Loading...

MT9V011P11STC-B-DR

Onsemi

MT9V011P11STC-B-DR by Onsemi

The Onsemi MT9V011P11STC-B-DR is a CMOS image sensor with 640x480 pixels and 5.60um pixel size. It operates at 2.55-3.05V, has a max temp of 60 °C, and outputs digital voltage from 0.20-2.60V. Ideal for applications requiring a square package style, such as frame arrays in surface mount setups with a 30 fps frame rate.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,739 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,739

-

-

-

-

Digiode

USA . 233 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

233

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 561 parts In-Stock

1+ parts

$21.530

100+ parts

-

1k+ parts

-

10k+ parts

-

561

$21.530

-

-

-

Kulean Microsystems

USA . 7,792 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,792

-

-

-

-

Problanco Electronics

Mexico . 2,603 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,603

-

-

-

-

SupplyDigital Components

Austria . 2,132 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,132

-

-

-

-

Corphita

USA . 1,968 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,968

-

-

-

-

TANS Electronics

Latvia . 1,488 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,488

-

-

-

-

UHIMA Technologies

Türkiye . 884 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

884

-

-

-

-

Corohmni

South Africa . 89 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

89

-

-

-

-

Overview

Unleash the power of cutting-edge imaging technology with the MT9V011P11STC-B-DR by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees superior quality and reliability in their image sensors. Ideal for a wide range of applications, this product offers unparalleled value and benefits to customers. Capture stunning visuals with ease and efficiency, thanks to the advanced features and advantages that this sensor provides. Experience the difference with Onsemi's MT9V011P11STC-B-DR image sensor.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

Larger pixel size allows for better light absorption, resulting in higher image quality and clarity.

Maximum Supply Voltage: 3.05 V

Higher maximum supply voltage ensures stable and reliable operation.

Master Clock: 27 MHz

High master clock frequency enables fast data processing and efficient performance.

Body Width: 11.43 inch

Compact body width makes it suitable for various applications with space constraints.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology offers low power consumption and high sensitivity, making it ideal for portable devices.

Dynamic Range: 60 dB

Wide dynamic range ensures accurate capture of both dark and bright areas in the image.

Output Interface Type: 2-WIRE INTERFACE

2-Wire interface simplifies connectivity and communication with other devices.

Frame Rate: 30 fps

High frame rate enables smooth and real-time video capture.

Technical Specifications

Image Sensors MT9V011P11STC-B-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

4.05 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

60 dB

Frame Rate:

30 fps

Horizontal Pixel:

640

Housing:

PLASTIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

8 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-20 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.60X5.60

Sensors or Transducers Type:

Maximum Supply Voltage:

3.05 V

Minimum Supply Voltage:

2.55 V

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20