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MT4C1M16C3DJ-6

Micron Technology

MT4C1M16C3DJ-6 by Micron Technology

Micron Technology's MT4C1M16C3DJ-6 is a 1MX16 DRAM with 1048576 words, 16-bit memory width, and 16777216 bit density. Operating at 5V, it has a max access time of 60ns and refresh cycles of 1024. Ideal for fast page applications in commercial temperature grades.

Median Price

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Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

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Chip Stock

USA . 12,800 parts In-Stock

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PC Components Company LLC

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Vyrian

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Digiode

USA . 378 parts In-Stock

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Prism Electronics

USA . 327 parts In-Stock

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327

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Flex Direct, LLC

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Fibra_Brandt Electronic GMBH

Germany . 240 parts In-Stock

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Pegasus Components GmbH

Germany . 173 parts In-Stock

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Bristol Electronics

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Sinequanon

UK . 90 parts In-Stock

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ComSIT USA

USA . 82 parts In-Stock

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ComSIT Distribution GmbH

Germany . 62 parts In-Stock

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J & M Industries LLC

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Q Components

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Nova Conductors

Japan . 42 parts In-Stock

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Lantek

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ECAB

Sweden . 13 parts In-Stock

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Tectiva GmbH

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Electronics Depot

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Sogenti Electronics

Canada . 6 parts In-Stock

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Component Electronics Inc.

Canada . 5 parts In-Stock

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Inland Empire Components Inc.

USA . 3 parts In-Stock

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North Shore Components

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Resion

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Andel Nordic

Denmark . 3,089 parts In-Stock

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$4.088

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$3.924

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$3.924

Ampacity Inc.

Singapore . 877 parts In-Stock

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$6.000

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Argo Parts USA

USA . 2,677 parts In-Stock

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Continental Prestige Electronics

USA . 2,365 parts In-Stock

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Corphita

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Perfect Parts

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Aranea Global

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Assy Fe

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Overview

Experience lightning-fast data processing with the MT4C1M16C3DJ-6 by Micron Technology, a top-tier manufacturer known for delivering high-quality DRAM products. Ideal for a wide range of applications, this memory module offers unparalleled reliability and performance. Elevate your computing experience with its impressive speed and efficiency, ensuring seamless multitasking and smooth operation. Trust in Micron's expertise to bring you cutting-edge technology that enhances productivity and maximizes value for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Operating Mode: ASYNCHRONOUS

Allows for independent operations of the memory cells, offering flexibility and speed in data access.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement that is easily compatible with most systems, reducing the need for additional adjustments.

No. of Words: 1048576 words

Offers a large capacity for storing data, making it suitable for applications requiring high memory storage.

Technology: CMOS

Utilizes low power consumption and offers high speed performance, making it an efficient choice for computing devices.

Refresh Cycles: 1024

Ensures data integrity by periodically refreshing the stored data, preventing loss or corruption of information.

Technical Specifications

DRAM MT4C1M16C3DJ-6 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-J42

JESD-609 Code:

e0

Length:

27.33 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

42

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ42,.44

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.76 mm

Self Refresh:

NO

Maximum Standby Current:

.0005 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

10.21 mm

Trade Compliance

MT4C1M16C3DJ-6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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