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MT9M131C12STC-DP

Onsemi

MT9M131C12STC-DP by Onsemi

Onsemi's MT9M131C12STC-DP is a 1/3 inch CMOS image sensor with 1280x1024 pixels, offering a dynamic range of 71 dB. It operates at a max clock speed of 54 MHz and has an output range of 0.30-2.50V. Ideal for applications requiring high-resolution imaging and digital voltage output in a compact square package.

Median Price

$15.964

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 245 parts In-Stock

1+ parts

-

100+ parts

$14.190

1k+ parts

$12.700

10k+ parts

$11.950

245

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$14.190

$12.700

$11.950

Verical

USA . 136 parts In-Stock

1+ parts

-

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$17.738

1k+ parts

$15.875

10k+ parts

$14.938

136

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$17.738

$15.875

$14.938

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 954 parts In-Stock

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$15.010

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954

$15.010

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Vyrian

USA . 6,999 parts In-Stock

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6,999

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Flip Electronics

USA . 346 parts In-Stock

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ComSIT Distribution GmbH

Germany . 77 parts In-Stock

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AZTECH Wire

Italy . 1,135 parts In-Stock

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$8.010

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$8.010

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Corphita

USA . 430 parts In-Stock

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$14.220

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$14.220

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Corohmni

South Africa . 373 parts In-Stock

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$15.800

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373

$15.800

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TANS Electronics

Latvia . 7,769 parts In-Stock

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Problanco Electronics

Mexico . 6,998 parts In-Stock

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SupplyDigital Components

Austria . 4,369 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Kulean Microsystems

USA . 818 parts In-Stock

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UHIMA Technologies

Türkiye . 386 parts In-Stock

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386

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Overview

Capture every moment with the MT9M131C12STC-DP Image Sensor by Onsemi. With a cutting-edge CMOS sensor and advanced digital voltage output, this square-shaped sensor delivers crystal-clear images with a dynamic range of 71 dB. Perfect for applications in automotive, security, and industrial imaging, this sensor offers unparalleled quality and performance. Trust Onsemi's reputation for excellence and unlock endless possibilities with the MT9M131C12STC-DP.

Feature Benefit Bullets

Pixel Size (um): 3.6X3.6

Smaller pixel size allows for higher resolution images to be captured, resulting in more detailed and crisp images.

Maximum Supply Voltage: 3.1 V

Higher maximum supply voltage ensures stable performance and reliability of the image sensor.

Master Clock: 54 MHz

High master clock frequency enables faster data processing and image capture speed.

Body Width: 11.43 inch

Compact body width makes it suitable for various applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption and high sensitivity, making them ideal for imaging applications.

Body Height: 2.3 mm

Low body height allows for easy integration into different devices and systems.

Package Shape or Style: SQUARE

Square package shape provides a stable and easy mounting option for the image sensor.

Minimum Supply Voltage: 2.5 V

Low minimum supply voltage ensures energy efficiency and compatibility with various power sources.

Maximum Operating Temperature: 70 °C

High maximum operating temperature range allows for reliable performance in various environmental conditions.

Horizontal Pixel: 1280

High horizontal pixel count enables capturing wide and detailed images.

Output Range: 0.30-2.50V

Wide output voltage range provides flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies interface with other digital systems for data transfer and processing.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures reliable performance even in harsh environmental conditions.

Housing: CERAMIC

Ceramic housing offers durability and thermal stability for long-term use.

Dynamic Range: 71 dB

High dynamic range allows for capturing both bright and dark areas in a scene with detail and clarity.

Vertical Pixel: 1024

High vertical pixel count enhances the image sensor's ability to capture detailed images with depth and clarity.

Body Length/Diameter: 11.43 mm

Compact body length/diameter makes it suitable for various compact devices without compromising performance.

Optical Format (inch): 1/3

1/3 inch optical format provides a good balance between image quality and sensor size for various applications.

Data Rate: 27 Mbps

High data rate allows for fast and efficient data transfer for real-time image processing and analysis.

Termination Type: SOLDER

Solder termination ensures secure and reliable connection of the image sensor to the circuit board.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with other devices and systems.

Frame Rate: 15 fps

Decent frame rate allows for smooth video capture and playback without motion blur.

Array Type: FRAME

Frame array type offers efficient pixel arrangement for capturing high-quality images with accurate color reproduction.

Mounting Feature: SURFACE MOUNT

Surface mounting feature enables easy and secure attachment of the image sensor to the PCB for streamlined assembly process.

Technical Specifications

Image Sensors MT9M131C12STC-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.50-3.10 V ANALOG SUPPLY VOLATGE

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Data Rate:

27 Mbps

Dynamic Range:

71 dB

Frame Rate:

15 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

54 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.6X3.6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.1 V

Minimum Supply Voltage:

2.5 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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