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MTA8ATF51264HZ-2G6B1

Micron Technology

MTA8ATF51264HZ-2G6B1 by Micron Technology

Micron Technology's MTA8ATF51264HZ-2G6B1 is a 512MX72 DDR DRAM MODULE with 38654705664-bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.

Median Price

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Lifecycle Status

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6

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1k+

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Vyrian

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S2 Components Inc.

USA . 500 parts In-Stock

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Digiode

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Nova Conductors

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Holdelec - ElecDif-Pro

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ACDS - Activité Composants Distribution Service

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Ampacity Inc.

Singapore . 687 parts In-Stock

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$9.000

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AZTECH Wire

Italy . 1,171 parts In-Stock

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Continental Prestige Electronics

USA . 4,208 parts In-Stock

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Argo Parts USA

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Corphita

USA . 1,627 parts In-Stock

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Aranea Global

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Overview

Unleash the power of seamless performance with the Micron Technology MTA8ATF51264HZ-2G6B1 DDR DRAM MODULE. Crafted by a trusted industry leader, this high-quality memory module offers unparalleled reliability and efficiency for a wide range of applications. Elevate your computing experience with lightning-fast speed and optimized data storage capabilities. Trust Micron Technology to deliver cutting-edge technology that enhances your productivity and unleashes your full potential. Upgrade to the MTA8ATF51264HZ-2G6B1 and experience the difference today.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient stacking and organization of multiple modules in a system, saving space and improving overall system performance.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred at a consistent and predictable rate, which is essential for high-performance computing applications.

Self Refresh: YES

The self-refresh feature allows the memory module to automatically refresh data without needing external commands, reducing the burden on the system processor and improving overall stability.

Nominal Supply Voltage / Vsup (V): 1.2

The 1.2V supply voltage offers a good balance between power efficiency and performance, making the memory module suitable for a wide range of computing applications.

No. of Terminals: 260

The high number of terminals allows for efficient data transfer and communication between the memory module and the system, enhancing overall system responsiveness.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this memory module can reliably perform in demanding thermal conditions, ensuring system stability under heavy workloads.

Organization: 512MX72

The 512MX72 organization indicates a high-density memory configuration, offering ample storage capacity for large datasets and complex computing tasks.

Technology: CMOS

CMOS technology provides low power consumption, high speed, and excellent noise immunity, making the memory module suitable for a wide range of computing applications.

Maximum Seated Height: 30.13 mm

The maximum seated height of 30.13mm allows for easy installation and compatibility with standard systems, ensuring hassle-free integration and maintenance.

No. of Words: 536870912 words

The large number of words indicates a high memory capacity, allowing for efficient storage and retrieval of data in demanding computing environments.

Technical Specifications

DRAM MTA8ATF51264HZ-2G6B1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XZMA-N260

Length:

69.6 mm

Memory Density:

38654705664 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

260

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512MX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

30.13 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

ZIG-ZAG

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.7 mm

Trade Compliance

MTA8ATF51264HZ-2G6B1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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