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IS42S16160J-6BL

Integrated Silicon Solution

IS42S16160J-6BL by Integrated Silicon Solution

IS42S16160J-6BL by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V and is ideal for commercial applications requiring fast and reliable memory performance in a compact GRID ARRAY package style.

Median Price

$5.144

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 387 parts In-Stock

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$5.930

100+ parts

$5.230

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Arrow

USA . 623 parts In-Stock

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$4.358

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$4.358

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Verical

USA . 623 parts In-Stock

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623

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$3.101

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$3.101

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Chip Stock

USA . 5,498 parts In-Stock

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Vyrian

USA . 3,751 parts In-Stock

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Bristol Electronics

USA . 333 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

1+ parts

$3.101

100+ parts

-

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$2.946

10k+ parts

$2.884

50

$3.101

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$2.946

$2.884

AZTECH Wire

Italy . 503 parts In-Stock

1+ parts

$12.264

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503

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Perfect Parts

USA . 560 parts In-Stock

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Overview

Experience the cutting-edge technology of the IS42S16160J-6BL by Integrated Silicon Solution, a leading manufacturer in the industry. This high-quality DRAM product offers unparalleled performance, reliability, and efficiency for a wide range of applications. With its synchronous operation mode and self-refresh capabilities, this memory module delivers seamless data processing and optimal power management. Choose the IS42S16160J-6BL for your next project and unlock a world of possibilities with its advanced features and top-notch quality. Elevate your system's performance with Integrated Silicon Solution's innovative memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the internal components of the DRAM, ensuring long-lasting performance.

Surface Mount: YES

Being surface mountable makes installation of this DRAM easier and more convenient, especially in compact electronic devices.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures efficient and synchronized data transfer, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3 V offers a good balance between power consumption and performance, making it suitable for a wide range of applications.

No. of Terminals: 54

Having 54 terminals allows for proper connectivity and integration with other components, ensuring seamless operation.

Technical Specifications

DRAM IS42S16160J-6BL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

JESD-30 Code:

S-PBGA-B54

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

IS42S16160J-6BL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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