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MT4C4M4B1DW-7

Micron Technology

MT4C4M4B1DW-7 by Micron Technology

MT4C4M4B1DW-7 by Micron Technology is a 4MX4 DRAM with 3-STATE output, operating at 70°C. It features a memory density of 16Mbit and uses FAST PAGE technology. Ideal for applications requiring fast access times and high memory capacity in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 24,700 parts In-Stock

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24,700

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Vyrian

USA . 2,243 parts In-Stock

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2,243

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Digiode

USA . 516 parts In-Stock

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516

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Q Components

USA . 109 parts In-Stock

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109

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,582 parts In-Stock

1+ parts

$5.000

100+ parts

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1,582

$5.000

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Continental Prestige Electronics

USA . 4,229 parts In-Stock

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4,229

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Argo Parts USA

USA . 3,301 parts In-Stock

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3,301

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Corphita

USA . 774 parts In-Stock

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774

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Assy Fe

Spain . 25 parts In-Stock

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25

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Overview

Experience unparalleled performance and reliability with Micron Technology's MT4C4M4B1DW-7, a cutting-edge DRAM module designed to elevate your computing experience. Crafted from high-quality materials, this product boasts a sleek package body and versatile surface mount capabilities, making it perfect for a wide range of applications. With its common input/output type and 3-STATE output characteristics, the MT4C4M4B1DW-7 offers seamless functionality and optimal performance. Trust Micron Technology to deliver exceptional memory solutions that provide value, efficiency, and superior performance every time. Elevate your technology experience with Micron Technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Using plastic/epoxy as package body material makes the product lightweight and durable.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in data transfer, making the product suitable for various applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V provides stable performance and compatibility with standard power sources.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, the product can withstand moderate heat levels without compromising performance.

No. of Words: 4194304 words

Having a high number of words allows for storing large amounts of data efficiently, making it ideal for applications requiring extensive memory storage.

Technology: CMOS

Using CMOS technology ensures low power consumption and high speed operation, making the product energy-efficient and fast.

Maximum Access Time: 70 ns

A maximum access time of 70 nanoseconds ensures quick data retrieval, improving overall system performance.

Technical Specifications

DRAM MT4C4M4B1DW-7 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-J24

JESD-609 Code:

e0

Length:

18.44 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

24

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX4

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ24/28,.44

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.68 mm

Self Refresh:

NO

Maximum Standby Current:

.001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

110 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

10.21 mm

Trade Compliance

MT4C4M4B1DW-7 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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