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NOIX2SF8000B-LTI1

Onsemi

NOIX2SF8000B-LTI1 by Onsemi

NOIX2SF8000B-LTI1 by Onsemi is an Image Sensor with 3.2X3.2um pixel size, 32.4 MHz master clock, and 4096 horizontal pixels. Ideal for digital cameras, surveillance systems, and machine vision applications due to its high frame rate of 80 fps and wide spectral response range of 300-1000nm.

Median Price

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Lifecycle Status

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5

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1k+

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Vyrian

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SupplyDigital Components

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TANS Electronics

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Problanco Electronics

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Kulean Microsystems

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Corohmni

South Africa . 435 parts In-Stock

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UHIMA Technologies

Türkiye . 387 parts In-Stock

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Corphita

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Overview

Capture breathtaking images with the NOIX2SF8000B-LTI1 by Onsemi, a top-quality image sensor designed to exceed your expectations. Manufactured by industry leader Onsemi, this sensor is perfect for a wide range of applications, from security cameras to industrial automation. Experience unrivaled performance and reliability with this cutting-edge product, offering unparalleled value and benefits to customers. Upgrade your imaging capabilities today with the NOIX2SF8000B-LTI1 and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 3.2X3.2

Smaller pixel size allows for higher resolution imaging and better image quality.

Maximum Supply Voltage: 1.3 V

Low supply voltage helps in reducing power consumption and heat generation.

Master Clock: 32.4 MHz

High master clock frequency enables fast data processing and high frame rates.

Body Width: 19.9 inch

Compact body width makes it easy to integrate into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology offers high sensitivity and low noise performance.

Body Height: 2.54 mm

Low body height allows for slim and sleek device designs.

Package Shape or Style: RECTANGULAR

Rectangular package shape ensures easy mounting and integration.

Minimum Supply Voltage: 1.1 V

Low minimum supply voltage provides flexibility in power requirements.

Maximum Operating Temperature: 85 °C

High operating temperature range enables use in various environmental conditions.

Horizontal Pixel: 4096

High horizontal pixel count results in detailed and sharp images.

Output Range: 0.4-1.5V

Wide output voltage range allows for versatile signal processing and compatibility.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies interfacing with other digital systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures reliable performance in cold environments.

Maximum Operating Current: 240 mA

High maximum operating current supports power-hungry applications.

Housing: CERAMIC, METAL-SEALED COFIRED

Robust housing material provides durability and protection against environmental factors.

Dynamic Range: 68 dB

High dynamic range allows for capturing both bright and dark areas in a scene.

Vertical Pixel: 2160

High vertical pixel count contributes to the overall image resolution and quality.

Body Length/Diameter: 20.88 mm

Compact body length/diameter for efficient space utilization in devices.

Spectral Response (nm): 300-1000

Wide spectral response range enables capturing images across various light wavelengths.

Optical Format (inch): 1/1.1

Standard optical format for compatibility with various lens systems.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections.

Output Interface Type: I2C/SPI INTERFACE

Versatile output interface options for easy integration with different systems.

Frame Rate: 80 fps

High frame rate for capturing fast-moving subjects or scenes with clarity.

Array Type: FRAME

Frame array design for efficient image capture and processing.

Mounting Feature: SURFACE MOUNT

Surface mount compatibility for easy and secure installation on PCBs.

Technical Specifications

Image Sensors NOIX2SF8000B-LTI1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.7 V TO 2.9V

Array Type:

FRAME

Body Width:

19.9 inch

Body Height:

2.54 mm

Body Length/Diameter:

20.88 mm

Dynamic Range:

68 dB

Frame Rate:

80 fps

Horizontal Pixel:

4096

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

32.4 MHz

Mounting Feature:

Maximum Operating Current:

240 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/1.1

Output Interface Type:

I2C/SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Sensors or Transducers Type:

Spectral Response (nm):

300-1000

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.1 V

Termination Type:

SOLDER

Vertical Pixel:

2160

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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