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TM124BBJ32F-80

Texas Instruments

TM124BBJ32F-80 by Texas Instruments

TM124BBJ32F-80 by Texas Instruments is a 1MX32 DRAM module with 32-bit memory width. It operates at 5V, has an access time of 80ns, and offers fast page access mode. Ideal for applications requiring high-speed data storage in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,712 parts In-Stock

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8,712

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Digiode

USA . 2,896 parts In-Stock

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2,896

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,127 parts In-Stock

1+ parts

$2.606

100+ parts

-

1k+ parts

$3.095

10k+ parts

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1,127

$2.606

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$3.095

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DigiPath Technology Company

USA . 1,053 parts In-Stock

1+ parts

$2.869

100+ parts

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1,053

$2.869

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ChromeModa Solutions

Germany . 1,892 parts In-Stock

1+ parts

$2.928

100+ parts

$2.401

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1,892

$2.928

$2.401

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IDEA Electronic Components Group

UK . 204 parts In-Stock

1+ parts

$2.928

100+ parts

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$2.635

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204

$2.928

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$2.635

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One Stop Electronics

USA . 992 parts In-Stock

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$14.000

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992

$14.000

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AZTECH Wire

Italy . 408 parts In-Stock

1+ parts

$17.655

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408

$17.655

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Corphita

USA . 875 parts In-Stock

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875

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Overview

Unleash the power of cutting-edge technology with the TM124BBJ32F-80 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality and reliability in their products. This DRAM module is perfect for a wide range of applications, providing seamless performance and efficiency. With its fast access time and high memory density, this product offers exceptional value and benefits to customers looking for superior performance in their electronic devices. Upgrade your technology with Texas Instruments and experience the difference today.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for efficient packaging and easy integration into electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and flexible timing, enabling faster processing speeds.

Input/Output Type: COMMON

Common input/output type simplifies communication and compatibility with other components.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage of 5V ensures reliable and consistent performance.

Power Supplies (V): 5

Using 5V power supplies ensures compatibility with standard electronic systems.

No. of Terminals: 72

Having 72 terminals provides ample connectivity options for various configurations.

Maximum Operating Temperature: 70 °C

High maximum operating temperature of 70°C allows for use in a wide range of environments.

Organization: 1MX32

1MX32 organization offers high memory capacity and efficient data storage.

Output Characteristics: 3-STATE

3-state output characteristics allow for tristate outputs, providing flexibility in data transmission.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature of 0°C ensures reliable performance even in cold conditions.

Terminal Position: SINGLE

Single terminal position simplifies installation and handling of the DRAM module.

Maximum Seated Height: 17.78 mm

Compact maximum seated height of 17.78mm enables space-saving installation in electronic devices.

Minimum Supply Voltage (Vsup): 4.5 V

Low minimum supply voltage of 4.5V ensures efficient power consumption and compatibility.

Temperature Grade: COMMERCIAL

Commercial temperature grade makes this DRAM suitable for standard commercial applications.

Access Mode: FAST PAGE

Fast page access mode allows for quick retrieval of data, enhancing overall system performance.

Technology: CMOS

CMOS technology provides low power consumption and high speed operation for efficient data processing.

Terminal Form: NO LEAD

No lead terminal form simplifies installation and reduces the risk of damage during handling.

Maximum Supply Current: 340 mA

340mA maximum supply current ensures stable power supply for the DRAM module.

No. of Words: 1048576 words

High number of words allows for extensive data storage and retrieval capabilities.

Memory Width: 32

Memory width of 32 bits enables efficient data processing and storage.

Terminal Pitch: 1.27 mm

Terminal pitch of 1.27mm allows for easy connectivity and integration with other components.

No. of Words Code: 1M

1M words code indicates high memory capacity and efficient data organization.

Maximum Supply Voltage (Vsup): 5.5 V

Maximum supply voltage of 5.5V ensures compatibility with standard power supplies and systems.

Memory Density: 33554432 bit

High memory density of 33554432 bits allows for extensive data storage capabilities.

Memory IC Type: FAST PAGE DRAM MODULE

Fast page DRAM module offers quick access to stored data, enhancing overall system performance.

Maximum Standby Current: 0.002 Amp

Low maximum standby current of 0.002A ensures efficient power usage during idle periods.

Refresh Cycles: 1024

1024 refresh cycles ensure data integrity and reliability in long-term usage.

Maximum Access Time: 80 ns

Maximum access time of 80ns ensures fast data retrieval and processing speeds.

Technical Specifications

DRAM TM124BBJ32F-80 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N72

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SSIM72

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

17.78 mm

Self Refresh:

NO

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

340 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Trade Compliance

TM124BBJ32F-80 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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