Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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M12L2561616A-6TG2A by Elite Semiconductor is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a nominal voltage of 3.3V and has a max access time of 5.4 ns. This memory IC is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.
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The use of plastic/epoxy material in the package body ensures durability and protection for the DRAM, making it suitable for a variety of applications.
The surface mount feature allows for easy integration onto PCBs, simplifying the assembly process and making this DRAM a convenient choice for electronic devices.
With a single function, this DRAM is designed to efficiently perform memory storage tasks, providing reliable and focused performance.
The rectangular package shape enables efficient utilization of space, allowing for dense packaging and maximizing the capacity of memory modules.
The synchronous operating mode ensures efficient communication and data transfer between the DRAM and the processor, resulting in faster and more reliable memory access.
The self-refresh capability of this DRAM allows it to maintain data integrity even when not actively accessed, minimizing power consumption and extending the battery life of devices.
With a nominal supply voltage of 3.3V, this DRAM offers optimal performance and compatibility with a wide range of electronic systems.
The 54 terminals allow for secure connections and reliable data transmission, ensuring stable performance and efficient memory operation.
The small outline and thin profile package style provides a compact and space-saving solution, making it suitable for devices with limited space constraints.
With a maximum operating temperature of 70°C, this DRAM can withstand high temperature conditions, ensuring stable performance even in demanding environments.
The 16MX16 organization offers a high memory density, allowing for the storage of a large amount of data in a compact footprint, making it ideal for data-intensive applications.
The minimum operating temperature of 0°C ensures reliable performance even in harsh and low-temperature environments.
The dual terminal position provides secure and stable connections, ensuring efficient data transmission and reducing the risk of signal interference.
With a single port, this DRAM simplifies data access and makes it suitable for applications that do not require simultaneous access from multiple sources.
The maximum seated height of 1.2mm allows for flexibility in designing and integrating the DRAM into various devices with varying space constraints.
The compact width of 10.16mm ensures efficient space utilization and facilitates easy integration in space-constrained electronic systems.
Operating with a minimum supply voltage of 3V makes this DRAM compatible with various power systems, enhancing its versatility and usability.
With a length of 22.22mm, this DRAM offers a compact form factor while still providing ample memory capacity for efficient data storage.
The commercial temperature grade ensures compatibility and reliable performance across a wide range of standard temperature conditions, making it suitable for general-purpose applications.
The four bank page burst access mode allows for efficient retrieval of data from multiple memory banks, improving overall system performance and speed.
The use of CMOS (Complementary Metal-Oxide-Semiconductor) technology in this DRAM offers low power consumption, high performance, and excellent reliability, making it a superior choice for a wide range of applications.
The gull wing terminal form ensures secure and reliable connections, providing stable and efficient data transmission without the risk of signal loss or interference.
With 16,777,216 words of memory capacity, this DRAM offers ample storage for large amounts of data, making it suitable for memory-intensive applications.
The memory width of 16 bits allows for efficient data transfer, contributing to faster processing speeds and improved overall system performance.
The terminal pitch of 0.8mm enables precise and secure connections, ensuring reliable data transmission and facilitating ease of integration into electronic systems.
The 16M words code indicates a high memory capacity of 16 million words, offering extensive data storage capabilities for memory-intensive tasks.
Operating with a maximum supply voltage of 3.6V ensures compatibility with a wide range of power systems, ensuring reliable and stable performance.
With a memory density of 268,435,456 bits, this DRAM provides high-capacity storage capabilities, making it well-suited for memory-demanding applications.
Being a synchronous DRAM, this memory IC type offers fast and synchronized access to data, enhancing system performance and responsiveness.
With a maximum access time of 5.4 nanoseconds, this DRAM provides quick and efficient data access, contributing to the overall responsiveness and smooth operation of electronic systems.
DRAM M12L2561616A-6TG2A attributes and parameters. Explore more DRAM devices from Elite Semiconductor Microelectronics Technologyinc
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M12L2561616A-6TG2A Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.24
SB
8542.32.00.15
Elite Semiconductor Microelectronics Technology Inc. (ESMT) is a professional IC design company, founded in June 1998 in Taiwan's Hsinchu Science Industrial Park. The company's main business includes own brand IC product design, manufacturing, sales and technical services. ESMT successfully went public on Taiwan Stock Exchange, code 3006, in March 2002. Right from the beginning, ESMT’s mission has been to become a supplier of all types of memory products and technology. Our specialty DRAM products can be widely used in PC peripheral, home appliances, and consumer, communications systems, with various density and interface specifications(including SDRAM, DDR I / II / III and PSRAM, low-power Mobile DRAM, etc.); In the flash memory segment, ESMT also offers various density and interface type NOR and NAND Flash product families to satisfy customers’ need in developing variety of application system. In addition, due to the growing adoption of System in Package (SiP) in many applications, ESMT has also developed Known-Good-Die (KGD) and Multi-Chip Package (MCP) solutions of our memory products to support all requirements from customers.
ERJ6ENF10R0V
Panasonic
Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.
LM358AN
Texas Instruments
LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.
LL4148
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
INA826AIDGKR
INA826AIDGKR by Texas Instruments is an instrumentation amplifier with 150uV max input offset voltage, 0.095uA max average bias current, and 1MHz nominal bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and high common mode rejection ratio of 120dB.
LM107H/883
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
1N4148WS
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
Crimson Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
ULN-2803A
Sprague Electric
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;
CSNF651
Honeywell Sensing And Control
CSNF651 by Honeywell Sensing And Control is an industrial-grade analog circuit with 3 terminals. It operates b/w -40 to 85°C, supporting supply voltages from -15V to 15V. Ideal for applications requiring a special shape rectangular package style and through-hole terminal form.
BAV99
Nexperia
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Synsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
ROHM
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM358N
Silicon Group
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;
Sangdest Microelectronics (Nanjing)
STM32H743ZIT6
STMicroelectronics
STM32H743ZIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications, offering features such as 21 timers, CAN and USB connectivity, and low power mode.
Leshan Radio
DP83848IVVX/NOPB
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;
BSS138
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
K4D263238I-UC50
Samsung
Samsung's K4D263238I-UC50 is a 4MX32 GDDR1 DRAM with 200 MHz clock frequency. Operating at 2.5V, it offers 3-state output and supports synchronous mode for common I/O applications. With a compact flatpack design, it suits commercial-grade systems requiring fast memory access and low standby current consumption.
MTA36ASF8G72PZ-2G9B2
Micron Technology
DRAMs;
MT40A1G16WBU-083E:B
Micron Technology's MT40A1G16WBU-083E:B is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
IS42S32800J-7TLI
Integrated Silicon Solution
IS42S32800J-7TLI by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 143 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
MT46V16M16P-5BXIT:M
Micron Technology's MT46V16M16P-5BXIT:M is a DDR1 DRAM with 16MX16 organization, 268435456 bit memory density, and 0.7 ns max access time. It operates synchronously at 2.6V and features self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices.
IS42S16400J-7BLI
IS42S16400J-7BLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, 143 MHz clock frequency, and 85°C max temp. Ideal for industrial applications requiring fast memory access, it features self-refresh mode, common I/O type, and thin profile grid array package.
S70KS1282GABHI020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Width: 8; Minimum Operating Temperature: -40 Cel;
IS42S16100H-7TLI
IS42S16100H-7TLI by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at up to 143 MHz clock frequency. Ideal for industrial applications, it features dual bank page burst access mode and offers a memory density of 16Mbit in a small outline package.
MT40A512M8SA-062EIT:F
Micron Technology's MT40A512M8SA-062EIT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access with its four-bank page burst access mode.
IS42S16800F-6TL-TR
IS42S16800F-6TL-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 166 MHz clock frequency. It operates at a voltage of 3.3V and has a memory density of 134217728 bits. Ideal for applications requiring high-speed data processing in commercial temperature environments.
S70KL1282DPBHA020
Infineon Technologies
Infineon's S70KL1282DPBHA020 is a 16MX8 DRAM with 200 MHz clock frequency, operating at 3.6V max voltage. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for automotive applications due to AEC-Q100 screening level and very thin profile grid array package style.
KM48V514BJ-6
Samsung's KM48V514BJ-6 is a 512Kx8 EDO DRAM with 3.3V supply, operating in asynchronous mode. It features 60ns access time, 1024 refresh cycles, and 70mA max supply current. Ideal for applications requiring fast page access and common I/O type in commercial temperature grade environments.
AS4C64M16D2A-25BCN
Alliance Memory
Alliance Memory's AS4C64M16D2A-25BCN is a 64MX16 DDR2 DRAM with 1.8V supply, operating from -40 to 85°C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.
IS43TR16256A-125KBLI
IS43TR16256A-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH and operates in industrial temperature grade range from -40 to 85 °C. Ideal for applications requiring high memory density and fast access times.
MT41J64M16JT-15:E
MT41J64M16JT-15:E by Micron Technology is a DDR3 DRAM with 64MX16 organization, 1.5V supply voltage, and 85°C max operating temp. Suitable for applications requiring synchronous operation, self-refresh capability, and multi-bank page burst access mode.
K4S281632O-LI75
Samsung's K4S281632O-LI75 is an 8MX16 DRAM with a memory density of 134217728 bit. It operates at a max clock frequency of 133 MHz and has a max access time of 5.4 ns. Ideal for industrial applications requiring high-speed data processing in compact devices.
MT48LC8M16A2TG-75IT:GTR
Micron Technology's MT48LC8M16A2TG-75IT:GTR is a 3.3V, 8MX16 Synchronous DRAM with 8388608 words and 134217728 bit memory density. Operating in industrial temperature range, it features self-refresh capability and offers fast access time of 5.4 ns. Ideal for applications requiring high-speed data processing and reliable memory performance.
K4A8G165WB-BCRC
Samsung's K4A8G165WB-BCRC is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in compact devices.
AS4C512M8D4-75BCN
Alliance Memory's AS4C512M8D4-75BCN is a 512MX8 DDR4 DRAM with 1333 MHz clock frequency, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in compact electronic devices.
MT53D512M32D2DS-046AAT:D
Micron Technology's MT53D512M32D2DS-046AAT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a wide temperature range from -40 to 105°C.
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M12L64164A-5BIG2Y
Elite Semiconductor Microelectronics Technologyinc
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Memory Width: 16;
M12L2561616A-6TIG2K
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
M12L2561616A-7BIG2A
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Technology: CMOS;
M12L2561616A-7TIG2K
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;
M12L2561616A-5TVG2A
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Length: 22.22 mm;
M12L2561616A-6BG2K
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Access Mode: FOUR BANK PAGE BURST;
M12L2561616A-7BG2A
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Terminal Position: BOTTOM;
M12L2561616A-7TG2A
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;
M12L2561616A-7TG2K
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
M12L2561616A-7TVAG2A
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Ports: 1;
M12L2561616A-5TG2S
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
M12L2561616A-6TG
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Width: 10.16 mm;
M12L2561616A-7TG
M12L2561616A-6TIG
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Memory Width: 16;
M12L2561616A-6TVAG2S
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G54;
M12L2561616A-5TIG2S
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;
M12L2561616A-7BIG2S
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B54;
M12L2561616A-6BG2S
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;
M12L2561616A-7BG2S
M12L2561616A-5BG2T
SYNCHRONOUS DRAM; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE; JESD-30 Code: R-PBGA-B54;
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