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NOIP1FN2000A-QDI

Onsemi

NOIP1FN2000A-QDI by Onsemi

NOIP1FN2000A-QDI by Onsemi is a 1920x1200 CMOS image sensor with 4.8um pixel size, offering 60dB dynamic range and 230fps frame rate. Ideal for applications requiring high-resolution imaging in industrial cameras or machine vision systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,652 parts In-Stock

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Digiode

USA . 278 parts In-Stock

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AZTECH Wire

Italy . 254 parts In-Stock

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$10.560

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Problanco Electronics

Mexico . 7,482 parts In-Stock

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Kulean Microsystems

USA . 3,230 parts In-Stock

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Corphita

USA . 2,311 parts In-Stock

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TANS Electronics

Latvia . 2,036 parts In-Stock

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SupplyDigital Components

Austria . 995 parts In-Stock

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UHIMA Technologies

Türkiye . 801 parts In-Stock

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Perfect Parts

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Corohmni

South Africa . 342 parts In-Stock

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Overview

Capture stunning images with the NOIP1FN2000A-QDI by Onsemi, a top-tier manufacturer known for quality and reliability. As a cutting-edge image sensor, this product offers unparalleled performance in a variety of applications. Whether you're a professional photographer or an amateur enthusiast, this sensor provides exceptional value with its high resolution, fast frame rate, and wide dynamic range. Elevate your photography experience with the NOIP1FN2000A-QDI and unlock endless creative possibilities.

Feature Benefit Bullets

Pixel Size (um): 4.8X4.8

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage: 1.9 V

Higher maximum supply voltage provides flexibility in power supply options and can help improve signal-to-noise ratio.

Master Clock: 360 MHz

High master clock frequency enables high-speed image processing and data transfer.

Body Width: 19 inch

Compact body width makes the sensor suitable for use in various applications and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology offers low power consumption, high sensitivity, and fast data readout.

Package Shape or Style: SQUARE

Square package shape simplifies mounting and integration into devices, saving space.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption and improving efficiency.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Horizontal Pixel: 1920

Higher number of horizontal pixels enables wider image capture and better overall image quality.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the sensor can function even in extreme cold conditions.

Dynamic Range: 60 dB

High dynamic range allows for capturing a wide range of light intensities without losing detail.

Vertical Pixel: 1200

Increased number of vertical pixels provides better resolution and clarity in captured images.

Body Length/Diameter: 19 mm

Compact body length/diameter facilitates easy integration and installation in devices.

Spectral Response (nm): 400-1000

Wide spectral response range allows the sensor to capture images across different wavelengths of light.

Optical Format (inch): 2/3

Common optical format allows for compatibility with various lenses and optical systems.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection for the sensor during installation.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface simplifies connectivity and data transfer between the sensor and other devices.

Frame Rate: 230 fps

High frame rate enables capturing fast-moving objects with smooth and clear motion in videos.

Array Type: FRAME

Frame array type enables simultaneous capture of multiple pixels for faster image processing.

Sensitivity (V/lx.s): 7.5 V/lx.s

High sensitivity allows the sensor to capture clear images even in low-light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies the installation process and allows for easy integration into devices.

Technical Specifications

Image Sensors NOIP1FN2000A-QDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

2.41 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

230 fps

Horizontal Pixel:

1920

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

2/3

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1200

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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