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TM124BBJ32U-80

Texas Instruments

TM124BBJ32U-80 by Texas Instruments

TM124BBJ32U-80 by Texas Instruments is a 1MX32 DRAM module with 32-bit memory width. It operates asynchronously at 5V, offering fast page access mode with 80ns max access time. Ideal for commercial applications requiring high-speed memory performance in microelectronic assemblies.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,798 parts In-Stock

1+ parts

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6,798

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Digiode

USA . 1,904 parts In-Stock

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1,904

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 746 parts In-Stock

1+ parts

$2.742

100+ parts

-

1k+ parts

$3.226

10k+ parts

-

746

$2.742

-

$3.226

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DigiPath Technology Company

USA . 768 parts In-Stock

1+ parts

$3.019

100+ parts

-

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768

$3.019

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ChromeModa Solutions

Germany . 607 parts In-Stock

1+ parts

$3.081

100+ parts

$2.526

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607

$3.081

$2.526

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IDEA Electronic Components Group

UK . 350 parts In-Stock

1+ parts

$3.081

100+ parts

-

1k+ parts

$2.773

10k+ parts

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350

$3.081

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$2.773

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AZTECH Wire

Italy . 221 parts In-Stock

1+ parts

$10.841

100+ parts

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221

$10.841

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One Stop Electronics

USA . 1,442 parts In-Stock

1+ parts

$20.000

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1,442

$20.000

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Corphita

USA . 744 parts In-Stock

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744

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Overview

Enhance your electronic devices with the high-quality TM124BBJ32U-80 by Texas Instruments, a leading manufacturer in the industry. This DRAM module offers unparalleled performance and reliability for a wide range of applications. With its fast access time, efficient power consumption, and advanced technology, this product provides exceptional value and benefits to customers looking to optimize their systems. Upgrade your products today with the TM124BBJ32U-80 and experience the superior quality and advantages that Texas Instruments has to offer.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular packages are commonly used in electronic components, providing a standard form factor for easy integration into various devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for more flexible and efficient data transfers, especially in applications where timing may vary.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with common power supplies and reduces the need for additional voltage regulation.

No. of Terminals: 72

Having a higher number of terminals allows for more connections and features, increasing the versatility and functionality of the product.

Organization: 1MX32

The 1MX32 organization indicates a high memory capacity and data width, making it suitable for large data storage and processing applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast operation, making it ideal for efficient memory management in electronic devices.

Memory Density: 33554432 bit

High memory density enables the storage of a large amount of data in a compact space, making the product suitable for memory-intensive applications.

Maximum Access Time: 80 ns

The low maximum access time ensures quick retrieval of data, improving overall system performance and responsiveness.

Technical Specifications

DRAM TM124BBJ32U-80 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N72

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SSIM72

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

17.78 mm

Self Refresh:

NO

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

340 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Trade Compliance

TM124BBJ32U-80 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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