protection for the DRAM chip inside.

Surface Mount: YES

Being surface mountable makes it easier to integrate this DRAM into circuit boards and helps save space.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures better timing coordination and overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is commonly used and provides a good balance between power consumption and performance.

No. of Terminals: 54

Having 54 terminals allows for efficient communication and data transfer between the DRAM and other components.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this DRAM can handle high-demand applications without overheating.

Memory Density: 268435456 bit

The high memory density of 268435456 bits allows for storing a large amount of data and running complex programs smoothly.

Technology: CMOS

CMOS technology provides low power consumption and high-speed performance, making this DRAM energy-efficient and fast.

Technical Specifications

DRAM MT48LC16M16A2BG-75IT:DTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B54

JESD-609 Code:

e1

Length:

14 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

MT48LC16M16A2BG-75IT:DTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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