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MT48LC4M32B2B5-6AXIT:L

Micron Technology

MT48LC4M32B2B5-6AXIT:L by Micron Technology

Micron Technology's MT48LC4M32B2B5-6AXIT:L is a 3.3V Synchronous DRAM with 4MX32 organization, operating at -40 to 85 °C. It features self-refresh mode, very thin profile package style, and industrial temperature grade. Ideal for applications requiring fast access time, such as networking equipment and industrial automation systems.

Median Price

$15.962

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,250 parts In-Stock

1+ parts

$13.784

100+ parts

-

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1,250

$13.784

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Verical

USA . 1,250 parts In-Stock

1+ parts

$13.784

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1,250

$13.784

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Mouser Electronics

USA . 910 parts In-Stock

1+ parts

$18.140

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910

$18.140

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Farnell

UK . 218 parts In-Stock

1+ parts

$23.340

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218

$23.340

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Element14

Singapore . 440 parts In-Stock

1+ parts

$34.040

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440

$34.040

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EBV Elektronik

Germany . 10,080 parts In-Stock

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10,080

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Future Electronics

Canada . 2,880 parts In-Stock

1+ parts

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$7.150

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2,880

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$7.150

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,890 parts In-Stock

1+ parts

$7.590

100+ parts

-

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1,890

$7.590

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$12.204

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300

$12.204

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Component Electronics Inc.

Canada . 17 parts In-Stock

1+ parts

$26.920

100+ parts

$20.190

1k+ parts

$17.500

10k+ parts

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17

$26.920

$20.190

$17.500

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Chip Stock

USA . 5,026 parts In-Stock

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5,026

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Cyclops Electronics Ltd

UK . 3,073 parts In-Stock

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3,073

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Vyrian

USA . 2,527 parts In-Stock

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2,527

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BCID Electronics Ltd.

Israel . 942 parts In-Stock

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Sensible Micro Corp

USA . 879 parts In-Stock

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879

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NAC Semi

USA . 868 parts In-Stock

1+ parts

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$14.220

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868

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$14.220

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ComSIT Distribution GmbH

Germany . 440 parts In-Stock

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440

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Dark Horse Electronics

USA . 80 parts In-Stock

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80

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 222 parts In-Stock

1+ parts

$4.262

100+ parts

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222

$4.262

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Aztec Data Supply Inc.

USA . 3,043 parts In-Stock

1+ parts

$5.660

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3,043

$5.660

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Ampacity Inc.

Singapore . 2,285 parts In-Stock

1+ parts

$6.790

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2,285

$6.790

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Corphita

USA . 368 parts In-Stock

1+ parts

$7.191

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368

$7.191

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Continental Prestige Electronics

USA . 2,369 parts In-Stock

1+ parts

$11.537

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$11.306

2,369

$11.537

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$11.306

Semicontronic

India . 2,217 parts In-Stock

1+ parts

$14.780

100+ parts

$14.410

1k+ parts

$14.337

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2,217

$14.780

$14.410

$14.337

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,016 parts In-Stock

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Argo Parts USA

USA . 934 parts In-Stock

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934

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Speed Components Ltd (Excess)

Israel . 929 parts In-Stock

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929

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Cyclops Electronics Ltd (Excess)

UK . 387 parts In-Stock

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387

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Overview

Elevate your electronic devices with the cutting-edge MT48LC4M32B2B5-6AXIT:L from Micron Technology. As a leader in DRAM technology, Micron ensures top-quality products designed for seamless integration and optimal performance. This versatile memory module is perfect for a wide range of applications, providing reliable storage solutions with its synchronous operation and self-refresh capabilities. Experience the value and benefits of Micron's expertise in memory technology with the MT48LC4M32B2B5-6AXIT:L, offering customers unparalleled advantages in their electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, ensuring the product can withstand rough handling and harsh environments.

Operating Mode: SYNCHRONOUS

Allows for synchronized data transfers, resulting in faster and more efficient performance.

Nominal Supply Voltage / Vsup (V): 3.3

Low power consumption while maintaining optimal performance.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature conditions without compromising performance.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor technology provides low power consumption and high noise immunity.

Technical Specifications

DRAM MT48LC4M32B2B5-6AXIT:L attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B90

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

90

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

MT48LC4M32B2B5-6AXIT:L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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