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TM124BBJ32U-80L

Texas Instruments

TM124BBJ32U-80L by Texas Instruments

TM124BBJ32U-80L by Texas Instruments is a 1MX32 DRAM module with 1048576 words and memory width of 32 bits. Operating at 5V, it offers fast page access mode with max access time of 80ns. Ideal for commercial applications requiring high-speed memory solutions.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,703 parts In-Stock

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Digiode

USA . 238 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 746 parts In-Stock

1+ parts

$3.627

100+ parts

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$4.140

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746

$3.627

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$4.140

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ChromeModa Solutions

Germany . 5,475 parts In-Stock

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$4.075

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$3.342

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$4.075

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IDEA Electronic Components Group

UK . 2,327 parts In-Stock

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$4.075

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$3.668

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One Stop Electronics

USA . 378 parts In-Stock

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$17.000

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378

$17.000

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AZTECH Wire

Italy . 323 parts In-Stock

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$17.619

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323

$17.619

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Corphita

USA . 2,972 parts In-Stock

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DigiPath Technology Company

USA . 1,380 parts In-Stock

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$3.674

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$3.674

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Overview

Experience the unparalleled quality and reliability of Texas Instruments with the TM124BBJ32U-80L DRAM module. Designed for fast page access in a wide range of applications, this product offers customers exceptional value and benefits. With a memory density of 33554432 bits and a memory width of 32, this module is perfect for high-performance computing tasks. Trust Texas Instruments to deliver superior technology and performance for all your memory needs.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of space and easy integration into a variety of electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to each memory location, increasing overall system speed and performance.

Nominal Supply Voltage / Vsup (V): 5

Operating at a voltage of 5V ensures compatibility with a wide range of electronic systems and provides stable performance.

No. of Terminals: 72

Having 72 terminals allows for efficient communication and data transfer between the memory module and other components in the system.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

The microelectronic assembly package style is compact and durable, making it suitable for use in small form factor devices and rugged environments.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can reliably function in a variety of environmental conditions without overheating.

Organization: 1MX32

The 1MX32 organization provides a high memory capacity and data width, making it ideal for applications that require large amounts of data storage and fast access speeds.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0°C, this product can operate efficiently in a variety of temperature conditions, ensuring reliability and stability.

Terminal Position: SINGLE

A single terminal position simplifies installation and connectivity, making it easier to integrate this memory module into different systems.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage of 4.5V ensures that the memory module can operate reliably even when the voltage supply fluctuates slightly.

Temperature Grade: COMMERCIAL

Designed for commercial use, this memory module is suitable for a wide range of applications in various industries, offering consistent performance and durability.

Access Mode: FAST PAGE

Fast page access mode allows for quick and efficient retrieval of data, improving overall system responsiveness and performance.

Technology: CMOS

Utilizing CMOS technology offers low power consumption, high speed, and compatibility with a wide range of systems, making this product energy-efficient and reliable.

Terminal Form: NO LEAD

The no-lead terminal form provides a secure and reliable connection, reducing the risk of signal loss or damage during installation and operation.

No. of Words: 1048576 words

With a high number of words, this memory module can store a large volume of data, making it suitable for memory-intensive applications and tasks.

Memory Width: 32

A memory width of 32 bits allows for efficient data processing and transfer, enhancing system performance and speed.

No. of Words Code: 1M

The code for 1M words indicates a high memory capacity, enabling this memory module to handle large amounts of data and information.

Maximum Supply Voltage (Vsup): 5.5 V

With a maximum supply voltage of 5.5V, this memory module has a safety margin for voltage fluctuations, ensuring stable operation and data retention.

Memory Density: 33554432 bit

The high memory density of 33554432 bits allows this memory module to store and retrieve large volumes of data quickly and efficiently, enhancing system performance.

Memory IC Type: FAST PAGE DRAM MODULE

The fast page DRAM module type offers high-speed data access and retrieval, making it suitable for applications that require quick data processing and response times.

Maximum Access Time: 80 ns

With a maximum access time of 80 nanoseconds, this memory module can quickly retrieve data when needed, reducing latency and improving overall system performance.

Technical Specifications

DRAM TM124BBJ32U-80L attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-XSMA-N72

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX32

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

SINGLE

Trade Compliance

TM124BBJ32U-80L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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