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TM124BBJ32F-80L

Texas Instruments

TM124BBJ32F-80L by Texas Instruments

TM124BBJ32F-80L by Texas Instruments is a 1MX32 DRAM module with 1048576 words memory width. Operating at 5V, it offers fast page access mode with 80ns max access time. Ideal for commercial applications requiring high memory density and speed.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,427 parts In-Stock

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8,427

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Digiode

USA . 4,971 parts In-Stock

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4,971

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,031 parts In-Stock

1+ parts

$3.440

100+ parts

-

1k+ parts

$3.966

10k+ parts

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2,031

$3.440

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$3.966

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ChromeModa Solutions

Germany . 3,538 parts In-Stock

1+ parts

$3.865

100+ parts

$3.169

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3,538

$3.865

$3.169

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IDEA Electronic Components Group

UK . 1,303 parts In-Stock

1+ parts

$3.865

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$3.478

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1,303

$3.865

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$3.478

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AZTECH Wire

Italy . 300 parts In-Stock

1+ parts

$16.247

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300

$16.247

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One Stop Electronics

USA . 723 parts In-Stock

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$18.000

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723

$18.000

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Corphita

USA . 3,207 parts In-Stock

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3,207

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DigiPath Technology Company

USA . 2,213 parts In-Stock

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$3.485

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2,213

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$3.485

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Overview

Upgrade your electronics with the TM124BBJ32F-80L by Texas Instruments, a high-quality FAST PAGE DRAM MODULE that offers reliable performance and fast access times. Manufactured by industry leader Texas Instruments, this DRAM module is perfect for applications requiring quick data retrieval and seamless operation. With a memory density of 33554432 bit and a memory width of 32, this module provides exceptional value and benefits to customers looking for efficient memory solutions. Trust Texas Instruments for superior quality and innovation in microelectronic assemblies.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for efficient and easy integration into various electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in data transfer, making it suitable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement simplifies power management and compatibility with existing systems.

No. of Terminals: 72

Higher number of terminals allow for more connectivity options and increased data transfer capabilities.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly provides compact size, ideal for space-constrained applications.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures reliable performance even in harsh environments.

Organization: 1MX32

1MX32 organization offers high memory capacity and efficient data access for complex tasks.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature allows for use in a variety of environmental conditions.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces the risk of connectivity issues.

Minimum Supply Voltage (Vsup): 4.5 V

Low minimum supply voltage helps in power efficiency and extends battery life in portable devices.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures compatibility with standard operating conditions in commercial devices.

Access Mode: FAST PAGE

Fast page access mode allows for quick retrieval of data, enhancing overall system performance.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making it energy efficient and reliable.

Terminal Form: NO LEAD

No lead terminal form is environmentally friendly and complies with RoHS regulations.

No. of Words: 1048576 words

High number of words provides ample storage capacity for data-intensive applications.

Memory Width: 32

Memory width of 32 bits allows for efficient data processing and compatibility with modern systems.

No. of Words Code: 1M

1M words code represents the high memory capacity and storage capabilities of the DRAM module.

Maximum Supply Voltage (Vsup): 5.5 V

High maximum supply voltage tolerance ensures stable operation and protection against voltage fluctuations.

Memory Density: 33554432 bit

High memory density enables storage of large amounts of data in a compact form factor.

Memory IC Type: FAST PAGE DRAM MODULE

Fast page DRAM module offers quick data access and retrieval speeds, improving overall system performance.

Maximum Access Time: 80 ns

Low maximum access time ensures fast data processing and response times for efficient system operation.

Technical Specifications

DRAM TM124BBJ32F-80L attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-XSMA-N72

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX32

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

SINGLE

Trade Compliance

TM124BBJ32F-80L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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