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TM124BBK32-6

Texas Instruments

TM124BBK32-6 by Texas Instruments

TM124BBK32-6 by Texas Instruments is a 1MX32 DRAM module with 16-bit memory width. Operating at 5V, it offers fast page access mode with 60ns max access time. Ideal for commercial applications requiring high memory density and low standby current.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,502 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,502

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-

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Digiode

USA . 3,861 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,861

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 89 parts In-Stock

1+ parts

$2.326

100+ parts

$216.047

1k+ parts

$2.094

10k+ parts

-

89

$2.326

$216.047

$2.094

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DigiPath Technology Company

USA . 147 parts In-Stock

1+ parts

$2.562

100+ parts

-

1k+ parts

-

10k+ parts

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147

$2.562

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-

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ChromeModa Solutions

Germany . 4,846 parts In-Stock

1+ parts

$2.614

100+ parts

$2.143

1k+ parts

-

10k+ parts

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4,846

$2.614

$2.143

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IDEA Electronic Components Group

UK . 1,925 parts In-Stock

1+ parts

$2.614

100+ parts

-

1k+ parts

$2.353

10k+ parts

-

1,925

$2.614

-

$2.353

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AZTECH Wire

Italy . 491 parts In-Stock

1+ parts

$8.252

100+ parts

-

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10k+ parts

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491

$8.252

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One Stop Electronics

USA . 1,582 parts In-Stock

1+ parts

$13.000

100+ parts

-

1k+ parts

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1,582

$13.000

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Corphita

USA . 3,555 parts In-Stock

1+ parts

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100+ parts

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3,555

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Overview

Upgrade your device with the TM124BBK32-6 by Texas Instruments, a high-quality DRAM module that offers unmatched performance and reliability. Manufactured by a trusted name in the industry, this asynchronous memory module is perfect for a wide range of applications. With a nominal supply voltage of 5V and fast page access mode, this module provides seamless functionality and lightning-fast data access. Trust Texas Instruments for superior quality and experience the value and benefits of the TM124BBK32-6 for yourself!

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape ensures easy integration and compatibility with various systems and devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for efficient data transfer and processing, making the product suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V provides stable power delivery for consistent performance.

No. of Words: 1048576 words

With a large number of words, this DRAM offers ample storage capacity for handling extensive data processing tasks.

Technology: CMOS

Being based on CMOS technology ensures low power consumption and high speed operation, making it energy efficient and reliable.

Technical Specifications

DRAM TM124BBK32-6 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Alternate Memory Width:

16

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N72

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SSIM72

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

25.5778 mm

Self Refresh:

NO

Maximum Standby Current:

.008 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

760 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Trade Compliance

TM124BBK32-6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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