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AS4C256M16D3LC-12BCNTR

Alliance Memory

AS4C256M16D3LC-12BCNTR by Alliance Memory

Alliance Memory's AS4C256M16D3LC-12BCNTR is a 256MX16 DDR3L DRAM with a max clock frequency of 800 MHz. It operates in synchronous mode and has a self-refresh feature. This memory module is commonly used in applications requiring high-speed data storage and retrieval.

Median Price

$25.670

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 10 parts In-Stock

1+ parts

$12.750

100+ parts

$10.930

1k+ parts

$10.180

10k+ parts

$9.700

10

$12.750

$10.930

$10.180

$9.700

DigiKey

USA . 2,169 parts In-Stock

1+ parts

$38.590

100+ parts

$32.850

1k+ parts

$31.754

10k+ parts

$29.141

2,169

$38.590

$32.850

$31.754

$29.141

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 66 parts In-Stock

1+ parts

$8.325

100+ parts

-

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66

$8.325

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Kruse

Germany . 48,000 parts In-Stock

1+ parts

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48,000

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Kruse Electronics AG

Switzerland . 25,000 parts In-Stock

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25,000

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ARCO, INC.

USA . 22,500 parts In-Stock

1+ parts

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22,500

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VNN

France . 3,273 parts In-Stock

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3,273

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NAC Semi

USA . 2,500 parts In-Stock

1+ parts

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$11.630

2,500

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$11.630

Vyrian

USA . 1,961 parts In-Stock

1+ parts

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1,961

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 50 parts In-Stock

1+ parts

$8.325

100+ parts

$8.158

1k+ parts

-

10k+ parts

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50

$8.325

$8.158

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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5,000

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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2,500

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Overview

Experience exceptional performance and reliability with the AS4C256M16D3LC-12BCNTR by Alliance Memory. As a leading manufacturer, Alliance Memory delivers top-quality DRAM products that meet the highest industry standards. This DDR3L DRAM offers customers incredible value, providing fast data access and efficient power consumption. Whether you're building high-performance computing systems or designing advanced networking solutions, this memory module is perfect for a wide range of applications. Trust Alliance Memory to enhance your projects with their cutting-edge technology and unparalleled expertise.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product is made with a durable plastic/epoxy material, ensuring its longevity and resistance to various environmental factors.

Surface Mount: YES

With a surface mount capability, this product can easily be mounted onto circuit boards, making it convenient for integration into electronic devices.

No. of Functions: 1

This product incorporates a single function, simplifying its usage and reducing complexity.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient utilization of space in electronic designs, making it suitable for compact devices.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise and coordinated data transfers, enhancing overall system performance.

Self Refresh: YES

The self-refresh feature enables the product to maintain data integrity during periods of low activity, eliminating the need for constant power consumption.

Input/Output Type: COMMON

With a common input/output type, this product is compatible with a wide range of electronic systems, increasing its versatility.

Nominal Supply Voltage / Vsup (V): 1.35

The nominal supply voltage of 1.35V indicates that this product operates at an optimal level of power efficiency.

No. of Terminals: 96

With 96 terminals, this product offers sufficient connectivity options for seamless integration within electronic circuits.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array, thin profile, and fine pitch package style optimizes space utilization while providing reliable and efficient connections.

Maximum Operating Temperature: 95 °C

Able to withstand temperatures up to 95°C, this product is suitable for applications in various environments.

Organization: 256MX16

The organization of 256MX16 signifies a high memory capacity, providing ample storage for data-intensive applications.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for efficient control and management of data flow within the system.

Minimum Operating Temperature: 0 °C

This product can safely operate even in low-temperature environments, enhancing its versatility and reliability.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin silver copper ensures excellent conductivity and resistance to corrosion, promoting reliable connections.

Terminal Position: BOTTOM

The bottom terminal position simplifies the integration process and ensures convenient accessibility in electronic designs.

No. of Ports: 1

With one port, this product offers a straightforward interface for data transmission and reception.

Maximum Seated Height: 1.2 mm

The maximum seated height of 1.2 mm allows for compatibility with compact electronic devices and optimized space utilization.

Maximum Clock Frequency (fCLK): 800 MHz

Operating at a clock frequency of 800 MHz, this product delivers fast and efficient data processing capabilities.

Width: 7.5 mm

The width of 7.5 mm ensures compatibility with various electronic designs, accommodating space-constrained devices.

Minimum Supply Voltage (Vsup): 1.283 V

The minimum supply voltage requirement of 1.283V enables compatibility with a wide range of power sources.

Maximum Time At Peak Reflow Temperature (s): 30

This product can withstand peak reflow temperatures for up to 30 seconds, ensuring reliability during manufacturing processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this product can withstand stringent manufacturing requirements.

Length: 13.5 mm

The length of 13.5 mm offers compatibility with various electronic designs, ensuring flexibility in product integration.

Access Mode: MULTI BANK PAGE BURST

The multi-bank page burst access mode enables efficient retrieval and storage of data in a multitasking environment.

Technology: CMOS

Based on CMOS technology, this product offers low power consumption, high-speed performance, and compatibility with modern electronic systems.

Terminal Form: BALL

With a ball terminal form, this product ensures reliable and secure connections within electronic circuits.

Maximum Supply Current: 235 mA

The maximum supply current requirement of 235 mA ensures efficient power consumption, making it suitable for energy-conscious devices.

No. of Words: 268435456 words

This product provides a vast number of words, offering substantial memory capacity for data-intensive applications.

Sequential Burst Length: 4,8

The sequential burst length of 4,8 allows for efficient data transfer and management within the system.

Memory Width: 16

With a memory width of 16, this product offers compatibility with data-intensive operations, enhancing overall efficiency.

Terminal Pitch: 0.8 mm

The terminal pitch of 0.8 mm ensures compatibility with various electronic designs, facilitating easy integration.

No. of Words Code: 256M

The 256M word code indicates a significant memory capacity, suitable for storing large amounts of data.

Moisture Sensitivity Level (MSL): 3

With an MSL of 3, this product exhibits moderate moisture sensitivity, allowing for standard handling and storage procedures.

Maximum Supply Voltage (Vsup): 1.45 V

With a maximum supply voltage of 1.45V, this product offers flexibility and compatibility with various power sources.

Memory Density: 4294967296 bit

The memory density of 4294967296 bit represents a high-capacity storage solution, accommodating complex data requirements.

Memory IC Type: DDR3L DRAM

This product utilizes DDR3L DRAM technology, providing high-performance memory capabilities for demanding applications.

Maximum Standby Current: 0.008 Amp

With a maximum standby current of 0.008 Amp, this product offers energy efficiency by consuming minimal power during idle periods.

Refresh Cycles: 8192

The refresh cycle of 8192 ensures data integrity and reliability, supporting continuous and error-free operation.

Interleaved Burst Length: 4,8

The interleaved burst length of 4,8 optimizes data transfer efficiency and management within the system.

Technical Specifications

DRAM AS4C256M16D3LC-12BCNTR attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Clock Frequency (fCLK):

800 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

JESD-609 Code:

e1

Length:

13.5 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.008 Amp

Maximum Supply Current:

235 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.5 mm

Trade Compliance

AS4C256M16D3LC-12BCNTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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