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TM124BBJ32U-60L

Texas Instruments

TM124BBJ32U-60L by Texas Instruments

TM124BBJ32U-60L by Texas Instruments is a 1MX32 DRAM module with 1048576 words and memory width of 32. Operating at 5V, it offers fast page access mode with a max access time of 60ns. Ideal for commercial applications requiring high-speed memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,811 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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8,811

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-

-

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Digiode

USA . 932 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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932

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,478 parts In-Stock

1+ parts

$2.741

100+ parts

-

1k+ parts

$3.226

10k+ parts

-

1,478

$2.741

-

$3.226

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IDEA Electronic Components Group

UK . 1,902 parts In-Stock

1+ parts

$3.080

100+ parts

-

1k+ parts

$2.772

10k+ parts

-

1,902

$3.080

-

$2.772

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ChromeModa Solutions

Germany . 1,482 parts In-Stock

1+ parts

$3.080

100+ parts

$2.526

1k+ parts

-

10k+ parts

-

1,482

$3.080

$2.526

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-

AZTECH Wire

Italy . 476 parts In-Stock

1+ parts

$4.972

100+ parts

-

1k+ parts

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10k+ parts

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476

$4.972

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One Stop Electronics

USA . 395 parts In-Stock

1+ parts

$24.000

100+ parts

-

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10k+ parts

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395

$24.000

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DigiPath Technology Company

USA . 925 parts In-Stock

1+ parts

-

100+ parts

$2.777

1k+ parts

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10k+ parts

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925

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$2.777

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Corphita

USA . 776 parts In-Stock

1+ parts

-

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776

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Overview

Upgrade your system with the Texas Instruments TM124BBJ32U-60L DRAM module, designed for fast and reliable performance. With a reputation for high-quality products, Texas Instruments delivers cutting-edge technology that ensures seamless operation in various applications. Experience the benefits of increased memory density, fast access times, and efficient data processing with this versatile module. Trust Texas Instruments to provide superior products that meet your needs and exceed your expectations. Elevate your system's performance with the TM124BBJ32U-60L today!

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape allows for easy installation and integration into various electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient data processing without the need for a synchronized clock signal.

Nominal Supply Voltage: 5V

The 5V supply voltage provides stable power to the DRAM module for reliable performance.

Package Style: MICROELECTRONIC ASSEMBLY

The microelectronic assembly package style ensures compact size and high integration for space-constrained applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this DRAM module can withstand high heat environments without compromising performance.

Organization: 1MX32

The 1MX32 organization offers a high memory capacity of 32 bits per word, making it suitable for large data processing tasks.

Technology: CMOS

The CMOS technology used in this DRAM module ensures low power consumption and high-speed operation for efficient data storage and retrieval.

Maximum Access Time: 60 ns

The maximum access time of 60 ns ensures fast data access and processing, making this DRAM module ideal for high-performance computing applications.

Technical Specifications

DRAM TM124BBJ32U-60L attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-XSMA-N72

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX32

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

SINGLE

Trade Compliance

TM124BBJ32U-60L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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