Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Micron Technology's MT40A1G16KD-062EIT:ETR is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like computers and servers.
Median Price
-
Lifecycle Status
Suppliers In-Stock
3
In-Stock Inventory
1k+
Vyrian
1+ parts
100+ parts
1k+ parts
10k+ parts
Digiode
Nova Conductors
Aztec Data Supply Inc.
$3.340
Corohmni
$5.623
Semicontronic
$6.000
$5.850
$5.820
AZTECH Wire
$9.452
Ampacity Inc.
$15.000
Corphita
Argo Parts USA
Continental Prestige Electronics
Bastille Electronics
Microchip USA
The use of plastic and epoxy in the package body provides a durable and cost-effective solution for housing the DRAM.
The surface mount feature allows for easy and reliable installation onto circuit boards, making this DRAM suitable for mass production.
The rectangular shape of the package allows for efficient use of space on the circuit board, optimizing layout and design.
The synchronous operation ensures precise timing and coordination with other components, enhancing overall system performance.
The self-refresh capability enables the DRAM to maintain data integrity without relying on external refresh signals, increasing reliability.
The low nominal supply voltage of 1.2V helps reduce power consumption and heat generation, contributing to energy efficiency.
The high number of terminals allows for a strong and stable connection to the circuit board, ensuring reliable data transfer.
The grid array, thin profile, and fine pitch design make this DRAM ideal for compact and high-density applications.
With a maximum operating temperature of 95°C, this DRAM can withstand elevated temperatures for extended periods, suitable for demanding environments.
The 1GX16 organization indicates a high storage capacity and data width, making this DRAM suitable for multitasking and high-performance computing tasks.
The low minimum operating temperature of -40°C ensures reliable performance in cold environments, expanding the range of applications for this DRAM.
The use of a tin-silver-copper terminal finish provides excellent conductivity and resistance to corrosion, ensuring long-term reliability.
The bottom terminal position simplifies installation and improves thermal management, enhancing overall system stability.
The low maximum seated height of 1.2mm allows for a compact design, ideal for slim-profile applications.
With a maximum clock frequency of 1600 MHz, this DRAM can handle high-speed data processing, suitable for demanding computational tasks.
The compact width of 9mm allows for efficient use of space on the circuit board, enabling flexible design options.
The low minimum supply voltage of 1.14V ensures stable operation under varying voltage conditions, improving overall system reliability.
The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and rework procedures, facilitating easy maintenance.
With a peak reflow temperature of 260°C, this DRAM can withstand high-temperature soldering processes, ensuring secure connections.
The moderate length of 13mm provides a balance between compactness and functionality, suitable for a wide range of applications.
The multi-bank page burst access mode enhances data retrieval speed and efficiency, improving overall system performance.
The use of CMOS technology ensures low power consumption and high-speed operation, making this DRAM a reliable and efficient choice.
The ball terminal form enhances electrical contact and soldering reliability, ensuring a stable connection to the circuit board.
With a high number of words, this DRAM offers ample storage capacity for data-intensive applications, making it an excellent choice for high-performance computing.
The sequential burst length of 8 enhances data transfer efficiency and performance, ideal for handling large datasets and computational tasks.
With a memory width of 16, this DRAM can process and transfer data in parallel, improving overall system throughput and speed.
The small terminal pitch of 0.8mm allows for a high-density arrangement of terminals, maximizing connectivity in compact designs.
The 1G words code indicates a high storage capacity, making this DRAM suitable for data-intensive applications and multitasking.
The maximum supply voltage of 1.26V provides an additional margin for voltage fluctuations, ensuring stable operation under varying conditions.
With a high memory density, this DRAM offers ample storage space for large datasets and applications, making it a reliable choice for high-performance computing.
The DDR4 DRAM memory IC type offers high-speed data processing and low latency, making it suitable for demanding computational tasks and applications.
The high number of refresh cycles ensures data integrity and stability over extended periods, suitable for continuous operation and data retention.
The interleaved burst length of 8 improves data access efficiency and performance, facilitating seamless multitasking and high-speed data processing.
DRAM MT40A1G16KD-062EIT:ETR attributes and parameters. Explore more DRAM devices from Micron Technology
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MT40A1G16KD-062EIT:ETR Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
LFXTAL025159REEL
Iqd Frequency Products
LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.
LM7805CT
Fairchild Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
1N4148WT
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBR0520LT1G
Onsemi
MBR0520LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 260°C, and a repetitive peak reverse voltage of 20V. This diode is ideal for applications requiring high-speed switching in compact electronic devices.
1N4148WS
Continental Device India
SMBJ18CA
Lite-on Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
M39029/58-360
Amphenol
CONNECTOR ACCESSORY; MIL Conformity: YES; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: MALE; Terminal Type: CRIMP; IEC Conformity: NO;
BAV99
Micro Commercial Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Comchip Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
Panjit International
LM358N
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
First Components International
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
OPA2227UA
Texas Instruments
OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.
BAV99+
Multicomp Pro
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
SS14
General Instrument
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STM32F407VGT6
STMicroelectronics
STM32F407VGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 196608 bytes RAM, and 16-Ch 12-Bit ADC channels. It is ideal for industrial applications requiring CAN, ETHERNET, I2C(3), SPI(3), UART(2), USB(2) connectivity and features DMA(16) for efficient data transfer. With a max clock frequency of 50 MHz and operating temperature range of -40 to 85 °C, it offers high performance in a compact package style (14mm x 14mm).
CRCW06031K00FKEAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
C1005X7R1E103K050BB
TDK
The TDK C1005X7R1E103K050BB is a ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 25V. It features X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications requiring compact size and stable performance in various electronic circuits.
TS256MLQ64V8U
Transcend Information
DDR2 DRAM MODULE;
MT16KTF2G64HZ-1G6A1
Micron Technology
Micron Technology's MT16KTF2G64HZ-1G6A1 is a 2GX64 DDR DRAM MODULE with 64-bit memory width and 137.4 Gb density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.
MT48LC32M16A2TG-75IT:C
Alliance Memory
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
IS42S16320F-7TLI-TR
Integrated Silicon Solution
IS42S16320F-7TLI-TR by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 536870912-bit memory density. Operating at 3.3V, it features a max access time of 5.4ns and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in compact spaces.
K4T51163QG-HCE6
Samsung
Samsung's K4T51163QG-HCE6 DDR2 DRAM features 32MX16 organization, 333 MHz clock frequency, and 1.8V supply voltage. Ideal for high-performance applications requiring fast data processing and storage with a memory density of 536870912 bits.
MT53E128M32D2DS-046AUT:A
Micron Technology's MT53E128M32D2DS-046AUT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It has a very thin profile, fine pitch package style suitable for automotive applications. Features include synchronous operation, self-refresh capability, and common I/O type.
MT46V32M16P-6T:F
Micron Technology's MT46V32M16P-6T:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT53E256M32D2DS-046WT:B
LPDDR4 DRAM;
SQR-SD3I-8G1K6SNLB
Advantech
Advantech's SQR-SD3I-8G1K6SNLB DDR3L DRAM Module features 8GX1 organization, 204 terminals, and operates at 1.35V. Ideal for applications requiring high memory density and reliable performance in a wide temperature range from -40 to 85°C.
MT40A1G8WE-083E:BTR
Micron Technology's MT40A1G8WE-083E:BTR is a DDR4 DRAM with 1GX8 organization, operating at up to 1200.48 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices with a max temperature of 95°C.
MT40A512M16LY-062E:E
Micron Technology's MT40A512M16LY-062E:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in various electronic devices.
D2164A-20
Intel
Intel's D2164A-20 is a 64KX1 PAGE MODE DRAM with 65536 bit memory density. Operating at 5V, it offers 128 refresh cycles and has a max access time of 200ns. Ideal for commercial applications requiring high-speed memory solutions.
IS42S32800G-7BLI
IS42S32800G-7BLI by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 143 MHz and has a min operating temperature of -40 °C. It is commonly used in industrial applications requiring high-speed memory access.
MT46V16M16P-5B:M
Micron Technology's MT46V16M16P-5B:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
KM44C256BP-7
Samsung's KM44C256BP-7 is a 256Kx4 DRAM with 262144 words and memory density of 1048576 bits. Operating at 5V, it has a max access time of 70ns and refresh cycles of 512. Ideal for applications requiring fast page access in commercial temperature grades.
MT4C4001JDJ-6
Micron Technology's MT4C4001JDJ-6 is a 1MX4 DRAM with 1048576 words, 60ns access time, and 4194304-bit memory density. It is used in fast page applications requiring common I/O type and operates at a nominal voltage of 5V.
W9825G6KH-5
Winbond Electronics
W9825G6KH-5 by Winbond Electronics is a 16Mx16 Synchronous DRAM with 268MB memory density. Operating at 3.3V, it offers a max access time of 4.5ns and supports four bank page burst access mode. Ideal for commercial applications requiring high-speed synchronous memory solutions in compact form factors.
S27KL0642DPBHI020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Memory Density: 67108864 bit;
MT47H128M16HG-3IT
Micron Technology's MT47H128M16HG-3IT is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access times in industrial environments.
MTA9ADF1G72AZ-3G2E1
Micron Technology's MTA9ADF1G72AZ-3G2E1 is a 1GX72 DDR DRAM MODULE with 1073741824 words and 77309411328 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.
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MT40A512M16LY-062EIT:ETR
Micron Technology's MT40A512M16LY-062EIT:ETR is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. This thin-profile memory module is suitable for applications requiring high-speed data processing in a compact form factor.
MT40A512M16LY-062EIT:E
Micron Technology's MT40A512M16LY-062EIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with multi-bank page burst access mode.
MT40A512M16LY-062EAIT:E
Micron Technology's MT40A512M16LY-062EAIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption.
MT40A512M16LY-062EAUT:E
Micron Technology's MT40A512M16LY-062EAUT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and automotive temperature grade. Suitable for applications requiring high memory density and fast data access in automotive electronics.
MT40A256M16GE-083E:B
Micron Technology's MT40A256M16GE-083E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed data processing applications in electronics.
MT40A512M16LY-062EAAT:E
Micron Technology's MT40A512M16LY-062EAAT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 105 °C, and has a max supply voltage of 1.26 V. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A512M16LY-075:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;
MT40A1G16TB-062EIT:F
Micron Technology's MT40A1G16TB-062EIT:F is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A1G16RC-062EIT:B
Micron Technology's MT40A1G16RC-062EIT:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT40A512M16LY-062EAUT:ETR
MT40A512M16LY-062EAUT:ETR by Micron Technology is a DDR4 DRAM with 512MX16 organization, operating at a max clock frequency of 1600 MHz. It is commonly used in applications requiring high-speed and synchronous memory access, such as servers, workstations, and high-performance computing systems.
MT40A512M16TB-062E:R
Micron Technology's MT40A512M16TB-062E:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as computers and servers.
MT40A256M16LY-062EIT:F
Micron Technology's MT40A256M16LY-062EIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in thin profile devices.
MT40A1G16KD-062EIT:E
Micron Technology's MT40A1G16KD-062EIT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
MT40A1G16TB-062E:F
Micron Technology's MT40A1G16TB-062E:F is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A1G16RC-062EIT:BTR
DDR4 DRAM; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260; JESD-609 Code: e1;
MT40A256M16LY-062EAIT:F
Micron Technology's MT40A256M16LY-062EAIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 95°C.
MT40A1G16KD-062E:E
Micron Technology's MT40A1G16KD-062E:E is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package, synchronous operation, and self-refresh capability. Ideal for applications requiring high-speed memory performance in compact form factors.
MT40A256M16LY-062EAAT:FTR
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.26 V; Maximum Seated Height: 1.2 mm;
MT40A256M16LY-062EAAT:F
Micron Technology's MT40A256M16LY-062EAAT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and reliability in harsh environments.
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
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