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TM124BBJ32F-70

Texas Instruments

TM124BBJ32F-70 by Texas Instruments

TM124BBJ32F-70 by Texas Instruments is a 1MX32 DRAM module with 5V supply, operating at 0-70 °C. It features asynchronous mode, 3-STATE output, and FAST PAGE access. Ideal for applications requiring high-speed memory operations in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,289 parts In-Stock

1+ parts

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2,289

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Digiode

USA . 969 parts In-Stock

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969

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,457 parts In-Stock

1+ parts

$4.416

100+ parts

$410.109

1k+ parts

$3.975

10k+ parts

-

1,457

$4.416

$410.109

$3.975

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DigiPath Technology Company

USA . 420 parts In-Stock

1+ parts

$4.863

100+ parts

$4.474

1k+ parts

-

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420

$4.863

$4.474

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ChromeModa Solutions

Germany . 4,102 parts In-Stock

1+ parts

$4.962

100+ parts

$4.069

1k+ parts

-

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4,102

$4.962

$4.069

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IDEA Electronic Components Group

UK . 1,962 parts In-Stock

1+ parts

$4.962

100+ parts

-

1k+ parts

$4.466

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1,962

$4.962

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$4.466

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One Stop Electronics

USA . 1,306 parts In-Stock

1+ parts

$9.000

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1,306

$9.000

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AZTECH Wire

Italy . 201 parts In-Stock

1+ parts

$13.293

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201

$13.293

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Corphita

USA . 2,484 parts In-Stock

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2,484

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Overview

Unlock the power of cutting-edge technology with the TM124BBJ32F-70 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-quality products that deliver exceptional performance and reliability. Designed for applications requiring high-speed data processing, this FAST PAGE DRAM MODULE provides seamless operation and efficient data management. Experience the value of innovation with the TM124BBJ32F-70, offering customers unparalleled benefits and advantages in their electronic designs. Trust in Texas Instruments to bring you the best in memory solutions.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for efficient packaging and stacking of multiple modules in a system, optimizing space usage.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent access to each memory cell, providing flexibility and faster data retrieval.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power supply systems in most devices.

No. of Terminals: 72

Having 72 terminals allows for efficient connectivity and data transfer between the memory module and other components in the system.

Organization: 1MX32

Organized as 1 Megabyte by 32 bits, providing a high data storage capacity with a wide memory width for faster access speeds.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and reliable performance, making it suitable for a wide range of applications.

Technical Specifications

DRAM TM124BBJ32F-70 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N72

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SSIM72

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

17.78 mm

Self Refresh:

NO

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

360 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Trade Compliance

TM124BBJ32F-70 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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