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NOIX3SE012KB-LTI

Onsemi

NOIX3SE012KB-LTI by Onsemi

NOIX3SE012KB-LTI by Onsemi features 3.2x3.2 um pixel size, 32.4 MHz master clock, and 4096 horizontal pixels. Ideal for image sensing applications with a spectral response of 300-1000 nm, I2C/SPI interface, and frame rate of 28 fps.

Median Price

$325.400

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 35 parts In-Stock

1+ parts

$325.400

100+ parts

$289.654

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35

$325.400

$289.654

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Distributors (In-Stock)

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Digiode

USA . 2,347 parts In-Stock

1+ parts

$393.860

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Vyrian

USA . 2,945 parts In-Stock

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Flip Electronics

USA . 25 parts In-Stock

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25

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Distributors (Availability)

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Corphita

USA . 1,681 parts In-Stock

1+ parts

$373.131

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1,681

$373.131

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Corohmni

South Africa . 321 parts In-Stock

1+ parts

$414.590

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321

$414.590

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SupplyDigital Components

Austria . 8,314 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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TANS Electronics

Latvia . 7,392 parts In-Stock

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Problanco Electronics

Mexico . 3,466 parts In-Stock

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Kulean Microsystems

USA . 2,777 parts In-Stock

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UHIMA Technologies

Türkiye . 928 parts In-Stock

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Overview

Experience unparalleled image quality and performance with the NOIX3SE012KB-LTI by Onsemi. As a leading manufacturer in the industry, Onsemi's Image Sensors are renowned for their exceptional reliability and cutting-edge technology. With applications ranging from surveillance systems to medical imaging, this sensor offers customers unmatched value and benefits. Enhance your projects with its high-resolution capabilities and advanced features, setting you apart from the competition. Trust Onsemi to deliver top-notch quality and innovation with the NOIX3SE012KB-LTI.

Feature Benefit Bullets

Pixel Size (um): 3.2X3.2

Small pixel size allows for high resolution images with clear details.

Maximum Supply Voltage: 1.3 V

Low power consumption with efficient voltage supply.

Master Clock: 32.4 MHz

High clock frequency enables fast image capture and processing.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data transfer and integration with other systems.

Dynamic Range: 68 dB

Wide dynamic range ensures accurate and detailed image capture in various lighting conditions.

Spectral Response (nm): 300-1000

Broad spectral response range allows for versatile image capture in different wavelengths.

Frame Rate: 28 fps

High frame rate enables smooth video recording and real-time imaging.

Technical Specifications

Image Sensors NOIX3SE012KB-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.7 V TO 2.9V

Array Type:

FRAME

Body Width:

19.9 inch

Body Height:

2.54 mm

Body Length/Diameter:

20.88 mm

Dynamic Range:

68 dB

Frame Rate:

28 fps

Horizontal Pixel:

4096

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

32.4 MHz

Mounting Feature:

Maximum Operating Current:

240 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

I2C/SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Sensors or Transducers Type:

Spectral Response (nm):

300-1000

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.1 V

Termination Type:

SOLDER

Vertical Pixel:

3072

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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