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TM124BBJ32U-60

Texas Instruments

TM124BBJ32U-60 by Texas Instruments

TM124BBJ32U-60 by Texas Instruments is a 1MX32 DRAM module with 1048576 words, 33554432 bit memory density, and 32-bit memory width. It operates at a max temperature of 70°C in commercial grade applications. The asynchronous module has a fast page access mode with a max access time of 60 ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,681 parts In-Stock

1+ parts

-

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8,681

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Digiode

USA . 214 parts In-Stock

1+ parts

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214

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,158 parts In-Stock

1+ parts

$3.878

100+ parts

-

1k+ parts

$4.358

10k+ parts

-

1,158

$3.878

-

$4.358

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DigiPath Technology Company

USA . 1,719 parts In-Stock

1+ parts

$4.270

100+ parts

$3.928

1k+ parts

-

10k+ parts

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1,719

$4.270

$3.928

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ChromeModa Solutions

Germany . 6,263 parts In-Stock

1+ parts

$4.357

100+ parts

$3.573

1k+ parts

-

10k+ parts

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6,263

$4.357

$3.573

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IDEA Electronic Components Group

UK . 23 parts In-Stock

1+ parts

$4.357

100+ parts

-

1k+ parts

$3.921

10k+ parts

-

23

$4.357

-

$3.921

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AZTECH Wire

Italy . 302 parts In-Stock

1+ parts

$6.817

100+ parts

-

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302

$6.817

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One Stop Electronics

USA . 1,109 parts In-Stock

1+ parts

$13.000

100+ parts

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1,109

$13.000

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Corphita

USA . 2,997 parts In-Stock

1+ parts

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2,997

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Overview

Upgrade your electronics with the TM124BBJ32U-60 by Texas Instruments, a high-quality DRAM module that offers unparalleled performance and reliability. Manufactured by industry leader Texas Instruments, this module is perfect for a wide range of applications. With fast access times and a large memory density, this module provides customers with exceptional value and benefits. Trust in Texas Instruments to deliver top-notch products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for efficient packaging and space utilization in electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster processing and data transmission compared to synchronous operation.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage of 5V ensures reliable performance and power efficiency.

No. of Terminals: 72

Higher number of terminals allows for more connections and data transfer capabilities.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures product reliability in various environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making it an energy-efficient choice.

Memory IC Type: FAST PAGE DRAM MODULE

Fast page DRAM module offers quick access times and efficient data retrieval, enhancing overall system performance.

Technical Specifications

DRAM TM124BBJ32U-60 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N72

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SSIM72

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

17.78 mm

Self Refresh:

NO

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

380 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Trade Compliance

TM124BBJ32U-60 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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