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TM124BBK32-70

Texas Instruments

TM124BBK32-70 by Texas Instruments

TM124BBK32-70 by Texas Instruments is a 1MX32 DRAM module with 32-bit memory width and 33554432-bit density. Operating at 5V, it features an access time of 70ns and refresh cycles of 1024. Ideal for applications requiring fast page access in commercial temperature grades.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,189 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,189

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Digiode

USA . 3,871 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3,871

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MRC Electronics

USA . 56 parts In-Stock

1+ parts

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56

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 815 parts In-Stock

1+ parts

$2.452

100+ parts

-

1k+ parts

$2.945

10k+ parts

-

815

$2.452

-

$2.945

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DigiPath Technology Company

USA . 2,298 parts In-Stock

1+ parts

$2.700

100+ parts

$2.484

1k+ parts

-

10k+ parts

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2,298

$2.700

$2.484

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ChromeModa Solutions

Germany . 2,414 parts In-Stock

1+ parts

$2.755

100+ parts

$2.259

1k+ parts

-

10k+ parts

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2,414

$2.755

$2.259

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IDEA Electronic Components Group

UK . 548 parts In-Stock

1+ parts

$2.755

100+ parts

-

1k+ parts

$2.480

10k+ parts

-

548

$2.755

-

$2.480

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AZTECH Wire

Italy . 521 parts In-Stock

1+ parts

$6.897

100+ parts

-

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521

$6.897

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One Stop Electronics

USA . 911 parts In-Stock

1+ parts

$14.000

100+ parts

-

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911

$14.000

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Semicontronic

India . 899 parts In-Stock

1+ parts

$28.000

100+ parts

$27.300

1k+ parts

$27.160

10k+ parts

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899

$28.000

$27.300

$27.160

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Corphita

USA . 4,504 parts In-Stock

1+ parts

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4,504

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Emar International I/E

Canada . 97 parts In-Stock

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97

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Overview

Unlock the power of cutting-edge technology with the TM124BBK32-70 by Texas Instruments. As a leader in the industry, Texas Instruments delivers top-notch quality and reliability in their DRAM products. Perfect for a wide range of applications, this asynchronous memory module offers lightning-fast performance and efficient operation. Experience seamless multitasking and enhanced system responsiveness with the TM124BBK32-70. Upgrade your devices today and discover the unparalleled value and benefits that Texas Instruments brings to every customer.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space and easy integration into electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent control of read and write operations, providing flexibility and efficient data transfer.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with a wide range of systems and devices.

No. of Terminals: 72

Having 72 terminals provides ample connectivity options for integration into different systems.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, this product can withstand harsh environmental conditions.

Memory Width: 32

A memory width of 32 bits allows for efficient data transfer and processing.

Technical Specifications

DRAM TM124BBK32-70 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N72

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SSIM72

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

25.527 mm

Self Refresh:

NO

Maximum Standby Current:

.008 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

720 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Trade Compliance

TM124BBK32-70 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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