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IS42S16160G-6TLI

Integrated Silicon Solution

IS42S16160G-6TLI by Integrated Silicon Solution

IS42S16160G-6TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 54 terminals, and supports common I/O type. Ideal for industrial applications requiring fast memory access and high density storage in a compact form factor.

Median Price

$9.110

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 34 parts In-Stock

1+ parts

$4.041

100+ parts

$3.882

1k+ parts

$3.598

10k+ parts

$3.472

34

$4.041

$3.882

$3.598

$3.472

Farnell

UK . 10 parts In-Stock

1+ parts

$9.110

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10

$9.110

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Element14

Singapore . 10 parts In-Stock

1+ parts

$12.040

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10

$12.040

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Chip Stock

USA . 22,854 parts In-Stock

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Cyclops Electronics Ltd

UK . 40 parts In-Stock

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40

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Prism Electronics

USA . 15 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 8 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 92 parts In-Stock

1+ parts

$3.909

100+ parts

$3.557

1k+ parts

$3.205

10k+ parts

-

92

$3.909

$3.557

$3.205

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Continental Prestige Electronics

USA . 216 parts In-Stock

1+ parts

$10.640

100+ parts

$6.380

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216

$10.640

$6.380

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Microchip USA

USA . 378 parts In-Stock

1+ parts

$19.350

100+ parts

$19.070

1k+ parts

$18.930

10k+ parts

$18.800

378

$19.350

$19.070

$18.930

$18.800

RC Electronics

USA . 12,600 parts In-Stock

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$6.170

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$5.820

10k+ parts

$5.700

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$5.700

Perfect Parts

USA . 945 parts In-Stock

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Kepictronics

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Overview

Enhance your electronic devices with the IS42S16160G-6TLI by Integrated Silicon Solution. Known for their top-notch quality and reliability, ISS offers a comprehensive range of DRAM products that cater to various applications. This synchronous memory module provides seamless operation and self-refresh capabilities, ensuring optimal performance. With a nominal supply voltage of 3.3V and a maximum clock frequency of 166MHz, this versatile component is perfect for industrial-grade projects. Upgrade your technology with ISS and experience the superior value and benefits that their products bring to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internals of the DRAM, making it a reliable choice for long-term use.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination within the DRAM system, enhancing overall performance efficiency.

Nominal Supply Voltage / Vsup (V): 3.3

The low supply voltage of 3.3V helps in reducing power consumption, making it energy-efficient.

Temperature Grade: INDUSTRIAL

With an industrial temperature grade, this DRAM is suitable for operating in a wide range of temperature conditions, ensuring stability and reliability.

Memory IC Type: SYNCHRONOUS DRAM

Being a synchronous DRAM, it offers high-speed data processing capabilities, making it ideal for applications requiring fast and efficient memory performance.

Technical Specifications

DRAM IS42S16160G-6TLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.004 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

160 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10.16 mm

Trade Compliance

IS42S16160G-6TLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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