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TM124BBK32-60L

Texas Instruments

TM124BBK32-60L by Texas Instruments

TM124BBK32-60L by Texas Instruments is a 1MX32 DRAM module with 1048576 words, operating at 5V. It features a fast access time of 60ns and offers 3-STATE output characteristics. Ideal for applications requiring high-speed memory operations in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,874 parts In-Stock

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Digiode

USA . 405 parts In-Stock

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405

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Parana Technologies

USA . 743 parts In-Stock

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$2.039

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$2.562

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743

$2.039

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$2.562

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DigiPath Technology Company

USA . 1,211 parts In-Stock

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$2.245

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$2.066

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$2.245

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ChromeModa Solutions

Germany . 6,478 parts In-Stock

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$2.291

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$1.879

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$2.291

$1.879

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IDEA Electronic Components Group

UK . 257 parts In-Stock

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$2.291

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$2.062

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257

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One Stop Electronics

USA . 132 parts In-Stock

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$18.000

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$18.000

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AZTECH Wire

Italy . 732 parts In-Stock

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$18.319

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Corphita

USA . 55 parts In-Stock

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Overview

Enhance your electronic projects with the TM124BBK32-60L by Texas Instruments, a top-quality FAST PAGE DRAM MODULE designed to meet your memory needs. With Texas Instruments' reputation for excellence in the industry, you can trust in the reliability and performance of this product. Whether you're working on computer systems, telecommunications equipment, or industrial applications, this module offers fast access times and high memory density to boost efficiency. Upgrade your projects today with the TM124BBK32-60L and experience the value and benefits it brings to your work.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient and space-saving integration into electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to data, optimizing performance.

Nominal Supply Voltage / Vsup (V): 5

Nominal supply voltage of 5V is a common standard, ensuring compatibility with many systems.

No. of Terminals: 72

Having 72 terminals facilitates easy connection and communication with other components in a system.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly package style enables compact design and efficient assembly of the DRAM module.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this DRAM can withstand and perform reliably under varying thermal conditions.

Organization: 1MX32

1MX32 organization means the DRAM module has a memory capacity of 1 megabyte with 32 data lines, suitable for many applications.

Output Characteristics: 3-STATE

The 3-STATE output characteristic allows for high-speed data transmission and efficient data storage management.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures that the DRAM can function reliably even in colder environments.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection of the DRAM module in a system.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage of 4.5V ensures that the DRAM operates within safe voltage ranges for stable performance.

Temperature Grade: COMMERCIAL

Commercial temperature grade indicates that the DRAM is suitable for use in standard commercial applications.

Access Mode: FAST PAGE

Fast page access mode enhances data retrieval speed and efficiency, improving overall system performance.

Technology: CMOS

CMOS technology offers low power consumption and high reliability, making the DRAM module energy-efficient and durable.

Terminal Form: NO LEAD

No lead terminal form is environmentally friendly and complies with RoHS regulations, promoting sustainability.

No. of Words: 1048576 words

Having a large number of words (data storage units) ensures ample memory capacity for storing and accessing data efficiently.

Memory Width: 32

A memory width of 32 bits allows for the simultaneous processing of 32 bits of data, enhancing data transfer speeds.

No. of Words Code: 1M

The 1M word code denotes that the DRAM module has a memory capacity of 1 million words, suitable for a wide range of applications.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V provides a safe operating range for the DRAM and ensures stable performance.

Memory Density: 33554432 bit

High memory density of 33554432 bits allows for efficient storage and retrieval of large amounts of data.

Memory IC Type: FAST PAGE DRAM MODULE

Fast page DRAM module type offers rapid data access and retrieval, making it ideal for high-performance computing tasks.

Refresh Cycles: 1024

Having 1024 refresh cycles ensures that data stored in the DRAM remains intact and accessible without data loss or corruption.

Maximum Access Time: 60 ns

A maximum access time of 60 nanoseconds ensures quick data retrieval and processing, enhancing overall system performance.

Technical Specifications

DRAM TM124BBK32-60L attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-XSMA-N72

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Qualification:

Not Qualified

Refresh Cycles:

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

SINGLE

Trade Compliance

TM124BBK32-60L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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