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MT48LC2M32B2P-7:G

Micron Technology

MT48LC2M32B2P-7:G by Micron Technology

Micron Technology's MT48LC2M32B2P-7:G is a 3.3V Synchronous DRAM with 2MX32 organization, offering 2097152 words memory density. It operates at up to 143 MHz clock frequency and has a max access time of 5.5 ns. Ideal for commercial applications requiring high-speed memory performance in compact form factors.

Median Price

$7.620

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 657 parts In-Stock

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$7.550

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$7.928

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$7.474

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$7.550

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Component Electronics Inc.

Canada . 5 parts In-Stock

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$7.690

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$5.770

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Vyrian

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Digiode

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LIBRA Elektronik GmbH

Germany . 807 parts In-Stock

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Resion

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Electronic Treasures

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Nova Conductors

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Bristol Electronics

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ComSIT Distribution GmbH

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ComSIT USA

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Connect4Technologies Inc.

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Euro-Tech

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Holdelec - ElecDif-Pro

France . 44 parts In-Stock

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J2 Sourcing AB

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Classic Components Corporation

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ACDS - Activité Composants Distribution Service

France . 22 parts In-Stock

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Semi Source

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EMSNET

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Prism Electronics

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Inventory MP

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 239 parts In-Stock

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$2.040

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239

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Andel Nordic

Denmark . 10,987 parts In-Stock

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$2.287

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$2.195

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Corohmni

South Africa . 718 parts In-Stock

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$3.364

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Ampacity Inc.

Singapore . 860 parts In-Stock

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AZTECH Wire

Italy . 324 parts In-Stock

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RC Electronics

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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Continental Prestige Electronics

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Metaverse IC Inc.

Canada . 1,934 parts In-Stock

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Argo Parts USA

USA . 1,235 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Corphita

USA . 928 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 916 parts In-Stock

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Futuretech Components

Singapore . 787 parts In-Stock

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Kepictronics

USA . 107 parts In-Stock

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Overview

Experience cutting-edge technology with the MT48LC2M32B2P-7:G by Micron Technology, a leading manufacturer in the DRAM category. This high-quality memory module offers exceptional performance and reliability for a wide range of applications. Whether you're a gamer looking to enhance your system's speed or a professional in need of reliable memory for demanding tasks, this product delivers unparalleled value with its advanced features and benefits. Upgrade your computing experience with Micron Technology's MT48LC2M32B2P-7:G and unlock a new level of efficiency and performance.

Feature Benefit Bullets

Package Body Material:

This material makes the package durable and cost-effective, making it a good choice for various applications.

Surface Mount:

This feature allows for easy installation on a circuit board, making it convenient for assembly processes.

Package Shape:

The rectangular shape of the package allows for efficient use of space on the circuit board, making it suitable for compact designs.

Operating Mode:

The synchronous operation ensures data is transferred at a consistent rate, improving overall performance of the product.

Self Refresh:

Self-refresh capability helps in reducing power consumption, making it energy-efficient and suitable for battery-powered devices.

Input/Output Type:

The common input/output type simplifies the design and connection process, making it versatile and easy to integrate into various systems.

Nominal Supply Voltage / Vsup (V):

The 3.3V supply voltage is a standard voltage level that is widely supported, making it compatible with many systems.

Power Supplies (V):

The 3.3V power supply ensures stable operation and compatibility with modern electronic systems.

No. of Terminals:

The high number of terminals allows for increased connectivity and functionality, making it suitable for complex applications.

Package Style (Meter):

The small outline and thin profile design with shrink pitch provides space-saving benefits while maintaining performance.

Maximum Operating Temperature:

With a maximum operating temperature of 70°C, this product can withstand higher temperatures, making it suitable for industrial environments.

Organization:

The 2MX32 organization offers high memory capacity and efficient data storage, making it ideal for applications requiring large amounts of data processing.

Output Characteristics:

The 3-state output allows for flexible data transmission, improving efficiency and compatibility with various devices.

Minimum Operating Temperature:

The minimum operating temperature of 0°C ensures reliable performance in a wide range of environmental conditions.

Terminal Finish:

The matte tin finish provides corrosion resistance and ensures reliable electrical connections, making it durable and long-lasting.

Terminal Position:

The dual terminal position enhances stability and reliability of connections, making it suitable for high-performance applications.

Maximum Seated Height:

The low seated height allows for compact designs and efficient use of space on the circuit board.

Maximum Clock Frequency (fCLK):

With a high clock frequency of 143 MHz, this product offers fast data processing speeds, making it suitable for high-performance applications.

Width:

The width of 10.16 mm allows for easy integration into various system designs, making it versatile and adaptable.

Minimum Supply Voltage (Vsup):

The minimum supply voltage of 3V ensures stable operation and compatibility with a wide range of systems.

Maximum Time At Peak Reflow Temperature (s):

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and reliability during assembly processes.

Peak Reflow Temperature °C:

With a peak reflow temperature of 260°C, this product can withstand high-temperature soldering processes, ensuring durability and reliability.

Length:

The length of 22.22 mm provides flexibility in design and allows for efficient placement on the circuit board.

Temperature Grade:

The commercial temperature grade ensures reliable performance in standard operating conditions, making it suitable for commercial applications.

Access Mode:

The four bank page burst access mode allows for efficient data retrieval and processing, improving overall system performance.

Technology:

The CMOS technology offers low power consumption and high-speed operation, making it energy-efficient and suitable for a wide range of applications.

Terminal Form:

The gull-wing terminal form provides secure connections and ease of soldering during assembly, ensuring reliability and durability.

Maximum Supply Current:

With a maximum supply current of 225 mA, this product can handle high current loads, making it suitable for power-intensive applications.

No. of Words:

The high number of words offers ample data storage capacity, making it ideal for applications requiring large memory storage.

Sequential Burst Length:

The sequential burst length options provide flexibility in data transfer and processing, improving system efficiency.

Memory Width:

The 32-bit memory width allows for efficient data handling and processing, making it suitable for high-performance systems.

Terminal Pitch:

The 0.5 mm terminal pitch provides precise connections and efficient signal transmission, ensuring reliability in data transfer.

No. of Words Code:

The 2M words code offers high memory capacity, making it suitable for data-intensive applications.

Maximum Supply Voltage (Vsup):

With a maximum supply voltage of 3.6V, this product offers flexibility in power supply options, making it adaptable to various systems.

Memory Density:

The high memory density of 67108864 bit provides ample data storage capacity for large-scale applications, ensuring efficient data processing.

Memory IC Type:

As a synchronous DRAM type, this product offers fast and synchronized data access, making it suitable for high-performance computing applications.

Maximum Standby Current:

With a maximum standby current of 0.002 Amp, this product is energy-efficient in standby mode, making it suitable for power-saving applications.

Refresh Cycles:

The 4096 refresh cycles ensure data integrity and reliability over extended periods of use, making it suitable for continuous operation.

Interleaved Burst Length:

The interleaved burst length options provide efficient data processing and transmission, improving overall system performance.

Maximum Access Time:

With a maximum access time of 5.5 ns, this product offers fast data retrieval speeds, making it suitable for high-speed applications.

Technical Specifications

DRAM MT48LC2M32B2P-7:G attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G86

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP86,.46,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

225 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC2M32B2P-7:G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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