Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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M12L2561616A-6TG2A by Elite Semiconductor is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a nominal voltage of 3.3V and has a max access time of 5.4 ns. This memory IC is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.
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The use of plastic/epoxy material in the package body ensures durability and protection for the DRAM, making it suitable for a variety of applications.
The surface mount feature allows for easy integration onto PCBs, simplifying the assembly process and making this DRAM a convenient choice for electronic devices.
With a single function, this DRAM is designed to efficiently perform memory storage tasks, providing reliable and focused performance.
The rectangular package shape enables efficient utilization of space, allowing for dense packaging and maximizing the capacity of memory modules.
The synchronous operating mode ensures efficient communication and data transfer between the DRAM and the processor, resulting in faster and more reliable memory access.
The self-refresh capability of this DRAM allows it to maintain data integrity even when not actively accessed, minimizing power consumption and extending the battery life of devices.
With a nominal supply voltage of 3.3V, this DRAM offers optimal performance and compatibility with a wide range of electronic systems.
The 54 terminals allow for secure connections and reliable data transmission, ensuring stable performance and efficient memory operation.
The small outline and thin profile package style provides a compact and space-saving solution, making it suitable for devices with limited space constraints.
With a maximum operating temperature of 70°C, this DRAM can withstand high temperature conditions, ensuring stable performance even in demanding environments.
The 16MX16 organization offers a high memory density, allowing for the storage of a large amount of data in a compact footprint, making it ideal for data-intensive applications.
The minimum operating temperature of 0°C ensures reliable performance even in harsh and low-temperature environments.
The dual terminal position provides secure and stable connections, ensuring efficient data transmission and reducing the risk of signal interference.
With a single port, this DRAM simplifies data access and makes it suitable for applications that do not require simultaneous access from multiple sources.
The maximum seated height of 1.2mm allows for flexibility in designing and integrating the DRAM into various devices with varying space constraints.
The compact width of 10.16mm ensures efficient space utilization and facilitates easy integration in space-constrained electronic systems.
Operating with a minimum supply voltage of 3V makes this DRAM compatible with various power systems, enhancing its versatility and usability.
With a length of 22.22mm, this DRAM offers a compact form factor while still providing ample memory capacity for efficient data storage.
The commercial temperature grade ensures compatibility and reliable performance across a wide range of standard temperature conditions, making it suitable for general-purpose applications.
The four bank page burst access mode allows for efficient retrieval of data from multiple memory banks, improving overall system performance and speed.
The use of CMOS (Complementary Metal-Oxide-Semiconductor) technology in this DRAM offers low power consumption, high performance, and excellent reliability, making it a superior choice for a wide range of applications.
The gull wing terminal form ensures secure and reliable connections, providing stable and efficient data transmission without the risk of signal loss or interference.
With 16,777,216 words of memory capacity, this DRAM offers ample storage for large amounts of data, making it suitable for memory-intensive applications.
The memory width of 16 bits allows for efficient data transfer, contributing to faster processing speeds and improved overall system performance.
The terminal pitch of 0.8mm enables precise and secure connections, ensuring reliable data transmission and facilitating ease of integration into electronic systems.
The 16M words code indicates a high memory capacity of 16 million words, offering extensive data storage capabilities for memory-intensive tasks.
Operating with a maximum supply voltage of 3.6V ensures compatibility with a wide range of power systems, ensuring reliable and stable performance.
With a memory density of 268,435,456 bits, this DRAM provides high-capacity storage capabilities, making it well-suited for memory-demanding applications.
Being a synchronous DRAM, this memory IC type offers fast and synchronized access to data, enhancing system performance and responsiveness.
With a maximum access time of 5.4 nanoseconds, this DRAM provides quick and efficient data access, contributing to the overall responsiveness and smooth operation of electronic systems.
DRAM M12L2561616A-6TG2A attributes and parameters. Explore more DRAM devices from Elite Semiconductor Microelectronics Technologyinc
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M12L2561616A-6TG2A Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.24
SB
8542.32.00.15
Elite Semiconductor Microelectronics Technology Inc. (ESMT) is a professional IC design company, founded in June 1998 in Taiwan's Hsinchu Science Industrial Park. The company's main business includes own brand IC product design, manufacturing, sales and technical services. ESMT successfully went public on Taiwan Stock Exchange, code 3006, in March 2002. Right from the beginning, ESMT’s mission has been to become a supplier of all types of memory products and technology. Our specialty DRAM products can be widely used in PC peripheral, home appliances, and consumer, communications systems, with various density and interface specifications(including SDRAM, DDR I / II / III and PSRAM, low-power Mobile DRAM, etc.); In the flash memory segment, ESMT also offers various density and interface type NOR and NAND Flash product families to satisfy customers’ need in developing variety of application system. In addition, due to the growing adoption of System in Package (SiP) in many applications, ESMT has also developed Known-Good-Die (KGD) and Multi-Chip Package (MCP) solutions of our memory products to support all requirements from customers.
SS14
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Sun Wai Electronic
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4148WS
Synsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Tak Cheong Electronics Holdings
LL4148
International Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SMBJ18CA
Concord Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;
BSS138
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .22 A; Package Shape: RECTANGULAR;
LM78L05ACMX/NOPB
Texas Instruments
LM78L05ACMX/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 0.1A. It operates b/w 0-125°C, has a dropout voltage of 1.6V, and can handle input voltages up to 30V making it ideal for various electronic applications requiring stable power supply.
KYOCERA AVX
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
Vishay Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
C0603C104K5RACTU
KEMET Corporation
KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
LM107H
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
FDV303N
Onsemi
FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
DP83848IVVX/NOPB
Texas Instruments DP83848IVVX/NOPB is a 3.3V Ethernet transceiver with 100000 Mbps data rate, suitable for industrial applications. It features CMOS technology, operates b/w -40 to 85 °C, and comes in a low profile flatpack package with matte tin finish.
LM317TG
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;
2N2222A
Boca Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;
2N7002
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
MT40A512M16JY-075E:BTR
Micron Technology
Micron Technology's MT40A512M16JY-075E:BTR is a DDR4 DRAM with 512MX16 organization, operating at 1333.33 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT47H64M16HR-25EIT:HTR
Micron Technology's MT47H64M16HR-25EIT:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access time of 0.4ns, and multi-bank page burst access mode.
M378B5673EH1-CF8
Samsung
Samsung M378B5673EH1-CF8 DDR DRAM Module has 256MX64 organization, operates at 533 MHz with 3-STATE output. Ideal for high-performance computing applications due to its synchronous operation and dual bank page burst access mode.
S70KL1282DPBHA023
Infineon Technologies
Infineon's S70KL1282DPBHA023 is a 16MX8 DRAM with 200 MHz clock frequency, operating at 3.6V max voltage. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for automotive applications due to AEC-Q100 screening level and very thin profile grid array package style.
MT41K512M16HA-107AIT:A
Micron Technology's MT41K512M16HA-107AIT:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in automotive or industrial settings.
MT40A256M16GE-075E:B
Micron Technology's MT40A256M16GE-075E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for applications requiring high-speed data processing in commercial-grade environments.
M393B1K70DH0-YH9
Samsung M393B1K70DH0-YH9 DDR DRAM Module features 1.35V supply, 667MHz clock frequency, and 72 memory width. Ideal for high-performance computing applications with a max operating temperature of 85°C and self-refresh capability.
KM48S8030AT-G10
Samsung's KM48S8030AT-G10 is an 8MX8 Synchronous DRAM with 67108864-bit memory density. It operates at a max clock frequency of 100 MHz and has a small outline, thin profile package style. Ideal for applications requiring high-speed data processing in commercial temperature environments.
TC514400AP-70
Toshiba
Toshiba's TC514400AP-70 is a 1MX4 DRAM with 1048576 words, operating at 5V. It features a max access time of 70ns and refresh cycles of 1024, suitable for commercial applications requiring fast page access in a CMOS technology package.
MT47H32M16NF-25E:H
Micron Technology's MT47H32M16NF-25E:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage, synchronous mode, and self-refresh capability. Ideal for applications requiring high-speed memory access in devices like computers and networking equipment.
MT41J64M16JT-15EAIT:G
Micron Technology's MT41J64M16JT-15EAIT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT61K512M32KPA-16:BTR
Micron Technology's MT61K512M32KPA-16:BTR is a GDDR6 DRAM with 512MX32 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
IS42S16400J-6TL-TR
Integrated Silicon Solution
IS42S16400J-6TL-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX16 organization, 166 MHz clock frequency, and 67108864-bit memory density. Ideal for commercial applications requiring fast access times and low standby current consumption.
AS4C512M16D3L-12BIN
Alliance Memory
Alliance Memory's AS4C512M16D3L-12BIN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, operating at 1.35V. It features multi-bank page burst access mode and offers 8192 refresh cycles. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
S70KL1282DPBHI020
Infineon's S70KL1282DPBHI020 is a 16MX8 DRAM with 166 MHz clock frequency, operating at 3.6V. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices due to its very thin profile grid array package style.
IS42S16400J-7BLI-TR
IS42S16400J-7BLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating temp. Ideal for industrial applications requiring high memory density and fast access times.
IS42S16320D-7BLI
IS42S16320D-7BLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with a max clock frequency of 143 MHz. It is commonly used in industrial applications and operates at a temperature range of -40 to 85 °C.
MT40A256M16GE-083E:B
Micron Technology's MT40A256M16GE-083E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed data processing applications in electronics.
MT40A1G16KH-062EAAT:E
Micron Technology's MT40A1G16KH-062EAAT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for automotive applications due to AEC-Q100 screening level and wide temperature range (-40 to 105°C).
MT46H128M16LFDD-48IT:CTR
Micron Technology's MT46H128M16LFDD-48IT:CTR is a 128MX16 LPDDR1 DRAM with 1.8V supply, operating at up to 208MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices like smartphones and tablets.
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M12L64164A-5BIG2Y
Elite Semiconductor Microelectronics Technologyinc
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Memory Width: 16;
M12L2561616A-6TIG2K
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
M12L2561616A-7BIG2A
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Technology: CMOS;
M12L2561616A-7TIG2K
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;
M12L2561616A-5TVG2A
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Length: 22.22 mm;
M12L2561616A-6BG2K
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Access Mode: FOUR BANK PAGE BURST;
M12L2561616A-7BG2A
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Terminal Position: BOTTOM;
M12L2561616A-7TG2A
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;
M12L2561616A-7TG2K
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
M12L2561616A-7TVAG2A
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Ports: 1;
M12L2561616A-5TG2S
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
M12L2561616A-6TG
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Width: 10.16 mm;
M12L2561616A-7TG
M12L2561616A-6TIG
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Memory Width: 16;
M12L2561616A-6TVAG2S
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G54;
M12L2561616A-5TIG2S
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;
M12L2561616A-7BIG2S
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B54;
M12L2561616A-6BG2S
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;
M12L2561616A-7BG2S
M12L2561616A-5BG2T
SYNCHRONOUS DRAM; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE; JESD-30 Code: R-PBGA-B54;
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