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TM124BBJ32F-70L

Texas Instruments

TM124BBJ32F-70L by Texas Instruments

TM124BBJ32F-70L by Texas Instruments is a 1MX32 DRAM module with 70ns access time. Operating at 5V, it offers 1048576 words memory width and 33554432 bit density. Ideal for commercial applications requiring fast page access in microelectronic assemblies.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,352 parts In-Stock

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8,352

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Digiode

USA . 3,957 parts In-Stock

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3,957

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,371 parts In-Stock

1+ parts

$1.842

100+ parts

-

1k+ parts

$2.391

10k+ parts

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2,371

$1.842

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$2.391

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DigiPath Technology Company

USA . 2,155 parts In-Stock

1+ parts

$2.029

100+ parts

$1.866

1k+ parts

-

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2,155

$2.029

$1.866

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IDEA Electronic Components Group

UK . 1,650 parts In-Stock

1+ parts

$2.070

100+ parts

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1k+ parts

$1.863

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1,650

$2.070

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$1.863

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ChromeModa Solutions

Germany . 1,097 parts In-Stock

1+ parts

$2.070

100+ parts

$1.697

1k+ parts

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1,097

$2.070

$1.697

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AZTECH Wire

Italy . 445 parts In-Stock

1+ parts

$17.320

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445

$17.320

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One Stop Electronics

USA . 331 parts In-Stock

1+ parts

$23.000

100+ parts

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331

$23.000

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Corphita

USA . 2,609 parts In-Stock

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2,609

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Overview

Enhance your electronic devices with the TM124BBJ32F-70L by Texas Instruments, a top-quality FAST PAGE DRAM MODULE that offers unmatched performance and reliability. With a memory density of 33554432 bits and a wide memory width of 32 words, this MICROELECTRONIC ASSEMBLY provides seamless operation in a variety of applications. Trust Texas Instruments' reputation for excellence and choose this ASYNCHRONOUS DRAM for superior results, whether you're working on computing systems, telecommunications equipment, or industrial controls. Upgrade your projects today with the TM124BBJ32F-70L and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration and placement of the DRAM module in various electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient data transfer without being tied to a specific clock signal, offering better performance in a variety of applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making it easy to integrate into existing systems.

No. of Terminals: 72

Having 72 terminals provides a robust connection interface for reliable communication between the DRAM module and other components in the system.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly package style offers compact size and efficient heat dissipation, making it suitable for space-constrained environments.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this DRAM module can withstand higher temperatures without compromising performance, ensuring reliability in harsh environments.

Organization: 1MX32

Organized as 1 million words of 32 bits each, providing a large memory capacity and efficient data processing capability for demanding applications.

Minimum Operating Temperature: 0 °C

Operating at a minimum temperature of 0°C allows for reliable performance even in colder environments, ensuring stability and functionality in various conditions.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, reducing the chances of errors during integration.

Minimum Supply Voltage (Vsup): 4.5 V

Supporting a minimum supply voltage of 4.5V ensures stable operation even in low-power scenarios, providing consistent performance in all operating conditions.

Temperature Grade: COMMERCIAL

Designed for commercial-grade applications, ensuring high reliability, compatibility, and performance in business environments.

Access Mode: FAST PAGE

Fast page access mode enables quick and efficient data retrieval, enhancing overall system performance and responsiveness.

Technology: CMOS

Built using CMOS technology, offering low power consumption, high speed, and reliable operation, making it ideal for a wide range of applications.

Terminal Form: NO LEAD

No lead terminal form simplifies installation and minimizes the risk of damage during handling and integration.

No. of Words: 1048576 words

Providing over a million words of memory capacity for storing and processing data efficiently in high-performance systems and applications.

Memory Width: 32

With a memory width of 32 bits, this DRAM module offers high data throughput and processing speed, suitable for demanding computing tasks.

No. of Words Code: 1M

Utilizing a code for 1 million words simplifies memory addressing and management, improving system efficiency and performance.

Maximum Supply Voltage (Vsup): 5.5 V

Operating at a maximum supply voltage of 5.5V ensures a safe and reliable power input range, protecting the module from potential voltage spikes or fluctuations.

Memory Density: 33554432 bit

High memory density of 33,554,432 bits allows for storing large amounts of data in a compact form factor, ideal for memory-intensive applications.

Memory IC Type: FAST PAGE DRAM MODULE

Utilizing fast page DRAM module technology enhances data access speed and efficiency, making it suitable for high-speed computing and data processing tasks.

Maximum Access Time: 70 ns

Fast maximum access time of 70 nanoseconds ensures quick retrieval and processing of data, improving overall system performance and responsiveness.

Technical Specifications

DRAM TM124BBJ32F-70L attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-XSMA-N72

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX32

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

SINGLE

Trade Compliance

TM124BBJ32F-70L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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