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TM124BBK32-10

Texas Instruments

TM124BBK32-10 by Texas Instruments

TM124BBK32-10 by Texas Instruments is a 1MX32 DRAM module with 1048576 words, 32-bit memory width, and 33554432 bit density. Operating in FAST PAGE mode with an access time of 100 ns, it's ideal for high-speed data processing applications requiring fast refresh cycles and low standby current consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,758 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

2,758

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-

-

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Digiode

USA . 2,732 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,732

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,475 parts In-Stock

1+ parts

$2.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,475

$2.000

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-

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Parana Technologies

USA . 309 parts In-Stock

1+ parts

$4.013

100+ parts

-

1k+ parts

$4.478

10k+ parts

-

309

$4.013

-

$4.478

-

DigiPath Technology Company

USA . 896 parts In-Stock

1+ parts

$4.419

100+ parts

$4.065

1k+ parts

-

10k+ parts

-

896

$4.419

$4.065

-

-

ChromeModa Solutions

Germany . 2,278 parts In-Stock

1+ parts

$4.509

100+ parts

$3.697

1k+ parts

-

10k+ parts

-

2,278

$4.509

$3.697

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IDEA Electronic Components Group

UK . 1,766 parts In-Stock

1+ parts

$4.509

100+ parts

-

1k+ parts

$4.058

10k+ parts

-

1,766

$4.509

-

$4.058

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AZTECH Wire

Italy . 790 parts In-Stock

1+ parts

$6.886

100+ parts

-

1k+ parts

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10k+ parts

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790

$6.886

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Corphita

USA . 1,158 parts In-Stock

1+ parts

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100+ parts

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1,158

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Overview

Unleash the power of cutting-edge technology with the TM124BBK32-10 by Texas Instruments. As a leader in the industry, Texas Instruments delivers high-quality DRAM modules that offer unmatched performance and reliability. This versatile product is perfect for a wide range of applications, from data storage to networking. Experience seamless operation and lightning-fast access times with this innovative solution. Trust Texas Instruments to provide you with the best-in-class products that bring value, efficiency, and convenience to your projects. Elevate your performance with the TM124BBK32-10 today!

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape is standard and widely used, making it easy to integrate into existing systems and designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to memory locations, improving efficiency and performance.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with most systems and reduces the risk of damage from voltage fluctuations.

No. of Terminals: 72

Having a higher number of terminals allows for more connections and data transfer paths, enhancing the memory module's capability.

Memory Density: 33554432 bit

High memory density means more data can be stored in a smaller space, making this DRAM module efficient and space-saving.

Technical Specifications

DRAM TM124BBK32-10 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

100 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Alternate Memory Width:

16

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N72

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SSIM72

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

25.5778 mm

Self Refresh:

NO

Maximum Standby Current:

.008 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

520 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Trade Compliance

TM124BBK32-10 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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